• 센서학회지
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• 제6권5호
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• pp.407-413
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• 1997

기판온도 $300^{\circ}C$에서 열증착법에 의해 p형 <100> Si 기판위에 CuPc(Copper Phthalocyanine) 결정 박막을 증착하였다. X선 회절분석으로부터 CuPc 박막은 a-축 방향으로 성장하였음을 알 수 있었다. CuPc분자들이 기판면위에 수직인 CuPc/Si박막의 광전특성을 조사하기 위하여 수직방향의 전류-전압 (I-V) 특성을 기판 Si의 특성과 비교 관찰하였다. 저항성 접촉을 위해 기판인 p형 Si위에 전극으로 Au를 증착시켰다. Au/Si 접합에 빛을 조사한 결과 전류는 증가하지만 광기전력효과는 관찰되지 않았다. p형 반도체인 CuPc 박막과 기판 p-Si의 접합은 장벽을 형성하지 않기 때문에 빛을 조사하지 않았을 때의 I-V 특성은 저항성을 나타낸다. 빛을 조사하였을 때 CuPc/Si 접합의 증가된 광전류는 Si 웨이퍼보다 현저하게 큰 것을 알 수 있다. 따라서 CuPc 층이 600 nm 파장에서의 붉은 빛을 현저하게 흡수하여 광전류에 기여하는 다량의 광캐리어를 형성함을 알 수 있다. CuPc/Si 박막은 $J_{sc}$ (short-circuit photocurrent) $4.29\;mA/cm^{2}$와 $V_{oc}$ (open circuit photovoltage) 12 mV의 광기전력 특성을 보여준다.

• 전기학회논문지
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• 제65권10호
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• pp.1694-1696
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• 2016

Present thin film solar cells with hydrogenated amorphous silicon oxide (a-SiO:H) as an absorber suffer from low fill factor(FF) of 61~64 [%] in spite of its benefits related to high open circuit voltage ($V_{oc}$). Since degraded quality of a-SiO:H absorber by alloying with oxygen can affect the FF, we aimed to achieve high photosensitivity by minimizing $CO_2$ gas addition. Improving optical gap($E_{opt}$) has been attained by strong hydrogen dilution combined with lowering substrate temperature down to 100 [$^{\circ}C$]. Small amount of the $CO_2$ was added in order to disturb microcrystalline formation by high hydrogen dilution. The developed a-SiO:H has high photosensitivity (${\sim}2{\times}10^5$) and high $E_{opt}$ of 1.85 [eV], which contributed to attain remarkable FF of 74 [%] and high $V_{oc}$ (>1 [V]). As a result, high power conversion efficiency of 7.18 [%] was demonstrated by using very thin absorber layer of only 100 [nm], even though we processed all experiment at extremely low temperature of 100 [$^{\circ}C$].

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.248-248
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• 2007

• 한국세라믹학회지
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• 제48권6호
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• pp.499-503
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• 2011

Recently, variety of organic and inorganic hybrid materials have recently investigated as alternative routes to SiOC, $SiO_2$ thin film formation at low temperatures for applications in electronic ceramics. Specially, silicon based polymers, such as polycarbosilane, polysilane and polysilazane derivatives have been studied for use in electronic ceramics and have been applied as dielectric or insulating materials. In this study, Polycarbosilane(PCS), which Si-$CH_2$-Si bonds build up the backbone of the polymer, has been investigated as low-k materials using a solution process. After heat treatment at 350$^{\circ}C$ under $N_2$ atmosphere, chemical composition and dielectric constant of the thin film were $SiO_{0.27}C_{1.94}$ and 1.2, respectively. Mechanical property measured using nanoindentor shows 1.37 GPa.

• 한국표면공학회지
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• 제27권2호
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• pp.99-108
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• 1994

Films of glass-ceramics $Li_2O-Al_2O_3-SiO_2$(LAS)system were prepared on substrate of an iron plate(SCP) by sol-gel technique using metal alkoxide such as Si$(OC_2H_5)_4$,Al$(OC_2H_9)_3$) and Ti$(OC_2H_6)_4$). Sol which was made by means of simple spray coating, on the substrate was hydrolyzed at 75~$80^{\circ}C$ in moisture cabinet (80~90 % humidity) to form the multicomponent gel. The films up to about 0.8~1.0$mu extrm{m}$ in thickness can be obtained by repeating operation, spraylongrightarrowhydrolysis and condensationlongrightarrowdryinglongrightarrowheating and crystallization at $700^{\circ}C$ for 3~5min. The far-infrared radiation spectra of the coated films on substrate were examined by FT-IR and of films was also observed by scanning electron micrograph technique. The thermal evaluation of the gel-film is followed by TG/DTA measurements. The structure evaluation is followedd X-ray diffraction. These results suggest that this process is applicable to far-infrared radiat at thin film technique.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2007년도 춘계학술발표회 초록집
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• pp.19-19
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• 2007

Recently, we have developed p-i-n hydrogenated amorphous silicon (a-Si:H) single junction (SJ) thin film solar cells with RF (13,56MHz) plasma enhanced chemical vapor deposition (PECVD) systems, and also successfully fabricated the mini-modules (>300$cm^2$), using laser scribing technique to form an integrated series connection, The efficiency of a mini-module was 7.4% (Area=305$cm^2$, $I_{SC}$=0.25A, $V_{OC}$=14.74V, FF=62%).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.154-154
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.219-219
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제37회 하계학술대회 초록집
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• pp.220-220
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• 2009

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.277-277
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• 2008