• Journal of the Korean Society for Precision Engineering
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• v.18 no.9
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• pp.82-88
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• 2001

In order to fulfil the requirements of the various performance profiles of ceramic cutting tools, six different SiC-based ceramics have been fabricated by hot-pressing (SiC--${Si}_3 {N}_4$composites) or by hot-pressing and subsequent annealing (monolithic SiC and SiC-TiC composites). Correlation between the annealing time and the corresponding microstructure and the mechanical properties of resulting ceramics have been investigated. The grain size of both ${Si}_3 {N}_4$and SiC in SiC-${Si}_3 {N}_4$composites increased with the annealing time. Monolithic SiC has the highest hardness, SiC-TiC composite the highest toughness, and the SiC-${Si}_3 {N}_4$composite the highest strength among the ceramics investigated. The hardness of SiC-${Si}_3 {N}_4$composites was relatively independent of the grain size, but dependent on the sintered density. The cutting performance of the newly developed SiC-based ceramic cutting tools will be described in Part 2 of this paper.

• Korean Journal of Materials Research
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• v.7 no.2
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• pp.145-151
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• 1997

Remelting of $A-Si/SiC_{p}$ composites followed by isothermal holding and solidification, leads ro the settling of Sic particles to the bottom of the mold. With the isothermal holding time for molten $A-Si/SiC_{p}$ composites. the particle free zone increases rapidly up to approximately first 30 minutes of the holding time. Experimental resulls of the particle settling confirm that the larger SIC particles sink faster tlun the sniiller particles. An increase in volume fraction of Sic particles decreases the setrling velocity of the particles.

• Korean Journal of Metals and Materials
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• v.50 no.8
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• pp.569-573
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• 2012

In order to understand the difference in SiC deposition between the $CH_3SiCl_3-H_2$ and $C_3H_8-SiCl_4-H_2$ systems, we calculate the phase stability among ${\beta}$-SiC, graphite and silicon. We constructed the phase-diagram of ${\beta}$-SiC over graphite and silicon via computational thermodynamic calculation considering pressure (P), temperature (T) and gas composition (C) as variables. Both P-T-C diagrams showed a very steep phase boundary between the SiC+C and SiC region perpendicular to the H/Si axis, and also showed an SiC+Si region with a H/Si value of up to 6700 in the $C_3H_8-SiCl_4-H_2$, and 5000 in the $CH_3SiCl_3-H_2$ system. This difference in phase boundaries is explained by the ratio of Cl to Si, which is 4 for the $C_3H_8-SiCl_4-H_2$ system and 3 for the $C_3H_8-SiCl_4-H_2$ system. Because the C/Si ratio is fixed at 1 in the $CH_3SiCl_3-H_2$ system while it can be variable in the $C_3H_8-SiCl_4-H_2$ system, the functionally graded material is applicable for better mechanical bonding during SiC coating on graphite substrate in the $C_3H_8-SiCl_4-H_2$ system.

• Resources Recycling
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• v.19 no.4
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• pp.51-57
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• 2010

As a recycling of Si sludge from Si wafer process, a Si-SiC-CuO-C composite material was synthesized and investigated as an anode material for lithium batteries. The Si sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by organic washing, magnetic separation, and acid washing. The Si-SiC-CuO-C composite from the recovered Si-SiC mixture was prepared by high-energy mechanical milling. According to the electrochemical tests such as charge-discharge capacity and cycling behavior, it showed the improved cycle performance. The SiC and CuO-related phases were presumed to restrain the volume expansion of the anode and Fe, however, should be removed below 10 ppm prior to synthesis of the composite because it caused the capacity loss of the active material itself.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.402-409
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• 2013

The objective of this study was to develop a synthesis process for ${\beta}$-SiC powders to reduce the synthesis temperature and to control the particle size and to prevent particle agglomeration of the synthesized ${\beta}$-SiC powders. A phenol resin and TEOS were used as the starting materials for the carbon and Si sources, respectively. $SiO_2$-C hybrid precursors with various C/Si mole ratios were fabricated using a conventional sol-gel process. ${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C hybrid precursors with various C/Si mole ratios (1.6 ~ 2.5) fabricated using a sol-gel process. In this study, the effects of excess carbon and the addition of Si powders to the $SiO_2$-C hybrid precursor on the synthesis temperature and particle size of ${\beta}$-SiC were examined. It was found that the addition of metallic Si powders to the $SiO_2$/C hybrid precursor with excess carbon reduced the synthesis temperature of the ${\beta}$-SiC powders to as low as $1300^{\circ}C$. The synthesis temperature for ${\beta}$-SiC appeared to be reduced with an increase of the C/Si mole ratio in the $SiO_2$-C hybrid precursor by a direct carburization reaction between Si and excess carbon.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.158-161
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• 2006

SiC materials have been extensively studied for high temperature components in advanced energy conversion system and advanced gas turbine. However, the brittle characteristics of SiC such as law fracture toughness and law strain-to fracture impose a severe limitation on the practical applications of SiC materials. SiC/SiC composites can be considered as a promising candidate in various structural materials, because of their good fracture toughness. In this composite system, the direction of SiC fiber will give an effect to the mechanical properties. It is therefore important to control a properdirection of SiC fiber for the fabrication of high performance SiC/SiC composites. In this study, unidirection and two dimension woven structures of SiC/SiC composites were prepared starting from Tyranno SA fiber. SiC matrix was obtained by nano-powder infiltration and transient eutectoid (NITE) process. Effect of microstructure and density on the sintering temperature in NITE-SiC/SiC composites are described and discussed with the fiber direction of unidirection and two dimension woven structures.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.337-341
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• 2016

Cu-30 vol% SiC composites with relatively densified microstructure and a sound interface between the Cu and SiC phases were obtained by pressureless sintering of PCS-coated SiC and Cu powders. The coated SiC powders were prepared by thermal curing and pyrolysis of PCS. Thermal curing at $200^{\circ}C$ was performed to fabricate infusible materials prior to pyrolysis. The cured powders were heated treated up to $1600^{\circ}C$ for the pyrolysis process and for the formation of SiC crystals on the surface of the SiC powders. XRD analysis revealed that the main peaks corresponded to the ${\alpha}$-SiC phase; peaks for ${\beta}$-SiC were newly appeared. The formation of ${\beta}$-SiC is explained by the transformation of thermally-cured PCS on the surface of the initial ${\alpha}$-SiC powders. Using powder mixtures of coated SiC powder, hydrogen-reduced Cu-nitrate, and elemental Cu powders, Cu-SiC composites were fabricated by pressureless sintering at $1000^{\circ}C$. Microstructural observation for the sintered composites showed that the powder mixture of PCS-coated SiC and Cu exhibited a relatively dense and homogeneous microstructure. Conversely, large pores and separated interfaces between Cu and SiC were observed in the sintered composite using uncoated SiC powders. These results suggest that Cu-SiC composites with sound microstructure can be prepared using a PCS coated SiC powder mixture.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.14-19
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• 1999

Using a single precursor of hexamethyldisilane $(Si_{2}(CH_{3})_{6})$, $\beta$-SiC film was successfully deposited on a Si substrate at $1100^{\circ}C$ by a chemical vapor deposition method. Selectivity of SiC deposition on a Si substrate partially covered with a masking material was investigated by introducing HCl gas into hexamethyldisilane/$H_{2}$ gas system during the deposition. The schedule of the precursor and HCl gas flows was modified so that the selectivity of SiC deposition between a Si substrate and a mask material should be improved. It was confirmed that the selectivity of SiC deposition was improved by introducing HCl gas. Also, the pulse gas flow technique was effective to enhance the selectivity.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.393-393
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• 2013

나노입자를 포함하는 합성물은 전자소자와 광전소자의 응용 가능성 때문에 많은 연구가 진행되고 있다. 복합층을 사용한 소자의 전기적 성질에 대한 연구는 많이 진행되었으나, SiC/SiNx 다층 복합층 소자에 대한 광학적 특성에 대한 연구는 상대적으로 미흡하다. 본 연구는 SiC/SiNx 다층 복합층을 사용하여 스퍼터링 방법으로 형성하고 열처리를 사용하여 복합층의 미세구조와 광학적 특성을 조사하였다. SiNx층을 p-형 Si 기판 위에 성장한 후 SiC층을 형성하였다. 3번의 주기적인 성장으로 다층구조를 형성하고, 30분 동안 열처리 하였다. 투과전자현미경상은 SiC/SiNx 복합층에 SiC 나노입자가 형성한 것을 확인하였다. 광류미네센스 스펙트럼 결과는 형성한 SiC/SiNx 복합층을 열처리할 때 SiC층에서 나타나는 주된 피크 위치가 변위되는 것을 보였다. 광류 미네센스 스펙트럼 결과에서 나타난 주된 피크가 열치리에 따라 변화하는 원인을 규명하였다.