• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.287.1-287.1
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• 2016

Three-dimensional (3-D) semiconductor nanoarchitectures, including nano- and micro- rods, pyramids, and disks, are emerging as one of the most promising elements for future optoelectronic devices. Since these 3-D semiconductor nanoarchitectures have many interesting unconventional properties, including the use of large light-emitting surface area and semipolar/nonpolar nano- or micro-facets, numerous studies reported on novel device applications of these 3-D nanoarchitectures. In particular, 3-D nanoarchitecture devices can have noticeably different current spreading characteristics compared with conventional thin film devices, due to their elaborate 3-D geometry. Utilizing this feature in a highly controlled manner, color-tunable light-emitting diodes (LEDs) were demonstrated by controlling the spatial distribution of current density over the multifaceted GaN LEDs. Meanwhile, for the fabrication of high brightness, single color emitting LEDs or laser diodes, uniform and high density of electrical current must be injected into the entire active layers of the nanoarchitecture devices. Here, we report on a new device structure to inject uniform and high density of electrical current through the 3-D semiconductor nanoarchitecture LEDs using metal core inside microtube LEDs. In this work, we report the fabrications and characteristics of metal-cored coaxial $GaN/In_xGa_{1-x}N$ microtube LEDs. For the fabrication of metal-cored microtube LEDs, $GaN/In_xGa_{1-x}N/ZnO$ coaxial microtube LED arrays grown on an n-GaN/c-Al2O3 substrate were lifted-off from the substrate by wet chemical etching of sacrificial ZnO microtubes and $SiO_2$ layer. The chemically lifted-off layer of LEDs were then stamped upside down on another supporting substrates. Subsequently, Ti/Au and indium tin oxide were deposited on the inner shells of microtubes, forming n-type electrodes of the metal-cored LEDs. The device characteristics were investigated measuring electroluminescence and current-voltage characteristic curves and analyzed by computational modeling of current spreading characteristics.

• Restorative Dentistry and Endodontics
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• v.23 no.1
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• pp.68-93
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• 1998

The physical properties of polymer are greatly influenced by the extent to which a resin cures. The presence of un reacted monomer can, have a plasticizing effect on the polymer, thereby altering the physical and mechanical properties of dentin bonding agent (DBA). If the DBA does not polymerize sufficiently, it will leave a weak bonding layer and lead to lower bond strength. The purpose of this study was to evaluate the shear bond strengths(SBS) and the degree of conversion (DC) of 4 commercialy avilable dentin bonding systems which are composed of 2 multi-bottle systems [Scotchbond Multi-Purpose (SMP), AeliteBond(AB)] and 2 onebottle systems [SingleBond(SB), One-Step(OS)]. For shear bond strength measurement, labial surfaces of freshly extracted bovine incisors were ground with # 600 grit SiC paper to expose dentin. Four different groups of samples were formed, with 10 samples. being made for each of the 4 commercial DBA in each group according to the curing sequences of DBA and overlayer thickness of composites: Group I (standard cure and 1mm thick composites) : The DBA was light cured and the composites of 1mm thickness was applied ; Group II (standard cure and 2mm thick composites) : The DBA was light cured and the composites of 2mm thickness was applied; Group III (simultaneous cure and 1mm thick composites) : The DBA was not light-cured and simultaneously cured with composites of 1mm thickness; Group N (simultaneous cure and 2mm thick composites) : The DBA was. not light-cured and simultaneously cured with composites of 2mm thickness. The SBS was measured immediately after the composites was bonded to the bovine dentin using an Instron machine. The DC of the DBA was examined in a thin film under simulated conditions of the experimental groups according to the curing sequences and overlayer thickness of composites in the SBS test. using a Fourier transform Infrared(FTIR) spectrometer. The following results were obtained from SBS tests and DC measurements 1. In SBS tests, the multi-bottle DBA(SMP, AB) had a generally higher bond strength values than the one bottle DBA(SB, OS). In DC measurements, the one bottle DBA(SB, OS) had a significantly higher DC than the multi-bottle DBA(SMP, AB). 2. In all DBAs except OS, there was no significant difference between the bond strength of group I (standard cure and 1mm thick composites) and that of group III (simultaneous cure and 1mm thick composites). SMP, SB in Group I had a significantly higher DC than those in group III, but AB, OS in group I had a significantly lower DC than those in group III 3. All DBAs in Goup II (standard cure and 2mm thick composites) had significantly higher bond strength and DC than those in Group N (simultaneous cure and 2mm thick composites). 4. In all DBAs, there was no significantly different SBS and DC between Group I and Group II, but all DBAs in Group III had significantly higher SBS and DC than those in Group IV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.144.2-144.2
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• 2016

Diamond-like carbon (DLC) coatings have been widely applied to the mechanical components, cutting tools due to properties of high hardness and wear resistance. Among them, hydrogenated amorphous carbon (a-C:H) coatings are well-known for their low friction properties, stable production of thin and thick film, they were reported to be easily worn away under high temperature. Non-hydrogenated tetrahedral amorphous carbon (ta-C) is an ideal for industrial applicability due to good thermal stability from high $sp^3$-bonding fraction ranging from 70 to 80 %. However, the large compressive stress of ta-C coating limits to apply thick ta-C coating. In this study, the thick ta-C coating was deposited onto Inconel alloy disk by the FCVA technique. The thickness of the ta-C coating was about $3.5{\mu}m$. The tribological behaviors of ta-C coated disks sliding against $Si_3N_4$ balls were examined under elevated temperature divided into 23, 100, 200 and $300^{\circ}C$. The range of temperature was setting up until peel off observed. The experimental results showed that the friction coefficient was decreased from 0.14 to 0.05 with increasing temperature up to $200^{\circ}C$. At $300^{\circ}C$, the friction coefficient was dramatically increased over 5,000 cycles and then delaminated. These phenomenon was summarized two kinds of reasons: (1) Thermal degradation and (2) graphitization of ta-C coating. At first, the reason of thermal degradation was demonstrated by wear rate calculation. The wear rate of ta-C coatings showed an increasing trend with elevated temperature. For investigation of relationship between hardness and graphitization, thick ta-C coatings(2, 3 and $5{\mu}m$) were additionally deposited. As the thickness of ta-C coating was increased, hardness decreased from 58 to 49 GPa, which means that graphitization was accelerated. Therefore, now we are trying to increase $sp^3$ fraction of ta-C coating and control the coating parameters for thermal stability of thick ta-C at high temperatures.

• Journal of Powder Materials
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• v.22 no.5
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• pp.321-325
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• 2015

The triboelectric property of a material is important to improve an efficiency of triboelectric generator (TEG) in energy harvesting from an ambient energy. In this study, we have studied the TEG property of a semiconducting $SnO_2$ which has yet to be explored so far. As a counter triboelectric material, PET and glass are used. Vertical contact mode is utilized to evaluate the TEG efficiency. $SnO_2$ thin film is deposited by atomic layer deposition on bare Si wafer for various thicknesses from 5.2 nm to 34.6 nm, where the TEG output is increased from 13.9V to 73.5V. Triboelectric series are determined by comparing the polarity of output voltage of 2 samples among $SnO_2$, PET, and glass. In conclusion, $SnO_2$, as an intrinsic n-type material, has the most strong tendency to be positive side to lose the electron and PET has the most strong tendency to be negative side to get the electron, and glass to be between them. Therefore, the $SnO_2$-PET combination shows the highest TEG efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.188.1-188.1
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• 2015

For present investigation Fe/MgO/Fe/Co multilayer stack is grown on Si substrate using e-beam evaporation in ultrahigh vacuum. This stack is irradiated perpendicularly by 120 MeV $Ag^{8+}$ at different fluences ranging from $1{\times}10^{11}$ to $1{\times}10^{13}ions/cm^2$ in high vacuum using 15UD Pelletron Accelerator at Inter University Accelerator Centre, New Delhi. Magnetic measurements carried out on pre and post irradiated stacks show significant changes in the shape of perpendicular hysteresis which is relevant with previous observation of re-orientation of magnetic moment along the direction of ion trajectory. However increase in plane squareness may be due to the modification of interface structure of stacks. X-ray reflectivity measurements show onset of interface roughness and interface mixing. X-ray diffraction measurements carried out using synchrotron radiation shows amorphous nature of MgO and Co layer in the stack. Peak corresponding body centered Fe [JCPDS-06-0696] is observed in X-ray diffraction pattern of pre and post irradiated stacks. Peak broadening shows granular nature of Fe layer. Estimated crystallite size is $22{\pm}1nm$ for pre-irradiated stack. Crystallite size first increases with irradiation then decreases. Structural quality of these stacks was further studied using transmission electron microscopic measurements. Thickness from these measurements are 54, 36, 23, 58 and 3 nm respectively for MgO, Fe, MgO, Fe+Co and Au layers in the stack. These measurements envisage poor crystallinity of different layers. Interfaces are not clear which indicate mixing at interface. With increase fluence mixing and diffusion was increased in the stack. X-ray absorption spectroscopic measurements carried out on these stacks show changes of Fe valence state after irradiation along with change of O(2p)-metal (3d) hybridized state. Valence state change predicts oxide formation at interface which causes enhanced in-plane magnetization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.1
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• pp.88-93
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• 2024

To evaluate the possibility as a multi-level memory medium for the Ge₂Sb₂Te₅/TiN/W-doped Ge₂Sb₂Te₅ cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge₂Sb₂Te₅ and W-doped Ge₂Sb₂Te₅ thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto-multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

• Korean Journal of Materials Research
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• v.11 no.7
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• pp.575-579
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• 2001

GaN buffer layer and epilayer have been grown on sapphire (0001) by metal organic chemical vapor deposition (MOCVD). GaN buffer layer ranging from 26 nm to 130 nm in thickness was grown at 55$0^{\circ}C$ prior to the 4 $\mu\textrm{m}$ thick GaN epitaxial deposition at 110$0^{\circ}C$. After GaN buffer layer growth, buffer layer surface was examined by atomic force microscopy (AFM). As the thickness of GaN buffer layer was increased, surface morphology of GaN epilayer was investigated by scanning electron microscopy (SEM). Double crystal X-ray diffraction (DCXRD) and Raman spectroscopy were employed to study crystallinity of GaN epilayers. Optical properties of GaN epilayers were measured by photoluminescence (PL). The epilayer grown with a thin buffer layer had rough surface, and the epilayer grown with a thick buffer layer had mirror-like surface of epilayer. Although the stress on the latter was larger than on the former, its crystallinity was much better. These results imply that the internal free energy is decreased in case of the thick buffer layer. Decrease in internal free energy promotes the lateral growth of the GaN film, which results in the smoother surface and better crystallinity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.274-274
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• 2014

금속칼코게나이드 화합물중 하나인 $MoS_2$는 초저 마찰계수의 금속성 윤활제로 널리 사용되고 있으며 흑연과 비슷한 판상 구조를 지니고 있어 기계적 박리법을 통한 그래핀의 발견 이후 2차원 박막 합성법에 대한 활발한 연구가 진행되고 있다. 최근 다양한 응용이 진행 중인 그래핀의 경우 높은 전자이동도, 기계적 강도, 유연성, 열전도도 등 뛰어난 물리적 특성을 지니고 있으나 zero-bandgap으로 인한 낮은 on/off ratio는 thin film transistor (TFT), 논리회로(logic circuit) 등 반도체 소자 응용에 한계가 있다. 하지만 $MoS_2$는 벌크상태에서 약 1.2 eV의 indirect band-gap을 지닌 반면 단일층의 경우 1.8 eV의 direct-bandgap을 나타내고 있다. 또한 단일층 $MoS_2$를 이용하여 $HfO_2/MoS_2/SiO_2$ 구조의 트랜지스터를 제작하였을 때 $200cm^2/v^{-1}s^{-1}$의 높은 mobility와 $10^8$ 이상의 on/off ratio 나타낸다는 연구가 보고되어 있어 박막형 트랜지스터 응용을 위한 신소재로 주목을 받고 있다. 한편 2차원 $MoS_2$ 박막을 합성하기 위한 대표적인 방법인 기계적 박리법의 경우 고품질의 단일층 $MoS_2$ 성장이 가능하지만 대면적 합성에 한계를 지니고 있으며 화학기상증착법(CVD)의 경우 공정 gas의 분해를 위한 높은 온도가 요구되므로 박막형 투명 트랜지스터 응용을 위한 플라스틱 기판으로의 in-situ 성장이 어렵기 때문에 이를 보완할 수 있는 $MoS_2$ 박막 합성 공정 개발이 필요하다. 특히 Plasma enhanced chemical vapor deposition (PECVD) 방법은 공정 gas가 전기적 에너지로 분해되어 chamber 내부에서 cold-plasma 형태로 존 재하기 때문에 박막의 저온성장 및 대면적 합성이 가능하며 고진공을 바탕으로 합성 중 발생하는 오염 요소를 효과적으로 제어할 수 있다. 본 연구에서는PECVD를 이용하여 plasma power, 공정압력, 공정 gas의 유량 등 다양한 공정 변수를 조절함으로써 저온, 저압 조건하에서의 $MoS_2$ 박막 성장 가능성을 확인하였으며 전구체로는 Mo 금속과 $H_2S$ gas를 사용하였다. 또한 향후 flexible 소자 응용을 위한 플라스틱 기판의 녹는점을 고려하여 공정 온도는 $300^{\circ}C$ 이하로 설정하였으며 합성된 $MoS_2$ 박막의 두께 및 화학적 구성은 Raman spectroscopy를 이용하여 확인 하였다. 공정온도 $200^{\circ}C$와 $150^{\circ}C$에서 성장한 $MoS_2$ 박막의 Raman peak의 경우 상대적으로 낮은 공정온도로 인하여 Mo와 H2S의 화학적 결합이 감소된 것을 관찰할 수 있었고 $300^{\circ}C$의 경우 약 $26{\sim}27cm^{-1}$의 Raman peak 간격을 통해 5~6층의 $MoS_2$ 박막이 형성 된 것을 확인할 수 있었다.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.