• 한국세라믹학회지
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• 제29권8호
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• pp.617-622
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• 1992

In order to study on the effect of SiC whisker in flexural strength characterization of macro defect-free (MDF) cement composites, which composed of high alumina cement and polyvinyl alcohol, microstructural characterization of the composite specimens fabricated by the addition of SiC whiskers was investigated. Microproes are created around the SiC whisker, MDF cement didn't react with the SiC whisker. However, flexural strength of the composites have been improved. Fracture morphology of the composites, presents mainly intergranular type fracture passing around the unhydrated particles and siC whiskers, and partially transgranular type fracture. The main strengthening mechanisms of the MDF cement composites reinforced with SiC whiskers are characterized by crack deflection, microcracking, and bridging of cracks.

• 한국주조공학회지
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• 제13권3호
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• pp.238-247
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• 1993

Microstructure, hardness and wear characteristics of $SiC_p/Al-6.5wt%Si-1.7wt%Mg$ alloy composites fabricated by the method of rheo-compocasting and hot pressing are investigated in this study. The dispersion of SiC particles in the composites is homogeneous and the hardness improves as additional amount increases. The wear amount of the matrix metal increases highly as wear rates increase, for the wear mechanism changes from adhesive wear to melt wear, and the matrix metal was coated on the surface of revolving disc and its weight increases. In the 5vol% composites, Fe is adhered on the surface of specimen by the projection of the dispersed hard SiC particles which have net-work structure and the coating layer is about $300{\mu}m$. But in the composite more than 20vol%, the wear amount of composite decreases because the SiC particles which have superior hardness, wear resistance and heat resistance properties resist wear, the abrasive wear turn out predominant wear mechanism and so the wear amount of revolving disc increases.

• Nuclear Engineering and Technology
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• 제56권3호
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• pp.846-854
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• 2024

FEMAXI-ATF is being developed for fuel performance modeling of SiC cladded UO2 fuel with focuses on modeling pellet-cladding mechanical interactions (PCMI). The code considers probability distributions of mechanical strengths of monolithic SiC (mSiC) and SiC fiber reinforced SiC matrix composite (SiC/SiC), while it models pseudo-ductility of SiC/SiC and propagation of cladding failures across the wall thickness direction in deterministic manner without explicitly modeling cracks based on finite element method in one-dimensional geometry. Some hypothetical BWR power ramp conditions were used to test sensitivities of different model parameters on the analyzed PCMI behavior. The results showed that propagation of the cladding failure could be modeled by appropriately reducing modulus of elasticities of the failed wall element, so that the mechanical load of the failed element could be re-distributed to other intact elements. The probability threshold for determination of the wall element failure did not have large influence on the predicted power at failure when the threshold was varied between 25 % and 75 %. The current study is still limited with respect to mechanistic modeling of SiC failure as it only models the propagation of the cladding wall element failure across the homogeneous continuum wall without considering generations and propagations of cracks.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권5호
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• pp.242-242
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• 2004

The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃＋Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1252_1253
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권2호
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• pp.98-103
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• 1999

The effect of $Al_2O_3$ additives to $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composites by pressureless sintering on microstructural, mechanical and electrical properties were investigated. The $\beta-SiC+39vol.%ZrB_2$ ceramic composites were pressureless sintered by adding 4, 8, 12wt.% $Al_2O_3$ powder as a liquid forming additives at $1950^{\cire}C$ for 1h. Phase analysis of composites by XRD revealed mostly of $\alpha-SiC(6H), ZrB_2$ and weakly $\alpha-SiC(4H), \beta-SiC (15R)$ phase. The relative density of composites was lowered by gaseous products of the result of reaction between \beta-SiC and Al_2O_3$, therefore, porosity was increased with increasing $Al_2O_3$ contents, and showed the maximum value of 1.4197MPa.$m^{1/2}$ for composite with 4wt.% $Al_2O_3$ additives. The electrical resistivity of $\beta-SiC+39vol.%ZrB_2$ electroconductive ceramic composite was increased with increasing $Al_2O_3$ contents, and showed positive temperature coefficient resistance (PTCR) in the temperature range of $25^{\cire}C$ to $700^{\cire}C$.

• 전기학회논문지
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• 제60권11호
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• pp.2083-2087
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• 2011

The SiC-$ZrB_2$ composites were produced by subjecting a 40:60 vol.% mixture of zirconium diboride($ZrB_2$) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering(SPS). Sintering was carried out for 60sec at $1400^{\circ}C$ (designation as TP145 and TP146), $1500^{\circ}C$(designation as TP155 and TP156) and uniaxial pressure 50MPa, 60MP under argon atmosphere. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined. The relative density of TP145, TP146, TP155 and TP156 were 94.75%, 94.13%, 97.88% and 95.80%, respectively. Reactions between ${\beeta}$-SiC and $ZrB_2$ were not observed via x-ray diffraction (hereafter, XRD) analysis. The flexural strength, 306.23MPa of TP156 was higher than that, 279.42MPa of TP146 at room temperature, but lower than that, 392.30MPa of TP155. The properties of a SiC-$ZrB_2$ composites through SPS under argon atmosphere were positive temperature coefficient resistance (hereafter, PTCR) in the range from $25^{\circ}C$ to $500^{\circ}C$. The electrical resistivities of TP145, TP146, TP155 and TP156 were $6.75{\times}10^{-4}$, $7.22{\times}10^{-4}$, $6.17{\times}10^{-4}$ and $6.71{\times}10^{-4}{\Omega}{\cdot}cm$ at $25^{\circ}C$, respectively. The densification of a SiC-$ZrB_2$ composite through hot pressing depend on the sintering temperature and pressure. However, it is convinced that the densification of a SiC-$ZrB_2$ composite do not depend on sintering pressure under SPS.

• 공업화학
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• 제26권5호
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• pp.543-548
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• 2015

리튬이온 전지용 음극소재의 용량 및 사이클 성능을 향상시키기 위해서 Si/C/CNF 합성물의 특성이 조사되었다. 제조과정으로는 SBA-15를 합성하고 볼밀링을 이용한 마그네슘환원을 통해 Si/MgO를 얻은 다음, Phenolic resin과 CNF를 이용해 탄화과정을 거쳐 최종적으로 산처리하여 Si/C/CNF 활물질을 합성하였다. 합성된 Si/C/CNF는 BET, XRD, FE-SEM 그리고 TGA를 이용하여 분석하였다. $50^{\circ}C{\sim}70^{\circ}C$까지 온도에 따라 SBA-15를 합성한 결과 $60^{\circ}C$에서 가장 큰 비표면적을 갖는 결과를 얻었다. 또한 LiPF6 (EC : DMC : EMC = 1 : 1 : 1 vol%) 전해질을 사용하여, 충방전, 사이클, CV와 임피던스 등과 같은 전기화학적 테스트를 수행하여 Si/C/CNF 전극의 이차전지 음극활물질로서 성능을 조사하였다. Si/C/CNF (Si : CNF = 97 : 3 중량비)를 이용한 전지의 용량은 1,947 mAh/g으로 다른 합성물보다 우수한 결과를 보였다. CNF 첨가량이 3 wt%에서 11 wt%로 증가함에 따라 용량 보존율이 84~77%로 안정성이 감소되었다. Si/C/CNF 합성소재 전극이 이차전지의 사이클 성능과 전기전도도를 개선할 수 있다는 것을 알 수 있었다.

• 한국재료학회지
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• 제32권12호
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• pp.553-559
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• 2022

In this work, the ablation behavior of monolith ZrB₂-30 vol%SiC (Z30S) composites were studied under various oxy-acetylene flame angles. Typical oxidized microstructures (SiO₂/SiC-depleted/ZrB₂-SiC) were observed when the flame to Z30S was arranged vertically. However, formation of the outmost glassy SiO₂ layer was hindered when the Z30S was tilted. The SiC-depleted region was fully exposed to air with reduced thickness when highly tilted. Traces of the ablated and island type SiO₂ were observed at intermediate flame angles, which clearly verified the effect of flame angle on the ablation of the SiO₂ layer. Furthermore, the observed maximum surface temperature of the Z30S gradually increased up to 2,200 ℃ proving that surface amorphous silica was continuously removed while monoclinic ZrO₂ phase began to be exposed. A proposed ablation mechanism with respect to flame angles is discussed. This observation is expected to contribute to the design of complex-shaped UHTC applications for hypersonic vehicles and re-entry projectiles.

• 한국재료학회지
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• 제12권11호
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.