• Bulletin of the Korean Chemical Society
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• 제33권8호
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• pp.2567-2573
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• 2012

We successfully synthesized $Fe_3O_4@SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that polyethyleneimine (PEI) with low molecular weight of 2.0-4.0 kDa was covalently conjugated with the resulting $Fe_3O_4@SiO_2$ nanoparticles by silane coupling reaction. The PEI-$Fe_3O_4@SiO_2$ nanoparticles were further used as gene delivery vector for a human fibroblast cell (IMR-90) line. Gene transfection efficiency of the PEI-$Fe_3O_4@SiO_2$ complexes did not increase remarkably after magnetofection; however, the addition of Lipofectamine 2000 significantly increased the transfection efficiency of the PEI-$Fe_3O_4@SiO_2$ complexes. We believe that the present approach could be utilized for magnetofection as alternative to $Fe_3O_4$ nanoparticles conjugated with the PEI of high molecular weight thanks to its relatively low cytotoxicity and high transfection efficiency.

• 한국분말재료학회지
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• 제17권6호
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• pp.482-488
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• 2010

In this study, $FeSi_2$ as high temperature performance capable thermoelectric materials was manufactured by powder metallurgy.The as-casted Fe-Si alloy was annealed for homogenization below $1200^{\circ}C$ for 3 h. Due to its high brittleness, the cast alloy transformed to fine powders by ball-milling, followed by subsequent compaction (hydraulic pressure; 2 GPa) and sintering ($1200^{\circ}C$, 12 h). In order to precipitate ${\beta}-FeSi_2$, heat treatment was performed at $850^{\circ}C$ with varying dwell time (7, 15 and 55 h). As a result of this experiment thermoelectric phase ${\beta}-FeSi_2$ was quickly transformed by powder metallurgical process. There was not much change in powder factor between 7h and 55h specimens.

• 한국주조공학회지
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• 제33권2호
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• pp.69-74
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• 2013

Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of $156{\times}156$ mm and thickness of $300{\pm}20$ um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.

• 자원리싸이클링
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• 제11권5호
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• pp.21-23
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• 2002

A new process based on the co-precipitation method was developed fer removing harmful impurities during Mn-Zn ferrite production such as $SiO_2$ and P from waste pickle liquor. By this process a final result of less than 100 ppm of $SiO_2$ and less than 10 ppm of P content in the ferric oxide is easily attained. Though Ca cannot be removed by this process, water rinsing of the ferric oxide is effective fer reducing Ca content to less than 100 pm. For further purification, the origins of each impurity must be investigated and then taken away.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.199-201
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• 2002

현존 최고의 효율 특성을 나타내고 있는 PERL 전지와 유사한 구조를 갖는 PM 전지와 에피텍셜 베이스구조를 갖는 새로운 Si EBS 태양전지를 제작하여 이들의 효율특성을 비교 분석하였다. 본 실험에서 EBS 전지는 이미터 표면의 형상에 따라 EBS-T 전지와 EBS-P 전지로 구분되고 있다. EBS-T 전지는 EBS-P 전지에 비해 약 15%, PIN 전지에 비해 약 60%의 효율 개선 효과가 있었다.

• 연구논문집
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• 통권34호
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• pp.131-138
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• 2004

Porous silicon nitride ceramics were prepared by Self-propagating High Temperature Synthesis from silicon powder, silicon nitride powder and the pore-forming precursor. The microstructure, porosity and the flexural strength of the porous silicon nitride ceramics were varied according to the Si/$Si_3N_4$ ratio, size and amount of the pore-forming precursors. Some samples exhibited as high flexural strength as $162\pm24$ MPa. The high strength is considered to result from the fine pore size and the strong bonding among the silicon nitrid particles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.361-362
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• 2008

에폭시 메트릭스에 $10{\pm}5nm$ SiO2 입자를 함량별 (1,3,5,7,9wt%)로 혼합하여 초음파 및 균질기를 이용한 분산을 실시하여 나노콤포지트를 제조하였다. 엉킴이 있는 나노입자를 물리적분산법을 이용하여 분산시킬 수 있었고, 그 결과 여러특성을 연구하였다. 기계적 굴곡강도 특성은 나노입자 충진함량 증가에따라 증가되는 경향을 나타내었고, 무충진 에폭시수지에 비하여 상대적으로 높은 굴곡강도를 나타내었다. 나노입자의 충진함량 증가에따라 절연파괴강도는 1wt%에서 가장 높는 절연파괴강도를 기록하였고 함량증가에 따라 약간 감소되는 경향을 보이고 있다. 이는 여러 연구자의 경향과 대체로 유사함을 알 수 있었다.

• 대한화학회지
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• 제56권4호
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• pp.478-483
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• 2012

We successfully synthesized $Fe_3O_4/SiO_2$ nanoparticles with ultrathin silica layer of $1.0{\pm}0.5$ nm that was fine controlled by changing concentration of $Fe_3O_4$. Among various reaction conditions for silica coating, increasing concentration of $Fe_3O_4$ was more effective approach to decrease silica thickness compared to water-to-surfactant ratio control. Moreover, we found that concentration of the 1-octanol is also important factor to produce the homogeneous $Fe_3O_4/SiO_2$ nanoparticles. The present approach could be available to apply on preparation of other core/shell nanoparticles with ultrathin silica layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.68-68
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• 1997

pp-typpe Si(100) Metal-Oxide-Semiconductor(MOS) 구조에서 산화막과 실리콘 사이의 계면상태 및 결함상태를 Isothermal Cappacitance Transient Sppectroscoppy (ICTS)방법을 이용하여 조사하였다. 특히 pplasma를 이용한 수소화이후 이 구조의 계면상태와 결함상태의 변화를 연구하였다. 상온에서 수소화한 MOS 구조의 경우 결함 상태의 농도가 급속히 감소함을 알 수 있었다. 이 구조에서 나타나는 모든 결함상태의 농도가 급격하게 감소하는 반면에, 수소화에 의한 새로운 깊은준이 결함상태도 관측되었다. 이 깊은 준위 결함 상태는 가전자대 위로부터 0.38eV 위치에 존재하였으며, 열적으로 안정된 결함상태로서, 해리에너지가 2.15$\pm$0.05 eV 이었다. 수소화이후 나타난 이 결함상태는 수소 플라즈마에 의해 구속된 Si원자가 수소원자와 결합하여 outdiffusion함으로 나타난 결함상태로 생각된다.

• 한국세라믹학회지
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• 제43권6호
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• pp.327-332
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• 2006

The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${\sim}0.3_{-{\mu}m}$ SiC powder was used as a starting powder, a high strength of $257{\pm}42\;MPa$ was achieved at a relative density of ${\sim}80%$.