• Applied Microscopy
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• v.44 no.4
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• pp.123-132
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• 2014

Silicene is one of the most interesting two-dimensional materials, because of not only the extraordinary properties similar to graphene, but also easy compatibility with existing silicon-based devices. However, non-existing graphitic-like structure on silicon and unstable free-standing silicene structure leads to difficulty in commercialization of this material. Therefore, substrates are essential for silicene, which affects various properties of silicene and supporting unstable structure. For maintaining outstanding properties of silicene, van der Waals bonding between silicene and substrate is essential because strong interaction, such as silicene with metal, breaks the band structure of silicene. Therefore, we review the stability of silicene on other two-dimensional materials for van der Waals bonding. In addition, the properties of silicene are reviewed for silicene-based heterostructure.

• Advances in nano research
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• v.9 no.2
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• pp.105-112
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• 2020

Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It is predicted to be compatible with the present fabrication technology. However, its gapless properties (neglecting the spin-orbiting effect) hinders its application as digital switching devices. Thus, a suitable band gap engineering technique is required. In the present work, the band structure and density of states of uniformly doped silicene are obtained using the nearest neighbour tight-binding (NNTB) model. The results show that uniform substitutional doping using aluminium (Al) has successfully induced band gap in silicene. The band structures of the presented model are in good agreement with published results in terms of the valence band and conduction band. The band gap values extracted from the presented models are 0.39 eV and 0.78 eV for uniformly doped silicene with Al at the doping concentration of 12.5% and 25% respectively. The results show that the engineered band gap values are within the range for electronic switching applications. The conclusions of this study envisage that the uniformly doped silicene with Al can be further explored and applied in the future nanoelectronic devices.

• Advances in nano research
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• v.10 no.5
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• pp.415-422
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• 2021

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor that might be compatible with present silicon fabrication technology. Similar to graphene, silicene exhibits the honeycomb lattice structure. Consequently, silicene is a semimetallic material, preventing its application as a field-effect transistor. Therefore, this work proposes the uniform doping bandgap engineering technique to obtain the n-type silicene nanosheet. By applying nearest neighbour tight-binding approach and parabolic band assumption, the analytical modelling equations for band structure, density of states, electrons and holes concentrations, intrinsic electrons velocity, and ideal ballistic current transport characteristics are computed. All simulations are done by using MATLAB. The results show that a bandgap of 0.66 eV has been induced in uniformly doped silicene with phosphorus (PSi₃NW) in the zigzag direction. Moreover, the relationships between intrinsic velocity to different temperatures and carrier concentration are further studied in this paper. The results show that the ballistic carrier velocity of PSi₃NW is independent on temperature within the degenerate regime. In addition, an ideal room temperature subthreshold swing of 60 mV/dec is extracted from ballistic current-voltage transfer characteristics. In conclusion, the PSi₃NW is a potential nanomaterial for future electronics applications, particularly in the digital switching applications.

• Advances in nano research
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• v.10 no.1
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• pp.91-99
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• 2021

Silicene is an emerging two-dimensional (2D) semiconductor material which has been envisaged to be compatible with conventional silicon technology. This paper presents a theoretical study of uniformly doped silicene with aluminium (AlSi3) Field-Effect Transistor (FET) along with the benchmark of device performance metrics with other 2D materials. The simulations are carried out by employing nearest neighbour tight-binding approach and top-of-the-barrier ballistic nanotransistor model. Further investigations on the effects of the operating temperature and oxide thickness to the device performance metrics of AlSi3 FET are also discussed. The simulation results demonstrate that the proposed AlSi3 FET can achieve on-to-off current ratio up to the order of seven and subthreshold swing of 67.6 mV/dec within the ballistic performance limit at room temperature. The simulation results of AlSi3 FET are benchmarked with FETs based on other competitive 2D materials such as silicene, graphene, phosphorene and molybdenum disulphide.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.396-399
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• 2015

제일원리계산을 기반으로 실리센을 보호하는 h-BN의 효과에 대해 연구하였다. h-BN의 화학적 안정성으로 인하여, 실리센에 대한 기판과 불순물의 영향을 차단하여 자유지지 실리센의 성질을 유지하는 것을 보였다. 부분적으로 수소처리된 실리센 역시 h-BN 단일층 내에서 안정적으로 고유의 성질을 나타내는 것을 보였다.

• Proceeding of EDISON Challenge
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• 2014.03a
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• pp.514-515
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• 2014

실리신의 single vacancy에 Sc부터 Zn까지 전이금속을 넣고 이에 따른 실리신의 자기 모멘트와 구조 변화를 density funtional theory(DFT) 계산을 통해 알아보았다. 실리신은 그래핀(Graphene)과는 다소 다른 경향을 보였으며, 이는 실리신의 buckled 구조와 결합 길이의 차이로 인한 것으로 생각된다. 자기 모멘트는 전이금속 impurity에 큰 영향을 받았다.