• Title/Summary/Keyword: Silicon Carbide

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Removal of Cd(II) from water using carbon, boron nitride and silicon carbide nanotubes

  • Azamat, Jafar;Hazizadeh, Behzad
    • Membrane and Water Treatment
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    • v.9 no.1
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    • pp.63-68
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    • 2018
  • Molecular dynamics simulations were used to study the removal of Cd(II) as a heavy metal from wastewater using armchair carbon nanotube, boron nitride nanotube and silicon carbide nanotubes under applied electric field. The system contains an aqueous solution of $CdCl_2$ as a heavy metal and a (7,7) nanotube as a nanostructured membrane, embedded in a silicon nitride membrane. An external electric field was applied to the considered system for the removal of $Cd^{2+}$ through nanotubes. The simulation results show that in the same conditions, considered armchair nanotubes were capable to remove $Cd^{2+}$ from wastewater with different ratios. Our results reveal that the removal of heavy metals ions through armchair carbon, boron nitride and silicon carbide nanotubes was attributed to the applied electric field. The selective removal phenomenon is explained with the calculation of potential of mean force. Therefore, the investigated systems can be recommended as a model for the water treatment.

Freeze Casting of Aqueous Alumina/Silicon Carbide Slurries and Fabrication of Layered Composites: (I) Dispersion and Rheology of Slurries (수성 알루미나/탄화규소 슬러리의 동결주조와 층상복합체의 제조: (I) 슬러리의 분산과 유동성)

  • Yang, Tae-Young;Cho, Yong-Ki;Kim, Young-Woo;Yoon, Seog-Young;Park, Hong-Chae
    • Journal of the Korean Ceramic Society
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    • v.45 no.2
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    • pp.99-104
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    • 2008
  • Zeta potential, sedimentation bulk density and rheology in the dispersion system have been studied in terms of solid loading (40-55 vol%), and types of additives. Ammonium polymethacrylate, glycerol, ethoxylated acetylenic diol, and polyvinyl alcohol have been used as the dispersant, cryo-protectant, surfactant, and binder, respectively. Sedimentation density greatly increased upon adding dispersant; the effect was more pronounced with ionic alumina suspension compared with covalent silicon carbide. With further addition of cryo-protectant and surfactant to dispersant, the sedimentation density increased somewhat. The suspension viscosity generally behaviored in an opposite manner to the sedimentation density, i.e., high sedimentation gave low high-shear viscosity, indicative of low order structure formation in the suspended particles. Shear rate rheology in shear rate of $2-300\;sec^{-1}$ showed a shear thinning and its onset began at similar shear rate (${\sim}100\;sce^{-1}$), regardless of solid loading.

Effect of Template Content on Microstructure and Flexural Strength of Porous Mullite-Bonded Silicon Carbide Ceramics (기공형성제 함량이 다공질 Mullite-Bonded SiC 세라믹스의 미세구조와 강도에 미치는 영향)

  • Choi, Young-Hoon;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.509-514
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    • 2010
  • Porous mullite-bonded SiC (MBSC) ceramics were fabricated at temperatures ranging from 1400 to $1500^{\circ}C$ for 2 h using silicon carbide (SiC), alumina ($Al_2O_3$), strontium oxide (SrO), and poly (methyl methacrylate-coethylene glycol dimethacrylate) (PMMA) microbeads. The effect of template content on porosity, pore morphology, and flexural strength were investigated. The porosity increased with increasing the template content at the same sintering temperature. The flexural strength showed maximum after sintering at $1450^{\circ}C$/2 h for all specimens due to small pores and dense strut. By controlling the template content and sintering temperature, it was possible to produce porous MBSC ceramics with porosities ranging from 30% to 54%. A maximum flexural strength of ~51MPa was obtained at 30% porosity when no template were used and specimens sintered at $1450^{\circ}C$/2 h.

Preparation of Silicon Carbide Ceramic Thick Films by Liquid Process (액상공정을 이용한 탄화규소 세라믹 후막의 제조)

  • Kim, Haeng-Man;Kim, Jun-Su;Lee, Hong-Rim;Ahn, Young-Cheol;Yun, Jon-Do
    • Journal of the Korean Ceramic Society
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    • v.49 no.1
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    • pp.95-99
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    • 2012
  • Silicon carbide ceramics are used for oxidation resistive coating films due to their excellent properties like high strength, good oxidation resistance, and good abrasion resistance, but they have poor formability and are prepared by vapor process which is complicated, costly, and sometimes hazardous. In this study, preparation of silicon carbide coating film by liquid process using polymer precursor was attempted. Coating film was prepared by dip coating on substrate followed by heat treatment in argon at $1200^{\circ}C$. By changing the dipping speed, the thickness was controlled. The effects of plasticizer, binder, or fiber addition on suppression of crack generation in the polymer and ceramic films were examined. It was found that fiber additives was effective for suppressing crack generation.

Research on Ultra-precision Grinding Work of Silicon Carbide (실리콘 카바이드의 초정밀 연삭 가공에 관한 연구)

  • Park, Soon-Sub;Won, Jong-Ho
    • Journal of the Korean Society for Precision Engineering
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    • v.26 no.9
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    • pp.58-63
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    • 2009
  • Silicon carbide (SiC) has been used for many engineering applications because of their high strength at high temperatures and high resistances to chemical degradation. SiC is very useful especially for a glass lens mold whose components demanded to the machining with good surface finish and low surface damage. The performance and reliability of optical components are strongly influenced by the surface damage of SiC during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified SiC glass lens mold. Usually the major form of damage in grinding of SiC is a crack occurs at surface and subsurface. The energy introduced in the layers close to the surface leads to the formation of these cracks. The experimental studies have been carried out to get optimum conditions for grinding of silicon carbide. To get the required qualified surface finish in grinding of SiC, the selection of type of the wheel is also important. Grinding processes of sintered SiC work-pieces is carried out with varying wheel type, depth of cut and feed using diamond wheel. The machining result of the surface roughness and the number of flaws, have been analyzed by use of surface profilers and SEM.

Application of nanocomposite material to avoid injury by physical sports equipment

  • Weifeng Qin;Zhubo Xu
    • Advances in nano research
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    • v.14 no.2
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    • pp.195-200
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    • 2023
  • Safety in sports is important because if an athlete has an accident, he may not be able to lead an everyday life for the rest of his life. The safety of sports facilities is very effective in creating people's sports activities, with the benefits of staying away from physical injury, enjoying sports, and mental peace. Everyone has the right to participate in sports and recreation and to ensure that they want a safe environment. This study prepares a very good Nickel-Cobalt -Silicon carbide (Ni/Co-SiC) nanocomposite with convenient geometry on the leg press machine rod, employing the pulse electrodeposition technique to reduce the rod's wear and increase the durability of sports equipment and control sports damages. The results showed that the Ni/Co-SiC nanocomposite formed at 2 A/dm2 shows extraordinary microhardness. The wear speed for the Ni/Co-SiC nanocomposite created at 4 A/dm2 was 15 mg/min, showing superior wear resistance. Therefore, the Ni/Co-SiC nanocomposite can reduce sports equipment's wear and decrease sports injuries. Ni-Co/SiC nanocomposite layers with various scopes of silicon carbide nanoparticles via electrodeposition in a Ni-Co plating bath, including SiC nanoparticles to be co-deposited. The form and dimensions of Silicon carbide nanoparticles are watched and selected using Scanning Electron Microscopy (SEM).

Improvement in Thermomechanical Reliability of Power Conversion Modules Using SiC Power Semiconductors: A Comparison of SiC and Si via FEM Simulation

  • Kim, Cheolgyu;Oh, Chulmin;Choi, Yunhwa;Jang, Kyung-Oun;Kim, Taek-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.21-30
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    • 2018
  • Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

Improvement of uniformity in chemical vapor deposition of silicon carbide using CFD (탄화규소 화학기상증착 공정에서 CFD를 이용한 균일도 향상 연구)

  • Seo, Jin-Won;Kim, Jun-Woo;Hahn, Yoon-Soo;Choi, Kyoon;Lee, Jong-Heun
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.6
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    • pp.242-245
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    • 2014
  • In order to increase the thickness uniformity in chemical vapor depositon of silicon carbide, we have carried out CFD studies for a CVD apparatus having a horizontally-rotated 3-stage susceptor. We deposited silicon carbide films of 3C-SiC phase showing quite uniform thickness between stages but not uniform one in the stage. The cause of this nonuniformity is thought to be originated from the high rotational speed. And the uniformity between stages can be further increased with the $120^{\circ}$ split type nozzles from CFD results. Through the formation of silicon carbide film on graphite substrates we can make oxidation-resistant and dust-free graphite components with high hardness for the semiconductor applications.

A Study on Properties of SiC material Fabricated by Liquid Phase Sintering (액상소결법에 의해 제조된 탄화규소 재료의 특성에 대한 연구)

  • Sang-Pill Lee;Jae-Hwan Kwak;Jin-Kyung Lee
    • Journal of the Korean Society of Industry Convergence
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    • v.26 no.6_2
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    • pp.1019-1024
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    • 2023
  • Ceramic materials have excellent material properties such as stability at high temperatures, chemical stability, corrosion resistance, and wear resistance, so they are applicable even in extreme environments of high temperature and pressure. In particular, silicon carbide can be applied in the field of structural ceramics due to its characteristics of high strength, hardness, corrosion resistance, and heat resistance even at high temperatures. In this study, considering the application of silicon carbide materials to next-generation turbines, silicon carbide materials were manufactured using a liquid phase sintering method. When manufacturing liquid phase sintered silicon carbide, sintering additives were added to lower the sintering temperature and densify the material. In Al2O3-SiO2, it was confirmed that the secondary product of the sintering additive was observed as a slightly dark area and was evenly distributed overall, and the fracture surface of Al2O3-SiO2 was in the form of transgranular fracture in which cracks progressed along the crystal plane, and the flexural strength for Al2O3-SiO2 was about 445.6 MPa.

Micro flow sensor using polycrystalline silicon carbide (다결정 실리콘 카바이드를 이용한 마이크로 유량센서)

  • Lee, Ji-Gong;Lei, Man I;Lee, Sung-Pil;Rajgopal, Srihari;Mehregany, Mehran
    • Journal of Sensor Science and Technology
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    • v.18 no.2
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    • pp.147-153
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    • 2009
  • A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.