• 한국해양공학회:학술대회논문집
• /
• 한국해양공학회 2003년도 춘계학술대회 논문집
• /
• pp.294-299
• /
• 2003

The efficiency of complex slurry preparation route for the development of high performance RS-SiCf/SiC composites has been investigated. The green bodies for RS-SiC and RS-SiCf/SiC composite materials prior to the infiltration of molten silicon were prepared with various C/SiC complex matrix slurries, which associated with both different sizes of starting SiC particles and blending ratios of starting SiC and carbon particles. The reinforcing materials in the composite system were uncoated and C coated Tyranno SA SiC fiber. The characterization of RS-SiC and RS-SiCf/SiC composite materials was examined by means of SEM, EDS and three point bending test. Based on the mechanical property-microstructure correlation, process optimization methodology is discussed.

• 한국건축시공학회:학술대회논문집
• /
• 한국건축시공학회 2002년도 학술논문발표회
• /
• pp.85-90
• /
• 2002

This study aims to propose a fundamental report for pozzolan reaction of discarded Bentonite by heat-treatment as concrete mineral admixture. As discarded bentonite is clay mineral to contain a great quantity a lot of $SiO_2$ and $Al_{2}O_{3}$, it is anticipated to reveal pozzolan reaction ability by heat-treatment. To find out pozzolan reaction ability of discarded Bentonite slurry by heat-treatment, the experiment is excuted Phenolphtalein test, setting test, pH test and the analysis by X-ray diffractor. As a result of this study, discarded Bentonite slurry can be utilized as concrete mineral admixture by heat-treatment and especially, pozzolan reaction ability of discarded Bentonite slurry is superior to the situation of 50$0^{\circ}C$~$700^{\circ}C$, 60min.

• 한국세라믹학회지
• /
• 제48권2호
• /
• pp.189-194
• /
• 2011

Metallurgical grade silicon was recovered from slurry waste for ingot sawing process by acid leaching and thermal treatment. SiC abrasive was removed by gravity concentration and centrifugation. Metal impurities were removed by the acid leaching using HF/HCl. The remaining SiC was separated by the thermal treatment at $1600^{\circ}C$ in an inert atmosphere by the difference in melting points. The purity of the obtained silicon was found to be around 99.7%.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.141-141
• /
• 2009

Blue light-emitting diodes (LEDs), violet laser diodes 같은 광전소자들은 질화물 c-plane 기판위에 소자로 응용되어 이미 상품화 되어 왔다. 그러나 2족-질화물 재료들은 wurtzite 구조를 가지므로 c-plane에 평행한 자연적인 극성을 띌 뿐만 아니라 결정 내부 stress로 인한 압전현상 또한 나타나 큰 내부 전기장을 형성하게 된다. 이렇게 생성된 내부 전기장은 전자와 홀의 재결합 효율을 감소시키고 소자 응용 시 red-shift의 원인이 되곤 한다. 따라서 최근 들어 m-plane(1-100), a-plane (11-20)같은 무극성을 뛰는 기판 위에 소자를 만드는 방법이 각광을 받고 있는 추세다. 그러나 무극성 기판을 소자에 응용 시 Chemical Mechanical Planarization (CMP)에 의한 가공은 반도체 기판으로써 이용하기 위한 필수 불가결의 공정이다. c면(0001) SiC wafer에 대한 연구는 현재 많이 발표가 되어 있으나 무극성면 SiC wafer에 대한 CMP 공정에 대한 연구사례는 없는 실정이다. 본 연구에서는 C면 (0001)으로 성장된 잉곳을 a면(11-20)과 m(1-100)면으로 절단 후, slurry type (KOH-based colloidal silica slurry, NaOCl), 산화제, 연마제등을 변화하여 CMP 공정을 거침으로서 일어나는 기계 화학적 가공 양상에 대하여 알아보았다. 그 후 표면 형상 분석 하기위해 Atomic Force Microscope(AFM)을 사용하였고, 표면 스크레치를 SEM을 이용해서 알아보았다.

• 한국세라믹학회지
• /
• 제54권6호
• /
• pp.525-529
• /
• 2017

To improve the thermal resistance of a porous borosilicate lining block, we prepared and applied polysiloxane-fumed silica-ethanol slurry on top of the block and fired the coating layer using a torch for 5 minutes at $800^{\circ}C$. We conducted magnified characterizations using a microscope and XRD analysis to observe phase transformations, and TGA-DTA analysis to determine the thermal resistance. Thermal characterizations showed improved heat resistance with relatively high polysiloxane content slurry. Cross-sectional optical microscope observation showed less melting near the surface and decreased pore formation area with higher polysiloxane content slurry. XRD analysis revealed that the block and coating layer were amorphous phases. TGA-DTA analysis showed an endothermic reaction at around $550^{\circ}C$ as the polysiloxane in the coating layer reacted to form SiOC. Therefore, coating polysiloxane on a borosilicate block contributes to preventing the melting of the block at temperatures above $800^{\circ}C$.

• 한국세라믹학회지
• /
• 제47권6호
• /
• pp.485-490
• /
• 2010

In our previous studies, continuous SiC fiber-reinforced SiC-matrix composites ($SiC_f$/SiC) had been fabricated by two different slurry infiltration methods: vacuum infiltration and electrophoretic deposition (EPD). 12 wt% of $Al_2O_3-Y_2O_3$-MgO with respect to SiC powder was used as additives for liquid-phase assisted sintering. After hot pressing at $1750^{\circ}C$ under 20 MPa for 2 h in Ar atmosphere, a high composite density could be achieved for both cases, whereas the problems such as large grain size and non-uniform distribution of liquid phase were observed, which was resulted in the relatively poor mechanical properties of composites. Therefore, efforts have been made to reduce the grain growth during the sintering, including the optimization for hot pressing condition and utilization of spark plasma sintering using a SiC monolith. Based on the results, spark plasma sintering was found to be effective method in decreasing the amount of sintering additive, time and grain growth, which will be explained in comparison to the results of hot pressing in this paper.

• 한국세라믹학회지
• /
• 제31권4호
• /
• pp.375-380
• /
• 1994

Matrices retaining electrolyte in phosphoric acid fuel cell were prepared with SiC to SiC whisker mixing ratios of 1:0.5, 1:1, 1:1.5, 1:2, 1:3 by tape casting method. When viscosity of the slurry was 5.9 poise and the SiC to SiC whisker mixing ratios were 1:1, 1:1.5, 1:2, the ranges of porosity, acid absorbency and bubble pressure were 80~90%, 2.5~6 and 700~2200 mmH2O, respectively. Those ranges are acceptable for a practical electrolyte-retaining matrix. With increasing the mixing ratio of SiC whisker to SiC, the porosity and the vol.% of large pores in the main pore size distribution which is between 1 and 10 ${\mu}{\textrm}{m}$, increased rapidly. Impedance spectroscopy was measured to know characteristics of matrix inside and contact region of matrix to catalyst layer. When the SiC to SiC whisker mixing ratio was 1:2, hydrogen ions were transported in the matrix most effectively because of high ionic conductivity and low activation energy due to high acid absorbency in spite of high interfacial resistance. The cell current density of the cell made using the matrix was 220 mA/$\textrm{cm}^2$ at 0.7 V.

• 마이크로전자및패키징학회지
• /
• 제9권2호
• /
• pp.19-25
• /
• 2002

저온소결기판을 위하여 green sheet를 제조하기 위한 조성으로 $Li_2$O.MgO. $MgF_2$.$SiO_2$.$B_2O_3$를 기초 조성으로 선정하였다. 조합 후 용융하여 만들어진 모유리는 열분석을 통하여 최적 핵형성 온도와 최고 결정성장 온도를 도출하였으며 핵형성 온도는 전이온도와 같은 $490^{\circ}C$로 선정하였다. 결정화 유리를 제조하기 위하여 두 단계의 열처리를 실시하였으며 , 생성된 결정상은 Lithium fluorhectorite와 Lithium boron fluorphlogopite결정상 이었다. 계속적으로 제조된 결정화 유리는 water swelling 현상을 이용하여 분말화를 실시하였으며 평균 입도크기는 2.574 $\mu\textrm{m}$이었다. glass ceramics 분말은 물에 넣으면 반응하여 팽창하는 것과 함께 끈적끈적한 sol이 생성되는 현상을 이용하여 green sheet 제조를 위한 slurry를 제조하였다. Tape casting을 위한 slurry의 결정화 유리 분말 대비 용매의 최적 비율은 100:18이었고, 슬러리의 점도는 11,000~14,000cps 이었다. KCl 1 M용액 10min담지 시편에 대해서는 $900^{\circ}C$에서, 20 min담지 시편에 대해서는 $800^{\circ}C$에서 각각 치밀한 소결성을 나타내었다.

• 한국세라믹학회지
• /
• 제40권9호
• /
• pp.891-896
• /
• 2003

IGCC 발전 시스템에 사용되는 고온 가스 필터에 대하여 용융 Si 침윤공정 방법을 사용한 고강도 반응소결 탄화규소 고온 가스 필터 제조 공정이 개발되었다. 용융 Si 침윤 반응으로 제조된 반응소결 탄화규소의 상온 및 고온 파괴강도는 약 50-123, 60-66 MPa이었으며, 반응소결 탄화규소 다공체의 평균기공크기 및 기공율의 범위는 각각 60- 70 $\mu\textrm{m}$ 및 약 34 vol%이었다. 용융 Si 침윤 방법으로 제조된 반응 소결 탄화 규소 다공체에서는 SiC 입자 사이에 SiC/Si으로 이루어진 기지 상이 형성되어 고온 파괴 강도가 점토 결합 탄화 규소 다공체보다 우수하였다. 소결된 지지층 위에 Si 분말이 첨가되지 않은 slurry를 사용하여 여과층을 제조하였다. 여과층에 사용된 Sic 입자의 크기가 10$\mu\textrm{m}$에서 34 $\mu\textrm{m}$로 증가됨에 따라 SiC 입자 사이에 형성된 기지상의 두께가 증가하였다. 분진이 포함된 유체의 face velocity 변화에 따른 압손의 관계는 US filter사 Schumacher type 20 filter의 기체 유동 특성과 비슷하게 나타났으며, 분진여과 측정시 4분 내에 누출 분진의 크기가 1 $\mu\textrm{m}$ 크기 이하로 감소되었다.

• 한국전기전자재료학회논문지
• /
• 제32권2호
• /
• pp.100-103
• /
• 2019

The change in vanadium amount according to the growth direction of vanadium-doped semi-insulated (SI) SiC single crystals using high-purity SiC powder was investigated. High-purity SiC powder and a porous graphite (PG) inner crucible were placed on opposite sides of SiC seed crystals. SI SiC crystals were grown on 2 inch 6H-SiC Si-face seeds at a temperature of $2,300^{\circ}C$ and growth pressure of 10~30 mbar of argon atmosphere, using the physical vapor transport (PVT) method. The sliced SiC single crystals were polished using diamond slurry. We analyzed the polytype and quality of the SiC crystals using high-resolution X-ray diffraction (XRD) and Raman spectroscopy. The resistivity of the SI SiC crystals was analyzed using contactless resistivity mapping (COREMA) measurements.