Room temperature deposition of SiN at low radio frequency source power, $SiH_4-N_2$ plasma using pulsed-PECVD
(Pulsed-PECVD를 이용한 SiN 박막의 저 소스전력 $SiH_4-N_2$ 플라즈마에서의 상온 증착)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2010.06a
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- pp.309-309
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- 2010