• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.167-169
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• 2009

We have carried out quantitative structure and property analysis of the nanoporous structures of low dielectric constant (low-k) carbon-doped silicon oxide (SiCOH) films, which were deposited with plasma enhanced chemical vapor deposition (PECVD) using vinyltrimethylsilane (VTMS), divinyldimethylsilane (DVDMS), and tetravinylsilane (TVS) as precursor and oxygen as an oxidant gas. We found that the SiCOH film using VTMS only showed well defined spherical nanopores within the film after thermal annealing at $450^{\circ}C$ for 4 h. The average pore radius of the generated nanopores within VTMS SiCOH film was 1.21 nm with narrow size distribution of 0.2. It was noted that thermally labile $C_{x}H_{y}$ phase and Si-$CH_3$ was removed to make nanopore within the film by thermal annealing. Consequently, this induced that decrease of average electron density from 387 to $321\;nm^{-3}$ with increasing annealing temperature up to $450^{\circ}C$ and taking a longer annealing time up to 4 h. However, the other SiCOH films showed featureless scattering profiles irrespective of annealing conditions and the decreases of electron density were smaller than VTMS SiCOH film. Because, with more vinyl groups are introduced in original precursor molecule, films contain more organic phase with less volatile characteristic due to the crosslinking of vinyl groups. Collectively, the presenting findings show that the organosilane containing vinyl group was quite effective to deposit SiCOH/$C_{x}H_{y}$ dual phase films, and post annealing has an important role on generation of pores with the SiCOH film.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2941-2944
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• 2014

The electrical and mechanical properties of the plasma polymerized low dielectric constant SiCOH films were investigated. The SiCOH films were produced with tetrakis(trimethylsilyloxy)silane and cyclohexane as precursors by using a plasma enhanced chemical vapor deposition. When the deposition plasma powers were changed from 10 to 50 W, the relative dielectric constant of the SiCOH film increased from 2.09 to 2.76 and their hardness and elastic modulus were changed from 1.6 to 5.6 GPa and from 16 to 44 GPa, respectively. After thermal annealing at $500^{\circ}C$, the annealed SiCOH films showed relative dielectric constants of 1.80-2.97, a hardness of 0.45-0.6 GPa and an elastic modulus of 6-7 GPa. And then, the chemical structures of as-deposited and annealed SiCOH films were analyzed by using Fourier transform infrared spectroscopy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.146-146
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• 2001

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.148-148
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• 2008

Low-k dielectric materials are an alternative plan to improve the signal propagation delay, crosstalk, dynamic power consumption due to resistance and parasitic capacitance generated the decrease of device size. Now, various materials is studied for the next generation. Diethoxymethlysiliane (DEMS) precursor using this study has two ethoxy groups along with one methyl group attached to the silicon atoms. SiCOH thin films were deposited on p-type Si(100) substrate by Plasma Enhanced Chemical Vapor Deposition (PECVD) using DEMS. In this study, we studied the effect of oxygen($O_2$) flow rate for DEMS to characteristics of thin films. The characteristics of thin films deposited using DEMS and $O_2$ evaluated through refractive index, dielectric constant(k), surface roughness, I-V(MIM:Al / SiCOH / Ag), C-V(MIM), deposition rate.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.41-45
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• 2008

We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.19-23
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• 2009

We have studied dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was introduced with the flow rates from 24 sccm to 32 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. Then, SiOCH thin film deposited at room temperature was annealed at temperature of $400^{\circ}C$ and $500^{\circ}C$ for 30 minutes in vacuum. The vibrational groups of SiOCH thin films were analyzed by FT/IR absorption lines, and the dielectric constant of the low-k SiOCH thin films were obtained by measuring C-V characteristic curves. With the result that FTIR analysis, as BTMSM flow rate increase, relative carbon content of SiOCH thin film increased from 29.5% to 32.2%, and increased by 32.8% in 26 sccm specimen after $500^{\circ}C$ annealing. Dielectric constant was lowest by 2.32 in 26 sccm specimen, and decreased more by 2.05 after $500^{\circ}C$ annealing. Also, leakage current is lowest by $8.7{\times}10^{-9}A/cm^2$ in this specimen. In the result, shift phenomenon of chemical bond appeared in SiOCH thin film that BTMSM flow rate is deposited by 26 sccms, and relative carbon content was highest in this specimen and dielectric constant also was lowest value

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.16-20
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• 2006

In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.169.1-169.1
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.461-461
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• 2010

For a low dielectric constant inter-metal dielectric application, the low-k SiCOH film with a dielectric constant of 2.8-3.2 has been deposited by plasma-enhanced chemical vapor deposition with decamethylcyclopentasiloxane, cyclohexane, and helium which is carrier gas. In this work, we investigated chemical deposition rate, dielectric constant, characterization of plasma polymer films according to temperature(25C-200C) of substrate and change of component concentration. We measured impedance by using V-I prove during process. From experimental result, deposition rate decrease with increasing temperature. Through real time impedance analysis of chamber, we find corelation between film thickness and impedance by assuming equivalent circuit.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.298-298
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• 2006

There has been much interest in incorporating nanoscale voids into dielectric materials in order to reduce their k value, and thus in producing low-k porous interdielectric materials. One approach to the development of low-k dielectric materials is the templated polycondensation of organosilicate precursors in the presence of a thermally labile, organic polymeric porogen. The other is SiOCH films have low dielectric constant as well as good mechanical strength and high thermal stability through PECVD. In this article we explore the nanopore generation mechanism of organosilicate film using star-shape porogen and SiOCH film using bis-trimethylsilylmethane (BTMSM) precursor.