• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.468-470
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.19-27
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• 1993

Abstract The PZT thin film was deposited by usin. RF magnetron sputtering with PZT(52/48) target. The formation of perovskite structure PZT thin film started at 55$0^{\circ}C$ on Si substrate. The AES results showed an oxide layer formed at the between Si and PZT film during the annealing. And, Ti$O_2$ layer appeared at the between TiN and PZT film for the annealing. But, the perovskite phase PZT film was formed after the annealing on the Si$O_2$/Si substarte. The ratio in PZT film was constant across the asdeposited PZT film, but, Pb have diffused into the Si substrate and Si have out-diffused into PZT layer during the post annealing at 75$0^{\circ}C$. The dielectric constants of PZT film indicated about 1300( thickness: 1500$\AA$, at 10KHz) but, the cracks were appeared to surface for annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.25-27
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• 2007

$Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.502-505
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a SiC (Silicon Carbide) thin film. SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A homeotropic alignment of nematic liquid crystal by ion beam (IB) exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is maintained by the ion beam alignment method on the SiC thin film surface until annealing temperature of $300^{\circ}C$. Consequently, homeotropic alignment effect of liquid crystal and the good thermal stability by the ion beam alignment method on the SiC thin film layer can be achieved.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.38-44
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• 1997

Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.

• Journal of Korean Vacuum Science & Technology
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• v.7 no.2
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• pp.39-44
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• 2003

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to a quarter micron and below, which results in the high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in PSG(phosphosilicate glass)/SiO$_2$ passivated Al-l%Si thin film interconnections. Straight line patterns, wide and narrow link type patterns, and meander type patterns, etc. were fabricated by a standard photholithography process. The main results are as follows. The current crowding effects result in the decrease of the lifetime in thin film interconnections. The electric field effects accelerate the decrease of lifetime in the double-layered thin film interconnections. The lifetime of interconnections also depends upon the current conditions of P.D.C.(pulsed direct current) frequencies applied at the same duty factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.408-409
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1. 3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film. was analyzed by XPS. Residual strain was investigated by Raman scattering. The surface morphology and voids between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.100-103
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• 2001

In order to investigate the magnetic properties of CoCr-based bilayered thin films on kind of underlayer, we introduced amorphous Si layer to Co-Cr(-Ta) magnetic layer as underlayer. With the thickness of CoCr, CoCrTa single layer, crystalline orientation and perpendicular coercivity was improved. It was revealed that by introducing the Si underlayer, the c-axis orientation of CoCr, CoCrTa magnetic layer was improved largely. However, with increasing Si film thickness, perpendicular coercivity and saturation magnetization of Cocr/si, CoCrTa/Si bilayered thin films was decreased. Grain size of bilayered thin films became larger.

• Journal of Sensor Science and Technology
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• v.19 no.3
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• pp.197-201
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• 2010

This paper describes the fabrication and characteristics of a NO sensor using ZnO thin film integrated 3C-SiC micro heater based on polycrystalline 3C-SiC thin film of operation in harsh environments. The sensitivity, response time, and operating properties in high temperature and voltages of NO sensors based SiC MEMS are measured and analyzed. The sensitivity of device with pure ZnO thin film at the heater operating power of 13.5 mW ($300^{\circ}C$) is 0.875 in NO gas concentration of 0.046 ppm. In the case of Pt doping, the sensitivity of at power consumption of 5.9 mW ($250^{\circ}C$) was 1.92 at same gas flow rate. The ZnO with doped Pt was showed higher sensitivity, lower working temperature and faster adsorption characteristics to NO gas than pure ZnO thin film. The NO gas sensor integrated SiC micro heater is more strength than others in high voltage and temperature environments.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1313-1314
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• 2006

The polycrystalline 3C-SiC thin films heteroepitaxially grown by LPCVD method using single precursor 1,3-disilabutane at $850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XRD and FT-IR. Residual strain was investigated by Raman scattering. The surface morphology was also observed by AFM and voids or dislocations between SiC and $SiO_2$ were measured by SEM. The grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS applications.