• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.435-439
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• 2009

The reason of lowering the dielectric constant of SiOC film was studied using parameters obtained from C-V measurement and refractive index. SiOC film was formed by the force of ionic bonding during the recombination of dissociated gases. Generally, the dielectric constant was obtained from the square of the refractive index or C-V measurement using the metal/insulator/Si structure. The dielectric constant consists of the ionic and electronic elements. It was researched about the dielectric constant of SiOC film using the average of the ionic and electronic elements. The dielectric constant decreased after annealing process. As deposited films trended toward the dielectric constant consisted of most ionic elements, on the other hand, annealed films mostly consisted of electronic elements. Because the effect of ionic elements reduced after annealing. Consequently, it was found that the electronic effect of SiOC film increased and the ionic effect of SiOC film decreased by the after-annealing.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• Korean Journal of Materials Research
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• v.24 no.3
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• pp.135-139
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• 2014

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of -5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.3
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• pp.1279-1283
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• 2012

SiOC films made by the inductive coupled CVD with dimethyldimethoxysilane were analyzed to find out the correlation between the chemical and optical properties by using the Foruier transform infrared spectroscopy, spectrophotometer and ellipsometer. The bonding structure of SiOC film was formed during the depositeion and the adhesion was increased after annealing process. SiOC film decreased the polarization by the chemical reaction between alkyl group and hydroxyl group, and increased the degree of amorphism. For the range of 950 cm-1 in FTIR spectra, the spectra were divided into two types depending on polar sites. The refractive index of SiOC film with the lowest polarization increased and the thickness of that decreased.

• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.13-16
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• 2012

Zinc oxide (ZnO) films were deposited by an RF magnetron sputtering system with the RF power of 200W and 300W and flow rate of oxygen gases of 20 and 30 sccm, in order to research the growth of ZnO on carbon doped silicon oxide (SiOC) thin film. The reflectance of SiOC film on Si film deposited by the sputtering decreased with increasing the oxygen flow rate in the range of long wavelength. In comparison between ZnO/Si and ZnO/SiOC/Si thin film, the reflectance of ZnO/SiOC/Si film was inversed that of ZnO/Si film in the rage of 200~1000 nm. The transmittance of ZnO film increased with increasing the oxygen gas flow rate because of the transition from conduction band to oxygen interstitial band due to the oxygen interstitial (Oi) sites. The low reflectance and the high transmittance of ZnO film was suitable properties to use for the front electrode in the display or solar cell.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.49-53
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• 2009

The chemical properties of SiOC film was studied for inter-layer insulator. SiOC film was formed with non polarity due to the appropriate union by the alkyl and hydroxyl group. An amorphous structure of non polarity can induce the low dielectric constant materials. The chemical properties of thin film can define the bonding structure owing to the ionic variation, and the analysis of chemical properties was researched by the carbon content using the FTIR spectra, and induced the film with non polarity. The electrical properties is the electron flow, and is always not the same as the chemical properties. The electrical properties of SiOC film with various flow rate ratios was analyzed and researched the correlation between the chemical properties. SiOC film showed the increasing of the leakage current after annealing process, and abruptly increased the carbon content at some samples. But the sample with increasing the carbon content decreased the leakage current. It means that the chemical properties is not the same as the electrical properties, and the carbon is related with the variation of the bonding structure, and does not contribute the current flow.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.205-205
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• 2007

The SiOC film of carbon centered system was prepared using bistrimethylsilylmethane and oxygen mixed precursor by the chemical vapor deposition. The chemical properties of the SiOC film were analyzed by the I-V measurement and FTIR spectra. The main bond of 950~1200 cm-1 was composed of the Si-C, Si-O-C and Si-O bonds. The leakage current of the SiOC film increased with the increasing of the carbon content, and the drift of the current was similar to the Si-O-C bond content.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.453-458
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• 2009

SiOC film was deposited by the chemical vapor deposition using BTMSM and oxygen mixed precursor. The characteristic of SiOC film varied with increasing of the gas flow rate ratios. The dielectric constant was obtained by C-V measurement using the structure of metal/SiOC film/Si. The space effect due to the steric hindrance between alkyl group at terminal bond of Si-$CH_3$ made the pores, and increased the thickness. However, the SiOC film due to the lowering of the polarization decreased the thickness and then decreased the dielectric constant. After annealing process, the dielectric constant decreased because of the evaporation of the OH or $H_2O$ sites. The thickness was related to the lowering of the dielectric constant by the reduction of the polarization and the thickness decreased with the decrease of the dielectric constant. The refractive index was in inverse proportion to thickness. The trends of the thickness and refractive index did not change after annealing.

• Journal of information and communication convergence engineering
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• v.9 no.2
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• pp.217-219
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• 2011

As silicon devices shrink and their density increases, the low dielectric constant materials instead of $SiO_2$ film is required. SiOC film as low-k films was deposited by the capacitively coupled plasma chemical vapor deposition and then annealed at $300{\sim}500^{\circ}C$ to find out the properties of the dependence on the temperature and polarity. This study researched the dielectric constant using by the structure of the metal/SiOC film/p-Si, chemical shift, thickness, refractive index and hardness. The trend of reflective index was inverse proportioned the thickness, but the dielectric constant was proportioned it. The dielectric constant decreased with decreasing the thickness and the increment of the refractive index.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.63-67
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• 2005

Pentacene channel OTFT(organic thin film transistor)을 SiOC 절연박막 위에서 film by thermal evaporation 방법을 이용하여 성장시켰다. CVD 방법으로 증착시킨 SiOC 절연막은 조성비에 따라 특성이 달라지므로 절연막 위에서의 펜타센의 화학적 반응을 조사하기 위해서 inorganic-type인 $O_2/(BTMSM\;+\;O_2)$ = 0.5의 비율을 갖는 SiOC 박막을 사용하였다. 팬타센 분자의 말단에서 SiOC 표면에서 Diels-Alder 반응에 의한 이중결합이 깨어지면서 안정된 성장을 하지만 온도가 높아감에 따라 표면에서의 $SN_2$(bimolecular nucleophilic substitution) 반응과 연쇄적인 화학반응에 의해 팬타센의 성장을 방해하는 것으로 나타났다.