• Korean Journal of Optics and Photonics
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• v.11 no.1
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• pp.13-18
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• 2000

The SiOxNy thin films were prepared on Si(lOO) by reactive RF sputtering method. The reactive gas ratio and the power were used as parameters for depositing SiOxNy thin fims. The properties of ${SiO_x}{N_y}$ thin tilms were investigated by XRD, XPS, refractive index and extinction coefficient analyzer (n'||'&'||'k analyzer), and FfIR. It was found by the results of the x-ray diffraction measurement that SiOxNy thin films were grown to an amorphous structure. From the results of the XPS, and the n'||'&'||'k analyzer, it was found that refractive index was intended to increase with the increasement of the relative nitrogen contents of the ${SiO_x}{N_y}$ thin films.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.424-430
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS (metal-oxide-nitride-oxide-semiconductor) EEPROM was investigated by AES, SIMS, TEM and AFM. The ONO films with different dimension of tunneling oxide, nitride, and blocking oxide were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of $SiO_2$(blocking oxide)/O-rich SiOxNy (interface)/ N-rich SiOxNy(nitride)/O-rich SiOxNy(tunneling oxide). In addition, the SiON phase is distributed mainly near the tunneling oxide/nitride and nitride/blocking oxide interfaces, and the $Si_2NO$ phase is distributed mainly at nitride side of each interfaces and in tunneling oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.93-94
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• 2005

본 연구에서는 저온 공정에서 제작되는 소자에의 응용을 위하여 Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD) 내에서 $N_2O$ 기체를 활용한 plasma oxidation을 통한 silicon 표면의 oxynitridation과 이로부터 tunnel gate dielectirics로 사용될 SiON 층을 형성하였으며, 형성된 SiOxNy 층의 전기적 특성을 측정하여 tunnel gate dielectrics로서 효과적인 기능을 수행함을 확인하였다. 형성된 박막의 성분 분석을 위하여 energy dispersive spectroscopy(EDS)를 이용하여 SiOxNy 층의 생성을 확인하였으며, 전기적인 특성을 통하여 tunnel gate dielectrics의 기능을 수행함을 알 수 있었다. 형성된 SiOxNy 층은 초박막 형태임에도 절연막으로서의 기능을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.36-40
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• 2007

Inorganic layers, such as SiOxNy and SiOx deposited using plasma sublimation method, were tested as passivation layer for organic thin-film-transistors (OTFTs). OTFTs with bottom-gate and bottom-contact structure were fabricated using pentacene as organic semiconductor and an organic gate insulator. SiOxNy layer gave little change in characteristics of OTFTs, but SiOx layer degraded the performance of OTFTs severely. Inferior barrier properties related to its lower film density, higher water vapor transmission rate (WVTR) and damage due to process environment of oxygen of SiOx film could explain these results. Polyurea and polyvinyl acetates (PVA) were tested as organic passivation layers also. PVA showed good properties as a buffer layer to reduce the damage come from the vacuum deposition process of upper passivation layers. From these results, a multilayer structure with upper SiOxNy film and lower PVA film is expected to be a superior passivation layer for OTFTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.41-41
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• 2009

본 연구에서 사용한 대향 타겟식 스퍼터링(Facing Targets Sputtering) 법은 일반 스퍼터링 법의 단점을 보완한 고밀도 저온 고속성막이 가능한 장점을 가지고 있기 때문에 플랙시블 디스플레이의 기체 투과 방지막으로 많이 쓰이고 있는 SiOxNy, SiOx, SiNx의 박막을 다층으로 증착하여 polymer 기판 위에 조건에 따라 증착 후 박막의 특성을 연구하였다. 제작된 박막의 광학적 특성을 UV-VIS spectrophotometer(Shimadzu Co.)를 사용하여 200~1100nm의 파장 영역에서 광 투과도를 측정하였으며 박막의 두께와 균일도는 $\alpha$-step(Veeco Co.)을 사용하여 측정하였고, 절대 정량이 가능하고 비파괴 분석법인 RBS(KOBE STEEL LTD.)를 이용하여 표면의 성질을 규명하고 XRR(PANalytical X'Pert PRO)을 분석하여 박막의 계면영역에 대한 물성 변화를 평가하고 박막의 밀도를 측정하였다. SEM(Digital Instrument Co.) 사진을 통해 단면과 표면을 관찰하였고 구조적 특성은 AFM(Digital Instrument Co.)와 XRD(Rigaku Co.) 통해 측정하였고 박막의 성분비는 EDS(JEOL Co.)를 사용하였으며 투습률 측정장치 (MOCON)을 이용하여 WVTR를 측정하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.200-200
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• 2010

이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1699-1705
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• 1989

Nitridation of about 300\ulcornerSiO2 filmss thermally grown on Si was performed in NH3 plasm ambient (0.2-2 torr) at 900\ulcornerC-1100\ulcorner for 15-20 minutes. The peoperties of those films have been investigated by analyzing the AES and the SIMS data, and the results of the I-V and the C-V measurements. At the plasma ambient of less than 1.5 torr pressure, etching of the films have been shown. Above the 1.5 torr pressure, however, SiO2 films were nitrided as SiIxNy. Plasma thermal nitridation of SiO2 by addition of small amount (6%) of CF4 to the NH3 showed higher pile-up N concentration in the surface region of SiOxNy film. The higher the nitridation temperature is and the longer the nitridation time is the larger the dielectric constant is. The plasma thermal nitridation of silicon dioxide on silicon causes the flat-band voltage shift based on the formation of the positive charge. The conduction mechanism for SiOxNy films could be elucidated by Fowler-Nordheim tnneling model. By SIMS analysis, surface of the film nitrided in plasma process has less contamination than that of the film nitrided in open-tube process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.2-421.2
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• 2016

고효율 태양전지에서 후면 반사 방지막은 장파장대(900nm~1200nm) 빛의 내부 반사를 증가시켜 광흡수도를 개선한다. 태양전지 후면에 박형 절연층 구조를 구성함으로써 특정 파장에서 높은 반사도를 얻을 수 있는 Bragg mirror 구조를 이론적으로 계산할 수 있다. Bragg mirror 구조를 이용하여 태양전지의 후면 반사층(Rear reflector layer)을 형성함으로써 태양전지 내부의 광흡수도를 개선할 수 있다. 후면 반사 방지막(Rear anti-reflection coating)으로 사용되는 Al2O3와 SiOxNy 또는 이러한 두 가지 물질의 겹층 구조를 구성하여 장파장대 빛의 반사도 차이에 의한 광흡수도 개선 정도를 광학 시뮬레이션을 통해 계산하였다. 광학 시뮬레이션은 TCAD를 이용하였으며 두 가지 겹층 구조에서 각 반사 방지막의 두께에 따른 단락 전류(Jsc)의 개선 정도, 후면 반사층 두께의 최적화 조건을 계산하였다. 후면 반사방지막을 제외한 기본적인 태양전지 구조는 n-type PERC 구조를 사용하였으며, 후면 반사방지막만의 광학적 특성을 살펴보기 위해 전극은 광학적으로 투명하다고 가정하였다. 반사방지막 두께의 범위는 Al2O3(5-30nm), SiNx(150-300nm), SiOxNy(150-300nm)에서 수행하였으며, 각각 1nm, 2nm 간격으로 진행하였다. Al2O3/SiOxNy 구조에서는 단락 전류가 32.45-32.87mA/cm2 값을 가진다. Al2O3/SiNx 구조에서는 단락 전류가 32.59-32.87mA/cm2 값을 가진다. 결론적으로, 후면 반사방지막의 겹층 구조를 통해 광흡수도를 증가 시킬 수 있으며, TCAD 시뮬레이션을 통하여 입사되는 태양광 스펙트럼에 최적화된 구조를 설계할 수 있다.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.12
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• pp.1649-1655
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• 1988

Thermally growon SiO2 films were thermally nitrided in a hot-wall furnace and in a RF-heated cold-wall reactor and their characteristics were investigated by the AES and the C-V dmeasurements. The Auger depth profile show that 200\ulcornerSiO2 film nitrided at 1200\ulcorner, for 2hrs by the hot-wall process has a nitrogen-rich layer near the SiOxNy-Si interface. However the nitrogen-ri h layer is not observed in the case of cold-wall process. The maximum flat-band voltage for the SiO2 films nitrided by the hot-wall process is higher than by the cold-wall process, and the peak value of flat-band voltage for the hot-wall process appears the longer nitridation time than that for the cold-wall process. The SiOxNy-Si interface shift toward the Si substrate for the case of the hot-wall process is larger than that for the cold-wall process.