• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.173-176
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• 2004

In this study we investigated post ELA(Excimer Laser Annealing) effect on SMC (Silicide Mediated Crystalization) poly-Si (Polycrystalline Silicon) to improve the characteristics of poly-Si. Combining SMC and XeCl ELA were used to crystallize the a-Si (amorphous Silicon) at various ELA energy density for LTPS (Low Temperature Polycrystalline Silicon). We fabricated the conventional SMC poly-Si with no SPC (Solid Phase Crystallization) phase using UV heating method[1] and irradiated excimer laser on SMC poly-Si, so called SMC-ELA poly-Si. After using post ELA we can get better surface morphology than conventional ELA poly-Si and enhance characteristics of SMC poly-Si. We also observed the threshold energy density regime in SMC-ELA poly-Si like conventional ELA poly-Si.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.314-317
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• 2000

In order to analyze the characteristics of complicated TFT-LCD (Thin Film Transistor-Liquid Crystal Display) circuits, it is indispensible to use simulation programs. In this study, we present a systematic method of extracting the input parameters of poly-Si TFT for Spice simulation. This method is applied to two different types of poly-Si TFTs fabricated in our group with good results. Among the Spice simulators, Pspice has the graphic user interface feature making the composition of complicated circuits easier. We added successfully a poly-Si TFT model on the Pspice simulator, which would contribute to efficient simulations of poly-Si TFT-LCD pixels and arrays.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• Journal of Acupuncture Research
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• v.25 no.1
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• pp.169-178
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• 2008

Objectives : Dong-si acupuncture therapy is being widely used because of good clinical result. The purpose of this study was to compare the location and efficacy of Dong-si acupoints and 14 meridian acupoints. Conclusions : 1. Dong-si acupoints on the lower extremity total 83. Among them, 16 acupoints are the same as 14 meridian acupoints. 2. Between the same location points, the efficacy of each Dong-si acupoints is similar to that of each of the 14 meridian acupoints in cases of musculoskeletal pain diseases, paralytic diseases, urogenital diseases, and gastrointestinal diseases. 3. Dr. Dong studied deeply into the 14 meridian acupoints and created Dong-si acupuncture therapy. He said that the distribution of acupuncture points was closely related to the 14 meridians. 4. I think that we are able to apply Dong-si acupuncture therapy to clinical use widely by comprehending the character of the 14 meridian acupoints and each meridians.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.59-65
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• 1997

Efficient Si(100) etching by thermal H atoms at low substrate temperatures has been achieved. Gas-phase etching product $SiH_4$(g) upon H atom bombardment resulting from direct abstraction of $SiH_3$(a) by impinging H atoms was detected with a quadrupole mass spectrometer over the substrate temperature range of 105-408 K Facile depletion of all surface silyl ($SiH_3$) groups the dissociative adsorption product of disilane ($Si_2H_6$) at 105K from Si(100)2$\times$1 by D atoms and continuous regeneration and removal of $SiD_3$(a) were all consumed. These results provide direct evidence for efficient silicon surface etching by thermal hydrogen bombardment at cryogenic temperatures as low as 105K We attribute the high etching efficiency to the formation and stability of $SiH_3$(a) on Si(100) at lowered surface temperatures allowing the $SiH_3$(a) abstraction reaction by additional H atom to produce $SiH_4$((g).

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1019-1022
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• 2004

High performance p-ch poly-Si TFTs with excellent stability were developed. By using a frequency doubled DPSS CW laser, the a-Si on glass could be crystallized into one dimensional single crystalline silicon named as a sequential lateral crystallization (SLC) region. We fabricated p-ch TFTs on SLC region and the typical characteristic values of the TFTs were $u_{fe}$ = 180 $cm^2$/Vs, $V_{th}$ = -3 V, S.S. = 0.5 V/dec, and $I_{off}$ = 1 pA/um@ $V_d$ = -10V. It is found that the TFTs are very stable after bias stresses such as negative and positive gate biases, hot carrier bias and high current bias. These results indicate that the poly-Si in SLC region is suitable for system on glass (SOG) application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.128-129
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• 2005

In this research, non-volatile memory effects and nano-crystal creation have been investigated in SiNx containing Si nano-crystals (Si-nc) produced by ICP-CVD and rapid thermal annealing. The quantum dots were created during rapid thermal annealing of Si-rich SiNx thin films. The quantum dot creation was analyzed with photoluminescence spectra, and in case of Si-rich SiNx, it is conformed that the quantum dots are formed easily at 750$\sim$800nm wavelength.

• Journal of Acupuncture Research
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• v.30 no.1
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• pp.13-22
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• 2013

Objectives : The aim of this study was to show the application to add the Dong-Qi therapy of the Dong-Si acupuncture to exercise therapy of the movement system impairment syndrome(MSIS) and to determine the best acupuncture point for the Dong-Qi therapy. Methods : We reviewed Diagnosis and Treatment of Movement Impairment Syndrome and Movement System Impairment Syndromes Of The Extremities, Cervical and Thoracic Spines written by Sahrmann SA. to show the exercise therapy of the sort of MSIS. We reviewed complete works of Yang Wei Jie to show the acupuncture points of the Dong-Si acupuncture and the Dong-Qi therapy. Results : We showed the acupuncture point of the Dong-Si acupuncture by each type of MSIS based on the reference book of MSIS, the Dong-Si acupuncture. Also, we selected and tabulated the best possible acupuncture point of the Dong-Si acupuncture which could minimize a side effect of acupuncture during the therapeutic exercise by each type of MSIS. Conclusion : A specific acupuncture point of the Dong-Si acupuncture could be chosen for a specific MSIS therapeutic exercise. The best possible acupuncture point could be chosen when selecting an acupuncture point of the Dong-Si acupuncture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.546-549
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• 2003

This paper was shown removal characteristic of escherichia coli for discharge tube with globular $SiO_2$. At the result of the removal characteristic experiments of escherichia coli using the discharge tube with globular $SiO_2$, because the electric field is also increased when input voltage is increased, the removal characteristic of escherichia coli was appeared relation connection to input voltage. If a passing number of test water in discharge tube is increased, the removal ratio of escherichia coli is increased because passing number of electric field section is increased. When diameter of globular $SiO_2$ is increased, the removal time of escherichia coli is to be decreased because dielectric polalization of globular dielectric($SiO_2$), Also, the removal ratio of escherichia coli of the discharge tube with globular dielectric($SiO_2$) is appeared higher than the removal ratio of the discharge tube without globular dielectric($SiO_2$).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.1
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• pp.20-28
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• 2003

In this paper, we present results of the comparative analysis of the flicker phenomena in the poly-Si TFT-LCD and a-Si:H TFT-LCD arrays for the development and manufacturing of wide-area and high-quality TFT-LCD displays. We used four different types of TFTs; a-Si:H TFT, excimer laser annealed (ELA) poly-Si TFT, silicide mediated crystallization (SMC) poly-Si TFT, and counter-doped lateral body terminal (LBT), poly-Si TFT. We defined the electrical quantity of the flicker so that we could compare the flickers quantitatively for four different 40" UXGA TFT-LCDs. We identify three factors contributing to the flicker, such as charging time, kickback voltage and leakage current, and analyze how much each of three factors give rise to the flincker in the different TFT-LCD arrays. In addition, we suggest and show that, in the case of the poly-Si TFT-LCD arrays, the low-level (minimum) gate voltages should be carefully chosen to minimize the flicker because of their larger leakage currents compared with a-Si TFT-LCD arrays.