• Korean Journal of Materials Research
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• v.28 no.12
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• pp.758-762
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• 2018

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide($SiO_2$) thin film transistor generally depend on the electrical properties of gate insulators. $SiO_2$ thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of $SiO_2$(25 sccm) decreases more than that of $SiO_2$(30 sccm), and then the generation of electrons decreases and the conductivity of $SiO_2$(25 sccm) is low. Relatively, the conductivity of $SiO_2$(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of $SiO_2$(25 sccm) is superior to that of $SiO_2$(30 sccm) because of the high potential barrier of $SiO_2$(25 sccm). The $ZTO/SiO_2$ transistors are prepared to research the $CO_2$ gas sensitivity. The stability of the transistor of $ZTO/SiO_2$(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

• Journal of the Korean Ceramic Society
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• v.32 no.1
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• pp.63-70
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• 1995

A crack-free ceramic composite membrane with micropores has been synthesized by the pressurized sol-gel coating technique using the mixed Al2O3-SiO2 sols. The mixed sols were prepared by mixing nanoparticulate SiO2 and boehmite sols. These sols were more stable at lower pH, but very unstable when their copositions were in the range of 50~75mol% of SiO2 at the same pH. The mixed Al2O3-SiO2 membrane prepared from the mixed sol (0.2mol/$\ell$ of solid content and pH=2) containing 40mol% of SiO2 had the mean pore radius of 0.80nm and the specific surface area of 280$m^2$/g. The nitrogen permeability through the coated Al2O3-SiO2 layer was 42$\times$107mol/$m^2$.s.Pa. It was found that the thermal stability of aluminosilicate membranes, even through similar to that of SiO2 membranes, was much improved in comparison with ${\gamma}$-alumina membranes.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.406-412
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• 1997

Al2O3/SiC hybrid-composite has been fabricated by the conventional powder process. The addition of $\alpha$-Al2O3 as seed particles in the transformation of ${\gamma}$-Al2O3 to $\alpha$-Al2O3 provided a homogeneity of the microstructure. The grain growth of Al2O3 are significantly surpressed by the addition of nano-size SiC particles. Dislocation were produced due to the difference of thermal expansion coefficient between Al2O3 and SiC and piled up on SiC particles in Al2O3 matrix, resulting in transgranular fracture. The high fracture strength of the composite was contributed to the grain refinement and the transgranular fracture mode. The addition of SiC platelets to Al2O3/SiC nano-composite decreased the fracture strength, but increased the fracture toughness. Coated SiC platelets with nitrides such as BN and Si3N4 enhanced fracture toughness much more than non-coated SiC platelets by enhancing crack deflection.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1097-1104
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• 2000

MOD(Metal-Organic-Decomposition)법에 의해 $Y_2$O$_3$버퍼층에 Pt/TiO$_2$/SiO$_2$/Si 기판 위에 제조한 후, 그 표면 위에 졸-겔 방법으로 YMnO$_3$박막을 형성하였다. 기판의 종류와 수화조건 변화가 YMnO$_3$박막의 결정화 거동에 미치는 영향을 고찰하였으며, 또한 $Y_2$O$_3$버퍼층 유.무에 따른 Mn의 산화상태를 확인하고 이에 따른 유전특성 변화를 연구하였다. $Y_2$O$_3$버퍼층을 삽입하지 않고 직접 기판 위에 형성한 YMnO$_3$박막의 결정상은 기판의 종류 및 Rw 변화에 관계없이 orthorhombic 구조임이 확인되었다. 반면, $Y_2$O$_3$버퍼층 위에 형성된 YMnO$_3$박막의 경우에는 Rw($H_2O$/alkoxide mole ratio)가 0~6 범위 내에서 낮아질술고 hexagonal 결정상 성장에 유리하였으며, 또한 Pt(111)/TiO$_2$/SiO$_2$/Si 기판이 Ptd(200)/TiO$_2$/SiO$_2$/Si에 비하여 결정상 형성에 용이하였다. $Y_2$O$_3$버퍼층은 YMnO$_3$결정상 내에서 $Mn^{4+}$ 이온형성을 억제함으로써 누설전류밀도가 크게 감소되는 효과를 주었으며, 동시에 강유전 특성을 지닌 hexagonal 결정상 형성에 유리하게 작용하였다. 결론적으로, $Y_2$O$_3$는 Pt가 코팅된 Si 기판 위에 YMnO$_3$박막 제조시 그 강유전 특성을 향상시켜주는 우수한 버퍼층 재료임을 확인하였다.

• Journal of the Korean Ceramic Society
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• v.48 no.6
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• pp.559-564
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• 2011

In order to investigate the behavior of $SiO_2$ in the molybdenum silicide powders, crystal structure of these powders was measured by XRD, in addition, surface composition and surface phase (or chemical states) and microstructure were analysed by XPS and TEM, respectively. Mo-silicide powders containing $SiO_2$ were synthesized by SHS (Self-Propagating High-Temperature Synthesis) technique. In XRD result, according to increase of $SiO_2$ contents, the crystal structure for synthesized $MoSi_2$ powders was still typical $MoSi_2$ bct without any other phases. By XPS analysis, the surface of Mo and Si source powders was covered with $MoO_3$ and $SiO_2$, respectively, and the surface of synthesized $MoSi_2$ powder was also covered with $MoO_3$ and $SiO_2$, which were stable oxides at room temperature. However, according to increase of $SiO_2$ addition, $MoSi_2$ phase in XPS spectra decreased and $SiO_2$ phase increased relatively in synthesized $MoSi_2$ powders. From the results by XPS and XRD, we found that the existent $SiO_2$ has amorphous structure. In the microstructure, the small particulates of the synthesized products added $SiO_2$ agglomerated together to form larger clusters (from ~10 nm to ~1 ${\mu}m$). From TEM, XPS, and XRD results, we found that the out layer of agglomeration of synthesized $MoSi_2$ powder is surrounded by amorphous $SiO_2$.

• Journal of Adhesion and Interface
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• v.7 no.4
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• pp.32-38
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• 2006

A series of organic-inorganic hybrids, PCL/EP/$SiO_2$, involving epoxy resin and triethoxysilane-terminated polycaprolactone elastomer (PCL-TESi) were prepared via polymerization of diglycidyl ether of bisphenol A (DGEBA) with amine curing agent KB-2 and sol-gel process of PCL-TESi. The curing reactions were started from the initially homogeneous mixture of DGEBA, KB-2 and the PCL-TESi. The organicinorganic hybrids containing up to 4.95% (wt) of $SiO_2$ were obtained and characterized by FT-IR, transmission electron microscopy (TEM), differential scanning calorimetry (DSC) and thermogravimetry analysis (TGA). It was experimentally shown that the swelling property in toluene, morphologies and thermal properties of the resulting hybrids were quite dependent on the contents of $SiO_2$. The crosslink network density decreases with increasing of the PCL-TESi. And in TEM, the phase separated morphology of these hybrids was found, which resulted from the coagulation of Si-O-Si networks resulting from $-Si(OC_2H_5)_3$ of PCL-TESi self-curing by hydrolytic silanol condensation, with the advancement of the curing reaction in the modified epoxy resin systems. Meanwhile, the change of the $SiO_2$ content made the morphologies changed from aggregated particles of Si-O-Si in the hybrid to nanocluster of interconnected Si-O-Si particles, then to aggregated Si-O-Si dispersing in the continuous cured epoxy phase again, and last to co-continuous interpenetrating network. The glass transition behavior of the hybrid material was cooperative motion of large chain segments, which were hindered by the inorganic Si-O-Si network. And in TG analysis, the characteristic temperature at 5% of weight loss was evidently increased from $120.5^{\circ}C$ of pure cured epoxy to $277.6^{\circ}C$ of 3.84% (wt) of $SiO_2$ modified epoxy due to the existence of Si-O-Si when PCL-TESi was added in the hybrid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.128-129
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• 2008

The annealing effects of $SiO_2/Si_3N_4$ stacked tunneling dielectrics were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_3N_4/SiO_2/Si_3N_4$(NON), $SiO_2/Si_3N_4/SiO_2$(ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS(Metal-Oxide-Semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field and improved electrical characteristics by annealing processes than $SiO_2$ layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.658-664
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• 1997

The effect of metal oxides($K_2O, MgO, CaO,Al_2O_3$, and $TiO_2$) on the kinds of pure $SiO_2$ phase, and $SiO_2$ phases in the composition of vitreous porcelain body was investigated. Also, the effect of the ratio $SiO_2$ to $Al_2O_3$ in the composition of porcelain body with stabilized of cristobalite phase was investigated. In the case of the addition of $K_2O, MgO, CaO, Al_2O_3$, and $TiO_2$ to pure $SiO_2$, the major phase was $\alpha$-cristobalite, $\alpha$-cristobalite, $\alpha$-quartz, $\alpha$-quartz and amorphous, respectively. As the ratio of $SiO_2$ to $Al_2O_3$ in the composition of porcelain body was decreased, the stabilization of cristobalite phase was promoted and only the critical value of $SiO_2/Al_2O_3$ ratio that stabilizing the cristobalite phase in it was 68.10/22.75. The addition of $K_2$O, MgO, CaO,Al_2O_3$, and $TiO_2$ to the composition of porcelain body stabilized already did not affect on the formation of $\alpha$-cristobalite phase which degraded the thermal properties of porcelain body, and suppressed the formation of a, $\beta$-cristobalite.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.130-137
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• 2008

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.6
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• pp.277-281
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• 2009

Superhydrophobic $SiO_2$ thin films were successfully fabricated on a glass substrate by sol-gel method. To fabricate $SiO_2$ thin film with a high roughness, $SiO_2$ nano particles were added into tetraethoxysilane (TEOS) solution. The prepared $SiO_2$ thin film without an addition of $SiO_2$ nano particles showed a very flat surface with ca. 1.27 nm of root mean square (RMS) roughness. Otherwise, the $SiO_2$ thin films fabricated by using coating solutions added $SiO_2$ nano particles of 1.0, 2.0 and 3.0 wt% showed a RMS roughness of ca. 44.10 nm, ca. 69.58 nm, ca. 80.66 nm, respectively. To modify the surfaces of $SiO_2$ thin films to hydrophobic surface, a hydrophobic treatment was carried out using a fluoroalkyltrimethoxysilane (FAS). The $SiO_2$ thin films with a high rough surface were changed from hydrophilic to hydrophobic surface after the FAS treatment. Especially, the prepared $SiO_2$ thin film with a RMS roughness of 80.66 nm showed a water contact angle of $163^{\circ}$.