• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.539-544
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• 2013

$Ag@SiO_2@SiO_2$(FITC) nanocomposites were prepared by the simple polyol process and St$\ddot{o}$ber method. Fluorescence enhancement of fluorescein moiety (fluorescein isothiocyanate, FITC) was investigated in the presence of silver nanoparticles in $Ag@SiO_2@SiO_2$(FITC) system with varying thickness (X nm) of first silica shell. Maximum enhancement factor of 4.3 fold was achieved in $Ag@SiO_2@SiO_2$(FITC) structure with the first silica shell thickness of 8 nm and the average separation distance of 11 nm between the surface of silver nanoparticle and fluorescein moiety. The enhancement is believed to be originated from increased excitation rate of fluorescein moiety due to concentrated local electromagnetic field which was improved by interaction of light with silver nanoparticles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.233-239
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• 2002

Reflection properties of $SiO_2$/ITO (Indium Tin Oxide) thin films coated for electromagnetic shielding, anti-static and anti-reflection on the front surface in CRT were studied. The behavior of reflectance as a function of thickness of $SiO_2$/ITO was investigated and applied to theoretical anti0reflection model of double layers and three layers. As the thickness of ITO layer increased, the deviation from theoretical value increased because uniformity of film deteriorated by pore. Because of the effect of mixed layer of $SiO_2$ and ITO, experimental reflectance showed better acceptance to the three layer antireflection model of $SiO_2$/$SiO_2$+ITO/ITO than the two layer model. Based on the theoretical antireflection design, the double layer whose thickness of $SiO_2$ and ITO were 90, 65 nm, respectively appear 2.5% in reflectance at standard wavelength, 550 nm. This phenomenon was similar to theoretical reflectance in visual range.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1044-1050
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• 2000

ZnO-Pr$_{6}$O$_{11}$-Co$_3$O$_4$-CaO 사성분계에 SiO$_2$를 0.4at%까지 첨가하여 1180, 1200 및 125$0^{\circ}C$에서 소성하여 미세구조 및 전기적인 특성을 조사하였다. 소성온도 120$0^{\circ}C$ 이상에서 치밀한 시편을 얻을 수 있었고, Si는 주로 입계에 분포하고 있으며, SiO$_2$첨가는 결정립성장을 억제하였다. 이 현상은 고상소결만이 일어나 120$0^{\circ}C$에서 소결된 시편과 액상소결이 일어난 125$0^{\circ}C$에서 소결된 시편 모두에서 관찰되었으며, SiO$_2$첨가에 의한 기공의 증가에 기인하는 것으로 판단된다. SiO$_2$의 첨가에 의해 바리스터의 비선형계수가 크게 변화하였으며, 시편의 소성과정이 고상소결인 경우 비선형계수가 증가한 반면 액상소결인 경우에는 감소하였다. 적절한 양의 SiO$_2$(약 0.3at%)를 첨가하여 액상이 형성되지 않는 120$0^{\circ}C$에서 소성하여 80 이상의 비선형계수를 갖는 바리스터를 제조할 수 있었다.

• Journal of the Korean Ceramic Society
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• v.26 no.6
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• pp.747-754
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• 1989

The effects of CuO and SiO2 on the sintered density, grain growth and magnetic properties of Sr-ferrite were investigated. The sintered density of Sr-ferrite is increased with increasing the amount of CuO or SiO2 addition. The grain of Sr-ferrite grow uniformly with the addition of CuO, so remanence increases and coercivity decreases. The addition of SiO2 increase coercivity but does not affect remanence prominently. The sintering temperature above 125$0^{\circ}C$ and SiO2 addition above 0.8wt% causes abnormal grain growth in Sr-ferrite. When CuO and SiO2 are added simultaneouly, remanence does not decrease but coercivity shows low value.

• Journal of the Korean Ceramic Society
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• v.32 no.9
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• pp.1033-1039
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• 1995

The current experiment has quantitatively investigated the effect of the content of CaO and SiO2 on the microstructure, density, electrical resistivity, power loss and initial permeability of manganese zinc ferrites. The density increased initially with CaO and SiO2 content and the further addition showed an adverse effect. The excess addition of CaO and SiO2 developed a discontinuous grain growth with numerous pores inside grains and lowered the electrical resistivity. The initial permeability decreased with increasing the content of SiO2. The samples with relatively low power loss showed that half of the total loss at 10$0^{\circ}C$, 100 kHz and 2000 Gauss was due to the eddy current loss.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.250-250
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• 2011

Pulsed DC magnetron sputter 진공 웹코팅 연속증착기를 사용하여 PET 또는 PEN 기판 위에 Al2O3 가스 배리어 박막을 형성 하였다. 주사전자현미경 측정으로 표면을 분석하였고, PERMATRAN-W3/33을 사용하여 투습률 값을 결정하였다. PEN과 PET 기판위의 가스 배리어 막 모두 O2 분압이 증가 할수록 투습률이 증가하였다. O2 분압이 증가함에 따라 결정립들 사이에 크랙이 발생하여 투습률값에 영향을 미치는 것을 확인하였다. PET 보다 PEN 기판위에 증착막이 더 O2분압이 증가할수록 크랙이 증가하였다. PET 위에 SiO2, SiOC 및 SiON 박막을 증착하여 SiO2는 두께에 따른 변화를 SiOC와 SiON는 부분압의 변화에 따른 투습률값과 투과도값을 측정하였다. SiO2 박막 두께가 500 nm일 때 최소의 투습률인 6.63 g/m2/day를 얻었고, SiO2 박막 두께가 $1{\mu}m$ 일 때 투습률값이 9.46 g/m2/day로 증가하였다. 투과도값은 두께가 증가할수록 감소하는 것을 보였다. 이러한 결과는 투습률값이 두께 변화에 따른 영향보다 표면의 결정립들의 영향에 더 민감함을 알 수 있었다. 부분압이 $6.6{\times}10^{-4}Torr$일 때 SiOC와 SiON의 최소의 투습률이 각각 7.85 g/m2/day 이고 8.1 g/m2/day 이며 SiOC 박막의 투습률 보다 작았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.166-166
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• 2013

Mesoporous $SiO_2$-supported Ni catalysts (Ni/$SiO_2$ and Ni/$TiO_2$/$SiO_2$) were fabricated by atomic layer deposition (ALD), and their catalytic activity and stability were investigated in carbon dioxide reforming of methane (CRM) reaction at $800^{\circ}C$ The Ni/$SiO_2$ catalysts showed high stability as a result of confinement of Ni particles with a mean size of ~10 nm within the pores of $SiO_2$ support. Besides, X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) results showed that the Ni nanoparticles were partially buried inside the $SiO_2$ support. The strong interaction between Ni and the $SiO_2$ support could also be advantageous for long-term stability of the catalyst. In case of the Ni/$TiO_2$/$SiO_2$ catalyst, it was found that the catalytic activity of 10 nm-sized Ni nanoparticles was not much influenced by $TiO_2$ addition.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.117-125
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• 1996

The variation of the interfacial and the electrical properties of SiO$_{2}$TiW layers as a function of anneal temperature was extensively investigated. During the deposition of SiO$_{2}$ on TiW chemical bonds such as SiO$_{2}$, TiW, WO$_{3}$, WO$_{2}$ TiO$_{2}$ Ti$_{2}$O$_{5}$ has been created at the SiO$_{2}$/TiW interface. At the anneal temperature of 300$^{\circ}C$, WO$_{3}$ and TiO$_{2}$ bonds started to break due to the reduction phenomena of W and Ti and simultaneously the metallic W and Ti bonds started to create. Above 500$^{\circ}C$, a part of Si-O bonds was broken and consequently Ti/W silicide was formed. Form the current-voltage characteristics of Al/Sico$_{2}$(220$\AA$)/TiW antifuse structure, it was found that the breakdown voltage of antifuse device wzas decreased with increasing annealing temperature for SiO$_{2}$(220$\AA$)/TiW layer. When r, the insulating property of antifuse device of the deterioration of intermetallic SiO$_{2}$ film, caused by the influw of Ti and W.W.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.8
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• pp.14-18
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• 2018

Generally. the Ohmic's law is an important factor to increase the conductivity in a micro device. So it is also known that the Ohmic contact in a semiconductor device is import. The PN junction as a structure of semiconductor involves the depletion layer, and this depletion layer induces the non linear electrical properties and also makes the Schottky contact as an intrinsic characteristics of semiconductor. To research the conduction effect of insulators in the semiconductor device, $SiO_2$ thin film and $V_2O_5/SiO_2$ thin film were researched by using the current-voltage system. In the nano electro-magnetic system, the $SiO_2$ thin film as a insulator had the non linear Schottky contact, and the as deposited $V_2O_5$ thin film had the linear Ohmic contact owing to the $SiO_2$ thin film with superior insulator's properties, which decreases the leakage current. In the positive voltage, the capacitance of $SiO_2$ thin film was very low, but that of $V_2O_5$ thin film increased with increasing the voltage. In the normal electric field system, it was confirmed that the conductivity of $V_2O_5$ thin film was increased by the effect of $SiO_2$ thin film. It was confirmed that the Schottky contact of semiconductors enhanced the performance of electrical properties to increased the conductivity.