• 제목/요약/키워드: Silica-on-silicon

검색결과 127건 처리시간 0.027초

Ethyl Silicate로부터 Silicon Nitride의 합성(II) : 실화반응에서 첨가제의 영향 (Synthesis of Silicon Nitride from Ethyl Silicate(II) : Effect of Additive on the Nitridation of Silicon Nitride)

  • 오일환;박금철
    • 한국세라믹학회지
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    • 제25권5호
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    • pp.561-569
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    • 1988
  • Mixtures of very small amounts of additive, carbon and silica(about 0.46${\mu}{\textrm}{m}$) which synthesized by the hydrolysis of ethyl silicate, the molar ratio of SiO2/C was fixed to 1/10, was nitrided at 145$0^{\circ}C$. It was considered that the optimum amount of additive to promote the nitridation reaction was below 2.0wt%. By the addition of additive, the nitridation reaction was promoted and formation of $\beta$-Si3N4 was promoted at 145$0^{\circ}C$ for 1hour, but, the nitridation reaction was decreased and the ratio of $\alpha$/$\beta$ of Si3N4, was increased at 145$0^{\circ}C$ for 5 hours. The crystal phase was $\alpha$ phase and the nitridation reaction was promoted and the particle size of silicon nitride was become smaller by the addition of $\alpha$-Si3N4, but silicon nitride of whisker-like form was produced by the addition of transition elements. There was a difference in the lattice constants of $\alpha$-Si3N4, but no difference in its of $\beta$-Si3N4 according to kinds of added substance and reaction time.

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입자 영상 처리 시스템을 이용한 콜로이드 입자의 제타포텐셜 측정 및 나노유체 분산 특성 연구 (A Study on the Zeta Potential Measurement and the Stability Analysis of Nano Fluids using a Particle Image Processing System)

  • 이재근;김성찬;김희중;이창건;주찬홍;이래철
    • 한국분무공학회지
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    • 제8권1호
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    • pp.16-22
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    • 2003
  • Zeta potential measurements of colloid particles suspended in a liquid are performed by a Zeta Meter developed. There are many applications of colloid stability in spray technology, paints, wastewater treatment, and pharmaceuticalse. Zeta potentials of charged particles are obtained by measuring the electrophoretic velocities of the particles using video enhanced microscopy and image analysis program. The values of zeta potential of polystyrene latex(PSL), $silica(SiO_2)$M, polyvinylidence difluoride(PVDF), silicon nitride, and alumina particles in deionized (DI) water were measured to be -40.5, -31.9, -25.2, -15.1 and -10.1mV, respectively. The particles having high zeta potential less than -20 mV are stable in DI water, because the double layers of them have strong repulsive forces mutually, and the particles having low zeta potential over -20mV are unstable due to Van Der Waals forces. Silica(>20nm), PSL, aluminum and PVDF particles were found to be stable that would remain separate and well disperse, while silicon nitride and alumina particles were found to be unstable that would gradually agglomerate in DI water.

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Novel Fabrication of Designed Silica Structures Inspired by Silicatein-a

  • Park, Ji-Hun;Kwon, Sun-Bum;Lee, Hee-Seung;Choi, In-Sung S.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.557-557
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    • 2012
  • Silicatein-${\alpha}$, the enzyme extracted from silica spicules in glass sponges, has been studied extensively in the way of chemistry from 1999, in which the pioneering work by Morse, D. E. - the discovery of the enzymatic hydrolysis in Silicatein-${\alpha}$ - was published. Since its reaction conditions are physiologically favored, synthesis of various materials, such as gallium oxide, zirconium oxide, and silicon oxide, was achieved without any hazardous wastes. Although some groups synthesized oxide films and particles, they have not achieved yet controlled morphogenesis in the reaction conditions mentioned above. With the knowledge of catalytic triad involved in hydrolysis of silicone alkoxide and oligomerization of silicic acid, we designed the novel peptide amphiphiles to not only form self-assembled structure, but also display similar activities to silicatein-${\alpha}$. Designed templates were able to self-assemble into left-handed helices for the peptide amphiphiles with L-form amino acid, catalyzing polycondensation of silicic acids onto the surface of them. It led to the formation of silica helices with 30-50 nm diameters. These results were characterized by various techniques, including SEM, TEM, and STEM. Given the situation that nano-bio-technology, the bio-applicable technology in nanometer scale, has been attracting considerable attention; this result could be applied to the latest applications in biotechnology, such as biosensors, lab-on-a-chip, biocompatible nanodevices.

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나노임프린트 리소그래피를 이용한 곡면 기판 위에 정렬된 나노 볼 패턴 형성에 관한 연구 (Fabrication of High Ordered Nano-sphere Array on Curved Substrate by Nanoimprint Lithography)

  • 홍성훈;배병주;곽신웅;이헌
    • 한국표면공학회지
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    • 제41권6호
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    • pp.331-334
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    • 2008
  • The replica of highly ordered nano-sphere array patterns were fabricated using hot embossing method. First, silica nano-sphere array on Si substrate was transferred to PVC film at $130^{\circ}C$ and 7 bar using hot embossing process. Then, silica nano-sphere array on PVC template was removed by soaking the PVC film in buffered oxide etcher. In order to form anti-stiction layer, the PVC template was coated with silicon dioxide layer and self-assembled monolayer. Through UV nanoimprint lithography with the fabricated flexible PVC template, highly ordered nano-sphere array pattern was imprinted on curved substrates with high fidelity.

화학적 기상 반응에 의한 탄화규소 피복 흑연의 시뮬레이션(Ⅰ) (Simulation of Silicon Carbide Converted Graphite by Chemical Vapor Reaction (Ⅰ))

  • 이준성;최성철
    • 한국세라믹학회지
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    • 제38권9호
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    • pp.846-852
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    • 2001
  • 2차원적 몬테 칼로 시뮬레이션을 사용하여, 화학적 기상 반응법에 의한 탄화규소 전환층의 생성에 미치는 온도의 영향을 조사하였다. 화학적 기상 반응법은 실리카의 열탄화 환원법에 근거하며, 흑연 기판의 탄소와 실리카 반응기체와의 화학적 반응에 의하여 탄화규소 전환층을 형성하는 방법이다. 탄화규소는 반응기체의 확산 및 반응과 같은 열적활성화 과정을 통하여 생성되기 때문에 탄화규소 전환층의 형성은 온도에 크게 의존함을 알 수 있다. 본 연구에서는 몬테 칼로법을 사용하여 삼각격자로 배열된 2차원적인 계에서 흑연 기판의 미세 기공을 따라 확산된 반응기체와 탄소와의 반응에 의해서 탄화규소가 형성되는 과정을 시뮬레이션을 행하였다. 반응 온도를 1900K, 2000K, 2100K, 2200K로 조건을 달리하여 시뮬레이션 하였으며, 그 계산 결과를 실험 결과와 비교하여 재현성을 검토하고 탄화규소 전환층의 두께와 화학적 조성 구배에 대한 반응 온도의 영향을 검증하기 위한 것이다.

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알루미늄 기판 상의 Ni layer가 a-Si의 AIC(Aluminum Induced Crystallization)에 미치는 영향 (Effects of Ni layer as a diffusion barrier on the aluminum-induced crystallization of the amorphous silicon on the aluminum substrate)

  • 윤원태;김영관
    • 한국결정성장학회지
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    • 제22권2호
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    • pp.65-72
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    • 2012
  • 본 연구에서는 비정질 실리콘의 알루미늄 유도 결정화(AIC)가 시도되었다. 결정질 실리콘의 좀 더 큰 입자를 얻기 위해, 선택적인 핵생성(Selective nucleation) 시도는 비정질 실리콘 밑의 실리카($SiO_2$) 층의 습식 파우더 분사 처리와 함께 진행됐다. 또한 니켈 층은 실리콘 원자가 알루미늄 층으로 이동하는 것을 방지하기 위한 확산 방지막(Diffusion barrier)으로 선택되었다. $520^{\circ}C$에서 열처리를 한 후에 XRD 분석을 통해 Si(111) 방향으로 결정화된 결정질 실리콘을 확인했고 니켈은 실리콘과 알루미늄 사이의 확산 방지막으로 매우 효과적인 재료라는 것을 입증하였다. 이 연구는 고성능의 태양전지에 적용하는 결정질 실리콘 막의 좀 더 큰 입자를 얻기 위한 방법 중의 하나라고 기대된다.

입계상 조성이 탄화규소의 미세구조와 기계적 특성에 미치는 영향 (Effect of Grain Boundary Composition on Microstructure and Mechanical Properties of Silicon Carbide)

  • 김재연;김영욱;이준근
    • 한국세라믹학회지
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    • 제35권9호
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    • pp.911-916
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    • 1998
  • By using {{{{ { { {Y }_{3 }Al }_{5 }O }_{12 } }} (YAG) and SiO2 as sintering additives the effect of the composition of sintering ad-ditives on microstructure and mechanical properties of the hog-pressed and subsequently annealed SiC ma-terials were investigated. Microstructures of sintered and annealed materials were strongly dependent onthe composition of sintering additives. The average diameter and volume fraction of elongated grains in an-nealed materials increased with the SiO2/YAg ratio while the fracture toughness increased with the SiO2/YAg ratio. The average MPa.{{{{ { m}^{1/2 } }} respectively. Typical strength and fracture toughness of an annealed material with SiO2/YAg ra-tionof 0.67 were 371 MPa and 5.6 MPa.{{{{ { m}^{1/2 } }} respectively.

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Recent Trend of Ultra-Pure Water Producing Equipment

  • Motomura, Yoshito
    • 한국막학회:학술대회논문집
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    • 한국막학회 1996년도 제4회 하계분리막 Workshop (초순수 제조와 막분리 공정)
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    • pp.121-147
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    • 1996
  • Since 1980, the water quality of ultra-pure water has been rapidly improved, and presently ultra-pore water producing equipment for 64Mbit is in operation. Table 1 shows the degree of integration of DRM and required water quality exlmple. The requirements of the ultra-pure water for 64Mbit are resistivity: 18.2 MQ/cm or higher, number of particulates: 1 pc/ml or less (0.05 $\mu$m or larger). bacteria count: 0.1 pc/l or less. TOC (Total Organic Carbon, index of organic snbstance) : 1ppb or less, dissolved oxygen: 5ppb or less, silica: 0.5ppb or less, heavy metal ions: 5ppb or less. The effect of metals on the silicon wafer has been well known, and recently it has been reported that the existence of organic substance in ultra-pure water is closely related to the device defect, drawing attention. It is reported that if organic substance sticks to the natural oxidation film, the oxide film remaims on the organic substance attachment in the hydrofluoric acid treatment (removal of natural oxidation film). The organic substance forms film on the silicon wafer, and harmful elements such as metals and N.P.S., components contained in the organic substance and the bad effect due to the generatinn of silicon carbide cannot be forgotten. In order to remove various impurities in raw water, many technological develoments (membrane, ion exchange, TOC removal, piping material, microanalysis, etc.) have been made with ultra-pure water producing equipment and put to practical use. In this paper, technologies put to practical use in recent ultra-pure vater producing equimeut are introduced.

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용융 알루미늄에 의한 점토결합 카올린 샤모트의 침식에 관한 연구 (A Study on Corrosion Behavior of the Clay-Bonded Kaolin Chamotte by Molten Aluminum)

  • 박정현;이승주
    • 한국세라믹학회지
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    • 제17권4호
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    • pp.188-196
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    • 1980
  • To investigate the corrosion behavior of the clay-bonded kaolin chamotte by molten aluminum, the mixture of 20 wt% fire clay and 80 wt% kaolin chamotte was prepared and fired in the temperature range 900~120$0^{\circ}C$. The specimens fired at each temperature were reacted with molten aluminum at 90$0^{\circ}C$. The results obtained in this experiment are as followed. 1) It was confirmed through X-ray diffraction analysis that the clay-bonded kaolin chamotte exposed to molten aluminum suffered penetration by the reaction of aluminum with silica forming alumina and metallic silicon. 2) Penetration was independent whether the silica existed as free or one component of mullite. 3) Penetration of the specimen fired at 90$0^{\circ}C$ was negligible while the others fired above 100$0^{\circ}C$ showed remarkable penetration. 4) Penetration rate at 90$0^{\circ}C$ was parabolically increased with the holding time as in the case of metal oxidation.

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Advances in Zinc Oxide-Based Devices for Active Matrix Displays

  • Mann, Mark;Li, Flora;Kiani, Ahmed;Paul, Debjani;Flewitt, Andrew;Milne, William;Dutson, James;Wakeham, Steve J.;Thwaites, Mike
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.389-392
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    • 2009
  • Metal oxides have been proposed as an alternative channel material to hydrogenated amorphous silicon in thin film transistors (TFTs) because their higher mobility and stability make them suitable for transistor active layers. Thin films of indium zinc oxide (IZO) were deposited using a High Target Utilization Sputtering (HiTUS) system on various dielectrics, some of which were also deposited with the HiTUS. Investigations into bottom-gated IZO TFTs have found mobilities of 8 $cm^2V\;^1s^{-1}$ and switching ratios of $10^6$. There is a variation in the threshold voltage dependent on both oxygen concentration, and dielectric choice. Silica, alumina and silicon nitride produced stable TFTs, whilst hafnia was found to break down as a result of the IZO.

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