• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.544-551
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• 2008

We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.480-484
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• 2004

$LiGaO_2$ films have been grown on Si (100) substrates using a new single precursor $[Li(OCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ under high vacuum conditions $(5{\times}10^{-6}Torr)$. The $[Li(OCH_2CH_2OCH_3)_2Ga(CH_3)_2]_2$ was synthe-sized and characterized by using spectroscopic methods and single-crystal X-ray diffraction analysis. The chemical composition, crystalline structure, and morphology of the deposited films were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, and scanning electron microscopy. The results show that polycrystalline $LiGaO_2$ films preferentially oriented in the [010] direction can be deposited on Si (100) at 500-550$^{\circ}C$ by metal organic chemical vapor deposition (MOCVD). The single precursor $[LiOCH_2CH_2OCH_3)_2-Ga(CH_3)_2]_2$ has been found suitable for chemical vapor deposition of $LiGaO_2$ thin films on Si substrates.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.43-44
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• 2008

PECVD 방식에 의거 low-k 유전상수를 갖는 층간 절연막 (ILD)를 제작하였다. 전구체 BTMSM 액체를 기화하여 16sccm 에서부터 1 sccm씩 증가하면서 25sccm 까지 p-Si[100] 기판위에 유량비를 조절하였으며 60 sccm으로 일정산소 $O_2$ 가스를 반응 챔버에 도달하도록 하였다. 제작된 시편의 구성성분은 FTIR의 흡수선으로 확인하였고, 알루미늄 전극을 구현한 MIS (Al/SiOCH/p-si(100)) 구조의 커패시터를 가지고 정전용량-전압 (C-V) 특성을 측정하여 유전상수를 계산하였다. BTMSM/$O_2$에 의한 층간절연막의 k ~ 2 근방의 저유전상수는 유량비에 민감하게 의존되고 열처리에 의하여 $CH_3$의 소멸 및 Si-O-Si(C) 성장하는 효과에 의하여 더 낮아짐을 확인할 수 있었다. 또한 상온 및 대기압에서 공기 중에 노출시켜 자연 산화과정을 겪은 시편들의 유전상수는 전체적으로 증가하였지만, 열처리한 박막이 상대적으로 안정화된 것을 확인하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2011.05a
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• pp.30-30
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• 2011

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.41-45
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• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.35-39
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• 2008

We studied deposition of low-k SiOCH dielectric film by PECVD. DEMS(diethoxymethlysilane) precursor, which has two ethoxy groups along with one methyl group attached to the silicon atoms, was used as precursor. The SiOCH film was deposited as a function of oxygen flow rates ranging from 0 to 100sccm. The deposition rate($\AA$/min) of SiOCH film was increased due to the increase of oxygen radical as a function of $O_2$ flow rates. The dielectric constant was decreased from 3.0 to 2.77, as the film was annealed at $450^{\circ}C$ for 30 min. So, it could account that the dielectric constant changes sensitively with $O_2$ flow rates. Also, the leakage current of the annealed film exhibited stable curve than that of asdeposited. These results were caused by the increase of Si-O-Si group and decrease of Si-CH group and OH group within the film by annealing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.132-136
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• 2009

SiOC thin film of hybrid-type that is the limelight as low dielectric material of next generation were deposited by plasma enhanced chemical vapor deposition (PECVD) method with bistrimethylsilylmethane (BTMSM) precursor increased by 2 sccms from 24 sccms to 32 sccm. Manufactured samples are analyzed components by measuring FT/IR absorption lines. It is a tendency that seems to be growing of Si-O-Si(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The chemical shift in the XPS analysis was shown in the specimens between the BTMSM=26 sccm and BTMSM = 28 sccm. The binding energy of Si 2p, C 1s and O 1s electron orbit spectra was the low-est at the specimen of the BTMSM=26 sccm. From the results of electrical Properties using the 1 MHz C - V measurements, the dielectric constant was 2.32 at the specimen with the BTMSM = 26 sccm.

• Clean Technology
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• v.16 no.3
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• pp.191-197
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• 2010

Repair reaction of plasma damaged porous methyl doped SiOCH films was carried out with silylation agents dissolved in supercritical carbon dioxide ($scCO_2$) at various reaction time, pressure, and temperature. While a decrease in the characteristic bands at $3150{\sim}3560cm^{-1}$ was detectable, the difference of methyl peaks was not identified apparently in the FT-IR spectra. The surface hydrophobicity was rapidly recovered by the silylation. In order to induce effective repair in bulk phase, the wafer was heat treated before reaction under vacuum or ambient condition. The contact angle was slightly increased after the treatment and completely recovered after the subsequent silylation. Methyl groups were decreased after the plasma damage, but their recovery was not identified apparently from the FT-IR, spectroscopic ellipsometry, and secondary ion mass spectroscopy analyses. Furthermore, Ti evaporator was performed in a vacuum chamber to evaluate the pore sealing effect. The GDS analysis revealed that the open pores in the plasma damaged films were efficiently sealed with the silylation in $scCO_2$.