• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
• /
• pp.880-883
• /
• 2003

ZnO thin films for Film Bulk Acoustic Resonator(FBAR) were prepared by FTS (Facing Target Sputtering) system. The FTS methode enable to generate high density plasma, and it has a high deposition rate at 1mTorr pressure. Therefore, the ZnO thin films were deposited on $AZO/SiO_2/Si$ substrates with oxygen gas flow rate, and the other sputtering conditions were fixed such as a sputtering current of 0.8A, a substrate temperature at room temperature. AZO bottom electrode were deposited on $SiO_2/Si$ substrate and by Zn:Al(Al:2wt%) metal target. ZnO thin film thickness and the c-axis preferred orientation of ZnO thin film were evaluated by ${\alpha}-step$ and XRD.

• Bulletin of the Korean Chemical Society
• /
• 제32권11호
• /
• pp.3991-3995
• /
• 2011

$TiO_2-SiO_2-In_2O_3$ nanocomposite thin film was deposited on the glass substrates using a dip coating technique. The morphology, surface composition, surface hydroxyl groups, photocatalytic activity and hydrophilic properties of the thin film were investigated by AFM, XPS, methyl orange decoloring rate and water contact angle measurements. The hydroxyl content for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ nanocomposite films was calculated to be 11.6, 17.1 and 20.7%, respectively. $TiO_2-SiO_2-In_2O_3$ film turned superhydrophilic after 180-min irradiation with respect to pure $TiO_2$ and $TiO_2-SiO_2$ thin films. The photocatalytic decomposition of methyl orange for $TiO_2$, $TiO_2-SiO_2$ and $TiO_2-SiO_2-In_2O_3$ thin films was measured as 38.19, 58.71 and 68.02%, respectively. The results indicated that $SiO_2$ and $In_2O_3$ had a significant effect on the hydrophilic, photocatalytic and self-cleaning properties of $TiO_2$ thin film.

• 마이크로전자및패키징학회지
• /
• 제9권3호
• /
• pp.37-41
• /
• 2002

본 연구에서는 자기 공명 특성을 이용한 박막 센서의 멤브레인 및 박막 센서의 특성을 알아보았다. 멤브레인으로 유망한 물질로 $Si_xN_y$과 SiC가 있으며, 최적의 멤브레인 형성 조건을 알고자 박막의 잔류 응력 및 물성을 비교 분석하였다. 그 중에서 박막 센서에 적용 가능한 멤브레인으로 SiC보다 적절한 인장응력과 낮은 열팽창 계수를 가지는 $Si_xN_y$이 센서의 구조층으로 우수하였으며, $Si_xN_y$위에 박막 센서 물질을 증착 및 패턴닝(patterning)을 함으로써 센서의 자기 이력 곡선 및 자기 공진 주파수를 분석하였다. 센서에 인가되는 외부 자기장을 제거하면 자장에 의해 형성된 자화(magnetization)가 탄성 모드로 바뀌면서 에너지 방출에 의해 센서에서 전압이 발생하는데 이때 전압 발생 구간이 길어지면 기계적 진동이 야기되어 신호가 발생한다. 그리고 센서의 길이 및 폭이 증가할수록 자기공명 주파수가 감소하는 것을 볼 수 있다.

• 반도체디스플레이기술학회지
• /
• 제11권2호
• /
• pp.13-16
• /
• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
• /
• pp.85-90
• /
• 1998

Reactive ion etching (RIE) of Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the could be used effectively to etch the Ta-Al alloy thin film. The etching rate of the thin film at a Ta content of 50 mol% was about 67$\AA$/min. No selectivity between the Ta-Al alloy thin film and SiO2 thin films was observed during the etching with the CF4 gas and the etching rate of the SiO2 layer was 12 times faster than that of the Ta-Al alloy thin film. In addition, it was observed that photoresist of AZ5214 was more useful than Shiepley 1400-2 in RIE with the CF4 gas.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.985-988
• /
• 2008

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.

• 마이크로전자및패키징학회지
• /
• 제25권2호
• /
• pp.49-53
• /
• 2018

최근 유연 소자, 투명 소자, MEMS 소자와 같은 다양한 소자를 결합하는 시스템 집적화 기술이 많이 개발되고 있다. 이러한 다종 소자 시스템 제조 기술의 핵심 공정은 칩 또는 웨이퍼 레벨의 접합 공정, 기판 연삭 공정, 그리고 박막 기판 핸들링 기술이라 하겠다. 본 연구에서는 Si 기판 연삭 공정이 투명 박막 트랜지스터나 유연 전극 소재로 적용되는 산화주석 박막의 전기적 성질에 미치는 영향을 분석하였다. Si 기판의 두께가 얇아질수록 Si d-spacing은 감소하였고, Si 격자 내에 strain이 발생하였다. 또한, Si 기판의 두께가 얇아질수록 산화주석 박막 내 캐리어 농도가 감소하여 전기전도도가 감소하였다. 얇은 산화 주석 박막의 경우 전기전도도는 두꺼운 산화 주석 박막보다 낮았으며 Si 기판의 두께에 의해 크게 변하지 않았다.

• 한국진공학회지
• /
• 제5권2호
• /
• pp.161-168
• /
• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• Journal of Magnetics
• /
• 제12권1호
• /
• pp.21-26
• /
• 2007

Si-based electromagnetic noise suppressors on coplanar waveguide transmission lines incorporated with a $SiO_2$ dielectric layer and a nanogranular Co-Fe-Al-O magnetic thin film are reported. Unlike glass-based devices, large signal attenuation is observed even in the bare structure without coating the magnetic thin film. Much larger signal attenuation is achieved in fully integrated devices. The transmission scattering parameter ($S_{21}$) is as small as -90 dB at 20 GHz at the following device dimensions; the thicknesses of the $SiO_2$ and Co-Fe-Al-O thin films are 0.1 $\mu$m and 1 $\mu$m, respectively, the length of the transmission line is 15 mm, and the width of the magnetic thin film is 2000 $\mu$m. In all cases, the reflection scattering parameter ($S_{11}$) is below -10 dB over the whole frequency band. Additional distributed capacitance formed by the Cu transmission line/$SiO_2$/Si substrate is responsible for these characteristics. It is considered that the present noise suppressors based on the Si substrate are a first important step to the realization of MMIC noise suppressors.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.398-398
• /
• 2007

Most recently, the Liquid Crystal (LC) aligning capabilities achieved by ion beam exposure on the diamond-like carbon (DLC) thin film layer have been successfully studied. The DLC thin films have a high mechanical hardness, a high electrical resistance, optical transparency and chemical inertness. Nitrogen doped Diamond Like Carbon (NDLC) thin films exhibit properties similar to those of the DLC films and better thermal stability than the DLC films because C:N bonding in the NDLC film is stronger against thermal stress than C:H bonding in the DLC thin films. Moreover, our research group has already studied ion beam alignment method using the NDLC thin films. The nematic liquid crystal (NLC) alignment effects treated on the SiNx thin film layers using ion beam irradiation for three kinds of N rations was successfully studied for the first time. The SiNx thin film was deposited by plasma-enhanced chemical vapor deposition (PECVD) and used three kinds of N rations. In order to characterize the films, the atomic force microscopy (AFM) image was observed. The good LC aligning capabilities treated on the SiNx thin film with ion beam exposure for all N rations can be achieved. The low pretilt angles for a NLC treated on the SiNx thin film with ion beam irradiation were measure.