• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.151-154
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• 2003

AlN/Al/SiO$_2$/Si thin films for application to FBAR(Film Bulk Acoustic Resonator) devices were prepared by FTS(Facing Targets sputtering system) apparatus which provides a stable discharge at low gas pressures and can deposit high quality thin films because of the substrate located apart from the plasma. The AlN thin films were deposited on a $SiO_2(1{\mu}m)/Si(100)$ substrate using an Al bottom electrode. The process parameters were fixed such as sputering power of 200W, working pressures of 1mTorr and AlN thin film thickness of 800nm, respectively and crytallographic characteristics of AlN thin films were investigated as a function of $N_2$ gas flow rate$[N_2/(N_2+Ar)]$. Thickness of AlN thin films were measured by $\alpha$-step, the crystallographic characteristics and c-axis preferred orientation were evaluated by XRD.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.625-626
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• 2013

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.159-163
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• 2001

Si3N4 powder has been analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The sample was dissolved by high-pressure acid digestion with HF, H2SO4 (1+1), and HNO3 mix ture. This technique is well suited for the impurity analysis of Si3N4 because the matrix interference is eliminated. A round-robin samples trace elements, such as Ca, W, Co, Al, Fe, Mg, and Na, were determined. For the direct analysis, slurry nebulization of 0.96 mm Si3N4 powder also has been studied by ICP-AES. Emission intensities of Fe were measured as ICP operational conditions were changed. Significant signal difference between slurry particles and aqueous solution was observed in the present experiment. Analytical results of slurry injection and high-pressure acid digestion were compared. For the use of aqueous standard solution for calibration, k-factor was determined to be 1.71 for further application.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.729-732
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• 2006

The effect of stress match between silicon nitride ($SiN_2$) and hydrogenated amorphous silicon (a-Si:H) layers on the electrical characteristics of thin-film transistors (TFTs) has been investigated. The result shows that modifying the deposition conditions of a Si:H and $SiN_2$ thin films can reduce the stress mismatch at a-Si:H/SiNx interface. Moreover, for best a-Si:H TFT characteristics, the internal stress of gate $SiN_2$ layer with slightly nitrogen-rich should be matched with that of a-Si:H channel layer. The ON current, field-effect mobility, and stability of TFTs can be enhanced by controlling the stress match between a-Si:H and gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a-Si:H and SiNx layer, and the good dielectric quality of the bottom nitride layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.7
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• pp.662-666
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• 2005

Silicon nitride $(SiN_x)$ film is a promising material for anti-reflection coating and passivation of multicrystalline silicon (me-Si) solar cells. In this work, a plasma-enhanced chemical vapor deposition (PECVD) system with batch-type reactor tube was used to prepare highly robust $SiN_x$ films for screen-printed mc-Si solar cells. The Gas flow ratio, $R=[SiH_4]/[NH_3]$, in a mixture of silane and ammonia was varied in the range of 0.0910.235 while maintaining the total flow rate of the process gases to 4,200 sccm. The refractive index of the $SiN_x$ film deposited with a gas flow ratio of 0.091 was measured to be 2.03 and increased to 2.37 as the gas flow ratio increased to 0.235. The highest efficiency of the cell was $14.99\%$ when the flow rate of $SiH_4$ was 350 sccm (R=0.091). Generally, we observed that the efficiency of the mc-Si solar cell decreased with increasing R. From the analysis of the reflectance and the quantum efficiency of the cell, the decrease in the efficiency was shown to originate mainly from an increase in the surface reflectance for a high flow rate of $SiH_4$ during the deposition of $SiN_x$ films.

• Journal of the Korean Ceramic Society
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• v.39 no.8
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• pp.789-794
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• 2002

In this study, nano-sized Si-C-N precursor powders were synthesized by Chemical Vapor Condensation Method(CVC) using TMS(Tetramethylsilane: $Si(CH_3)_4$), $NH_3$ and $H_2$ gases under the various reaction conditions of the reaction temperature, TMS/$NH_3$ ratio and TMS/$H_2$ ratio. XRD and FESEM were used to analysis the crystalline phase and the average particle size of the synthesized powders. It was found that the obtained powders under the considering conditions were all spherical amorphous powder with the particle size of 87∼130 nm. The particle size was decreased as the reaction temperature increased and TMS/$NH_3$ and TMS/$H_2$ ratio decreased. As the results of EA analysis, it was found that the synthesized powders had been formed the powders composed of Si, N, C and H. Through FT-IR results, it was found that the synthesized powders were Si-C-N precursor powders with Si-C, Si-N and C-N bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.275.2-275.2
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• 2014

현재 자동차 분야에서 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 Polycarbonate(PC)로 대체하고자 하는 연구가 이루어지고 있다. 하지만, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 문제점으로 지적되고 있으며, 에너지 소비 저감을 위하여 적외선 영역 반사율(reflectance)이 높은 저방사(low emissivity) 특성이 요구되고 있다. 본 연구에서는, ICP-assisted reactive magnetron sputtering 장비를 이용하여 투과율(transmittance)이 확보되고, 고경도 특성을 갖는 Al-Si-N와 300 nm 파장 이하의 자외선 차단 특성이 있는 SiN:H 그리고 저방사 특성을 위해 Al을 증착하였고, 박막의 증착 순서는 SiN:H 박막을 가장 아래에 증착하고 그 위에 Al/Al-Si-N 박막을 다층으로 형성하였다. 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS(X-ray Photoelectron Spectroscopy), XRD (X-ray Diffraction)를 이용하여 분석하였다. Knoop ${\mu}$-hardness tester와 Taber tester를 이용하여 경도 및 내마모 특성을 분석하였다. 제작된 샘플의 Al-Si-N 박막 경도는 Si 비율에 따라 다른 경도 특성을 갖는데, 실제 Si/(Al+Si) 비율이 24%에서 최대 31 GPa의 경도 값을 갖는 것을 확인하였다. UV-Vis Spectrometer를 이용하여 250 nm~700 nm 파장의 투과율을 측정하였고, 자외선 영역의 경우 SiN:H 박막에 의해 300 nm 이하의 파장에서 2% 이하의 투과율을 확인하였다. 그리고 FT-IR(Fourier Transform Infrared Spectroscopy)를 이용하여 $2.5{\mu}m{\sim}15{\mu}m$ 파장의 반사율을 이용하여 방사율을 측정하였는데, 3*(Al/Al-Si-N) 구조의 다층 박막의 경우 방사율은 0.27로 측정되었다.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Journal of the Korean Ceramic Society
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• v.28 no.3
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• pp.189-196
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• 1991

Si(OC2H5)4, commercial AlN and Y2O3 powder were used as the precusor of Si3N4, AlN, Y2O3, respectively. After Si3N4 powder was synthesized by carbothermal reduction and nitridation at 135$0^{\circ}C$ for 13h in N2 atmosphere, characteristics of synthesized powder and the ceramics sintered at 178$0^{\circ}C$ for 1h under 30MPa were investigated. In order to evaluate the reliability of sintered body, Weibull modulus was investigated. Premixing of carbon black as a reduction agent had no effect on Si(OH)4 formation, and Si3N4 powder synthesized from Si(OC2H5)4 was $\alpha$-Si3N4 single phase. Mechanical properties of sintered body were measured as follows : flexural strength ; 750MPa, fracture toughness ; 3.71Mn/3/2, hardness : 17.4GPa, thermal shock resistence temperature ; $600^{\circ}C$. Flexural strength at room temperature was 750MPa and was retained up to 110$0^{\circ}C$. The Weibull modulus of sintered body was 10.7.