• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.468-473
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at $150^{\circ}C∼600^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1 ∼ 1.5 MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Meta1/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectric.

• Journal of the Korean Ceramic Society
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• v.38 no.12
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• pp.1150-1154
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• 2001

Silicon oxynitride (SiON) thick films using the core layer of silica optical waveguide have been deposited on Si wafer by PECVD at low temperature (32$0^{\circ}C$) were obtained by decomposition of appropriate mixture of (SiH$_4$+$N_2$O+$N_2$) gaseous mixtures under RF power and SiH$_4$/($N_2$O+$N_2$) ratio deposition condition. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4663 to 1.5496. A high SiH$_4$/($N_2$O+$N_2$) of 0.33 and deposition power of 150 W leads to deposition rates of up to 8.67 ${\mu}{\textrm}{m}$/h. With decreasing SiH$_4$/($N_2$O+$N_2$) ratio, the SiON layer become smooth from 41$\AA$ to 6$\AA$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.501-504
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• 2003

In this paper, for enhancement of property on a-Si:H TFTs We measure interface characteristics of ferroelectrics thin film and a-Si:H thin film. First, SrTiO$_3$ thin film is deposited bye-beam evaporation. Deposited films are annealed for 1 hour in N2 ambient at 150$^{\circ}C$ ∼ 600$^{\circ}C$. Dielectric characteristics of deposited SrTiO$_3$ films are very good because dielectric constant shows 50∼100 and breakdown electric field are 1∼1.5MV/cm. a-SiN:H,a-Si:H(n-type a-Si:H) are deposited onto SrTiO$_3$ film to make MFNS(Metal/ferroelectric/a-SiN:H/a-Si:H) by PECVD. After the C-V measurement for interface characteristics, MFNS structure shows no difference with MNS(Metal/a-SiN:H/a-Si:H) structure in C-V characteristics but the insulator capacitance value of MFNS structure is much higher than the MNS because of high dielectric constant of ferroelectrics.

• Journal of Sensor Science and Technology
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• v.1 no.1
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• pp.5-12
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• 1992

We have fabricated a-Si:H multilayer for contact-type linear image sensor by means of RF glow discharge decomposition method. The ITO/i-a-Si:H/Al structure has relatively high dark current due to indium diffusion and carrier injection from both electrodes, resulting in low photocurrent to dark current. To suppress the dark current and to enhance interface electric field between ITO and i-a-Si:H film we have fabricated ITO/insulator/i-a-S:H/p-a-S:H/Al multilayer film with blocking structure. The photocurrent of ITO/$SiO_{2}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al multilayer sensor with 5V bias voltage became saturated at about 20nA under $20{\mu}W/cm^{2}$ light intensity, while the dark current was less than 0.1nA. To increase the light generation efficiency we have adopted ITO/$SiO_{x}N_{y}(300{\AA})$/i-a-Si:H/p-a-Si:H($1500{\AA}$)/Al structure, showing photocurrent of 30nA and dark current of 0.08nA with 5V bias voltage. Also the spectral photosensitivity of the multilayer was enhanced for short wavelength visible region of 560nm, compared with that of the a-Si:H monolayer of 630nm. And its photoresponse time was about 0.3msec with the film homogeneity of 5% deviation.

• Journal of the Korean Ceramic Society
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• v.24 no.1
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• pp.23-32
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• 1987

Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

• Journal of the Korean Institute of Telematics and Electronics
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• v.19 no.6
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• pp.52-54
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• 1982

p·Si-전해질 접합을 전해질로 6N H2SO4, 6N H2SO4(Ti3+), 6N H2SO4(Ti4+), 6N H2SO4(Ti4+/Ti3+)을 사용하여 만들었다. 이들 전해질중 6N H2SO4(Ti4-/Ti3+)을 사용할 때 p·Si 광음극이 안정하게 동학하며 높은 광전 감도를 가지고 있었다. p·Si-electrolyte junction are prepared by using p·Si photocatode in four different electrolytes such as 6N H2SO4, 6N H2SO4(Ti3+), 6N H2SO4(Ti4+), 6N H2SO4(Ti4+/Ti3+) respectively. Among those electrolytes 6N H2SO4(Ti4-/Ti3+) shows very good results, in which p·Si photocathode is stable.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.190.1-190.1
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• 2013

현재 자동차 분야에서 차량 경량화를 통해 연비 향상 및 에너지 효율 향상을 기대하고 있으며, 차량 경량화의 한 수단으로 자동차용 유리를 고강도 투명 플라스틱 소재인 PC(Polycarbonate)로 대체하고자 하는 연구가 활발히 이루어지고 있다. 그러나, PC의 낮은 내마모 특성과 자외선에 의한 열화 및 변색 현상은 해결하여야 할 중요한 문제점으로 지적되고 있다. 본 연구에서는, PC의 내마모 특성을 향상시키기 위하여 transmittance가 확보되고, 고경도 특성을 갖는 Al-Si-N 박막 증착에 대한 연구를 하였고, 자외선 차단을 위하여 SiN:H 박막을 증착 하였다. 박막 증착을 위하여 ICP-assisted reactive magnetron sputtering 장비를 이용하였으며, 고경도 특성을 갖는 Al-Si-N 박막을 제조하였다. 그리고 300 nm 파장 이하의 자외선 차단을 위하여 SiN:H 박막을 증착하였다. 분석 장비로는 박막의 chemical state와 crystallinity를 확인하기 위하여 XPS(X-ray Photoelectron Spectroscopy), XRD(X-ray diffraction)를 이용하여 분석을 수행하였으며, Knoop ${\mu}$-hardness tester와 Pin-on-disk를 이용하여 경도 및 내마모 특성을 평가하였다. SiN:H 박막 위에 Al-Si-N 박막을 증착하였고 총 두께는 ~5000 $\AA$을 증착하였으며, 가시광 영역에서 평균 70% 이상의 transmittance를 나타내었다. 박막의 Si/(Al+Si) 비율에 따라 다른 경도 특성을 나타냈는데, Si/(Al+Si) 비율이 26~32% 부근에서 최대 31 GPa의 경도 값을 확인하였고 SiN:H 박막은 300nm 이하의 파장에서 2% 이하의 transmittance를 확인하였다.

• Journal of Sensor Science and Technology
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• v.2 no.1
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• pp.95-99
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• 1993

a-Si : H TFTs for image sensor have been fabricated and their operational characteristics have been investigated. Hydrogenated amorphous silicon nitride(a-SiN : H) films were used for the gate insulator and $n^{+}$-a-Si : H films were depostied for the source and drain contact. The thicknesses of a-SiN : H and a-Si : H films were $2000{\AA}$, respectively and the thickness of $n^{+}$-a-Si : H film was $500{\AA}$. Also the channel length and channel width of a-Si : H TFTs were $50{\mu}m$ and $1000{\mu}m$, respectively. The ON/OFF current ratio, threshold voltage, and field effect mobility of fabricated a-Si : H TFTs were $10^{5}$, 6.3 V, and $0.15cm^{2}/V{\cdot}s$, respectively.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1037-1041
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• 2001

Silicon diosixde thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition (PECVD) method, at a low temperature (32$0^{\circ}C$) and from (SiH$_4$+$N_2$O) gas mixtures. The effects of deposition parameters on properties of SiO$_2$thick films were investigated by variation of $N_2$O/SiH$_4$flow ratio and RF power. As the $N_2$O/SiH$_4$flow ratio decreased, deposition rate increased from 2.9${\mu}{\textrm}{m}$/h to maximum 10.1${\mu}{\textrm}{m}$/h. As the RF power increased from 60 W to 120 W, deposition rate increased (5.2~6.7 ${\mu}{\textrm}{m}$/h) and refractive index approached at thermally grown silicon dioxide (n=1.46).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.272-275
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• 2005

The high stability of a-Si:H TFTs device is studied with different deposited conditions of $SiN_x$ films by PECVD. The process parameters of $N_2$, $NH_3$ gas flow rate, RF power, and pressure s of hydrogenated amorphous silicon nitride are taken into account and analyzed by Taguchi experimental design method. The $NH_3$ gas flow rate and RF power are two major factors on the average threshold voltage and the a-SiNx:H film's structure. The hydrogen contents in $SiN_x$ films were measured by FTIR using the related Si-H/N-H bonds ratio in $a-SiN_x:H$ films. After the 330,000 sec gate bias stress is applied, the threshold voltages ($V_th$) shift less than 10%. This result indicates that the highly stable a-Si:H TFTs device can be fabricated with optimum gate $SiN_x$ insulator.