• Title/Summary/Keyword: SiC size

Search Result 1,128, Processing Time 0.03 seconds

Synthesis of Isopropyldichlorosilane by Direct Process

  • Lim, Weon-Cheol;Cho, Joo-Hyun;Han, Joon-Soo;Yoo, Bok-Ryul
    • Bulletin of the Korean Chemical Society
    • /
    • v.28 no.10
    • /
    • pp.1661-1664
    • /
    • 2007
  • Direct reaction of elemental silicon with a gaseous mixture of isopropyl chloride (1) and hydrogen chloride in the presence of copper catalyst using a stirred bed reactor equipped with a spiral band agitator gave isopropyldichlorosilane having a Si-H bond (2a) as a major product and isopropyltrichlorosilane (2b) along with chlorosilanes, trichlorosilane and tetrachlorosilane. A process for production of 2a was maximized using the 1:0.5 mole ratio of 1 to HCl and smaller size of elemental silicon at a reaction temperature of 220 °C. When a reaction was carried out by feeding a gaseous mixture of 1 [12.9 g/h (0.164 mol/h)] and HCl [2.98 g/h (0.082 mol/h)] to a contact mixture of elemental silicon (360 g) and copper (40 g) under the optimum condition for 45 h, 2a among volatile products kept up about 82 mol % until 35 h and then slowly decreased down 68 mol % in 45 h reaction. Finally 2a was obtained in 38% isolated yield (based on 1 used) with an 85% consumption of elemental silicon in a 45 h reaction. In addition to 2a, 2b was obtained as minor product along with chlorosilanes, trichlorosilane, and tetrachlorosilane. The decomposition of 1 was suppressed and the production of 2a improved by adding HCl to 1.

Fabrication of Nanostructures by Dry Etching Using Dewetted Pt Islands as Etch-masks (Dewetting된 Pt Islands를 Etch Mask로 사용한 GaN 나노구조 제작)

  • Kim, Taek-Seung;Lee, Ji-Myon
    • Korean Journal of Materials Research
    • /
    • v.16 no.3
    • /
    • pp.151-156
    • /
    • 2006
  • A method for fabrication of nano-scale GaN structure by inductively coupled plasma etching is proposed, exploiting a thermal dewetting of Pt thin film as an etch mask. The nano-scale Pt metal islands were formed by the dewetting of 2-dimensional film on $SiO_2$ dielectric materials during rapid thermal annealing process. For the case of 30 nm thick Pt films, pattern formation and dewetting was initiated at temperatures greater $600^{\circ}C$. Controlling the annealing temperature and time as well as the thickness of the Pt metal film affected the size and density of Pt islands. The activation energy for the formation of Pt metal island was calculated to be 23.2 KJ/mole. The islands show good resistance to dry etching by a $CF_4$ based plasma for dielectric etching indicating that the metal islands produced by dewetting are suitable for use as an etch mask in the fabrication of nano-scale structures.

A Study on the Improvement of Prediction Accuracy for Rolling Force in Continuous Cold Rolling Mill (연속냉각압연에서의 압연하중 예측정도 향상에 대한 연구)

  • Song, Gil-Ho;Park, Hae-Doo;Kim, Shin-Il
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.20 no.7
    • /
    • pp.2257-2265
    • /
    • 1996
  • In the cold rolling mill, it is very important that a constrained static flow stress of rolled strip and rolling force calculation model be exactly considered to improve an prediction accuracy for rolling forces. Therefore, in this study, the values of the constrained static flow stress are used by deriving the regression equation which is a function of rolling conditions(FDT, CT) and chemical compositions(C, Si, Mn), previously applied by making the tables of yield strength for hot coils with size. And with the consideration that an elastic deformation part of an rolled strip appears at the entry and delivery side of the contacting area between the work roll and rolled strip is calculated. By applying these methods, the more accurate prediction for rolling force is obtained. As a results, the deviation of thickness is significantly reduced in the rolling direction.

Secondary Air Injection Effect on Cold Flow in a Laboratory-scale Circulating Fluidized Bed Combustor (실험실 규모 순환유동층 연소로에서 2차공기 주입이 냉간유동에 미치는 영향)

  • Jang, S.D.;La, S.H.;Hwang, J.H.;Kang, K.T.
    • 한국연소학회:학술대회논문집
    • /
    • 2000.12a
    • /
    • pp.217-228
    • /
    • 2000
  • Circulating Fluidized Bed Combustor(CFBC) has been used for the incineration of waste sewage sludge and for the power generation. In this study hydrodynamic characteristics of two phase flow have been studied in a riser section of CFBC. A lab-scale riser is designed and SiC (Geldart type B) is used for solid particles. Experiments are performed by controlling the fluidization parameters including superficial velocity and secondary air to primary air ratio for determination of solid holdup profiles in the riser. Superficial velocities of each fluidization regime are well agreed with results predicted by a theoretical model. The results show that the axial solid holdup distributions calculated by measuring differential static pressures in the riser are found to show a basic profile described by a simple exponential function. Our flow regime during experiments mainly belongs to fast fluidization regime for particle size of 300${\mu}m$. As the SA/PA ratio increases, solid holdup in the lower dense region of the riser increases.

  • PDF

The Aging Characteristics of Mg-6 wt.% Al-1 wt.% Zn Alloy Prepared by Gas Atomization (가스분사법으로 제조된 Mg-6 wt.% Al-1 wt.% Zn 합금의 시효특성)

  • Lee, Du-Hyung;Kim, Bo-Sik;Chang, Si-Young
    • Journal of Powder Materials
    • /
    • v.16 no.4
    • /
    • pp.275-279
    • /
    • 2009
  • The aging characteristics of gas atomized Mg-6 wt.% Al-1 wt.% Zn alloy were investigated and compared to those of cast Mg-6 wt.% Al alloy. The gas atomized Mg-6 wt.% Al-1wt.% Zn alloy powders had spherical morphology between 1 and 100 $\mu m$ in diameter. After compaction under the pressure of 700 MPa at $320^{\circ}C$ for 10 min, the Mg-6 wt.% Al-1 wt.% Zn alloy showed a grain size of approximately 40 $\mu m$ which is smaller than that of the cast Mg-6 wt.% Al alloy, and a relative compact density of approximately 93%. After ageing, the Mg-6 wt.% Al-1 wt.% Zn alloy showed much faster peak hardness than cast Mg-6 wt.% Al alloy. The Mg-6 wt.% Al-1 wt.% Zn alloy showed the new fine precipitations with ageing time, while the cast Mg-6 wt.% Al alloy was almost similar morphology.

HAZ TOUGHNESS AND MICROSTRUCTURE IN HIGH NITROGEN AUSTENITIC STAINLESS STEEL

  • Sato, Yoshihiro;Shiotsu, Tomoya;Nakagawa, Takafumi;Kikuchi, Yasushi
    • Proceedings of the KWS Conference
    • /
    • 2002.10a
    • /
    • pp.38-42
    • /
    • 2002
  • HAZ(Heat Affected Zone of weldm ents) properties were investigated for a high nitrogen austenitic stainless steel with a chemical composition of Fe-0.02C-0.15Si-6.00Mn-10.0Ni-23.0Cr-2.00Mo-0.48N-0.14V. Thermal cycle of HAZ was simulated by the thermal cycle simulator (Gleeble 1500). The heat treatment was applied to the Charpy test size sample without notch under various peak temperatures and/or the holding times condition. V-notch Charpy test was performed at the temperature range of 273~77 K. Metallographic examination also was carried out by using optical microscopy, scanning electron microscopy and transmission electron microscopy. The simulated specimens revealed a slight embrittlement compared with the base materials. The impact toughness of the specimens deteriorated with the decreasing test temperature. The results from Charpy V-notch test, however, showed that significant degradation of absorbed energy caused by brittle fracture was not observed for the specimen tested in the test temperature range.

  • PDF

Effects of Substrate Temperature and the $O_2$/Ar Ratio on the Characteristics of RF Magnetron Sputtered $RuO_2$ Thin Films

  • Park, Jae-Yong;Shim, Kyu-Ha;Park, Duck-Kyun
    • The Korean Journal of Ceramics
    • /
    • v.2 no.1
    • /
    • pp.43-47
    • /
    • 1996
  • $RuO_2$ thin films deposited directly on Si substrate by RF magnetron sputtering method using $RuO_2$ target have been investigated. Special interest was focused on the effect of process parameter on the surface roughness of $RuO_2$ films. Crystallization behavior and electrical properties of the films deposited at $300^{\circ}C$ were superior to those deposited at room temperature. Metallic Ru phase was formed in pure Ar and this phase had resulted poor adhesion after post annealing process in oxidizing ambient. Microstructural analysis reveals that the size of the $RuO_2$ crystallites gets smaller and the surface becomes smoother as the $O_2$ partial pressure or film thickness decreases. Irrespective of the $O_2/Ar$ ratio, resistivity of $RuO_2$ films ranged in $50~70 {\mu}{\Omega}-cm$. As the film thickness decreases, there is a thickness where the resistivity rises abruptly. Such an onset thickness turned out to be dependent n the $O_2$/Ar ratio.

  • PDF

Processing and Electrical Properties of COG(Chip on Glass) Bonding Using Fine-pitch Sn-In Solder Bumps (미세피치 Sn-In 솔더범프를 이용한 COG(Chip on Glass) 본딩공정 및 전기적 특성)

  • Choe Jae Hun;Jeon Seong U;Jeong Bu Yang;O Tae Seong;Kim Yeong Ho
    • Proceedings of the International Microelectronics And Packaging Society Conference
    • /
    • 2003.11a
    • /
    • pp.103-105
    • /
    • 2003
  • COG (Chip on Glass) technology using solder bump reflow has been investigated to attach IC chip directly on glass substrate of LCD panel. As It chip and LCD panel have to be heated to reflow temperature of the so]der bumps for COG bonding, it is necessary to use low-temperature solders to prevent the damage of liquid crystals of LCD panel. In this study, using the Sn-52In solder bumps of $40{\mu}m$ pitch size, solder joints between Si chip and glass substrate were made at temperature below $150^{\circ}C$. The contact resistance of the solder joint was $8.58m\Omega$, which was much lower than that of the joint made using the conventional ACF bonding technique. The Sn-52In solder joints with underfill showed excellent reliability at a hot humid environment.

  • PDF

Change of Luminescent Properties of Phosphors Through pH and Rw Control in Sol-gel Reaction (졸-겔반응에서 pH 및 Rw제어를 통한 Sr3-xMgSi2O8:EUx (0.01≤x≥0.1) 형광체의 발광특성 변화)

  • Ahn Joong-In;Han Cheong-Hwa;Kim Chang-Hae
    • Korean Journal of Materials Research
    • /
    • v.15 no.6
    • /
    • pp.419-425
    • /
    • 2005
  • In this paper, we describe the luminescent properties of the phosphors synthesized via sol-gel technique. When the phosphor prepared by sol-gel technique, reaction factors, such as pH condition, $R_w$ and drying temperature affected the luminescent intensity, particle size and morphology of final product. Therefore, we attempt to control these reaction factors in order to improve the luminescent efficiency of phosphors. As a result of our study, when the acid catalyst (HCl) was used, emission intensity was higher than the case of base catalyst $(NH_4OH)$. The product prepared at $R_w=60$ indicated the maximum intensity. As the increase of the $R_w$ value, the particle was agglomerated and emission intensity was decreased. Finally, optimum drying temperature of gel was found to be$ 180^{\circ}C$.

The study on preparation of $Sr_xBa_{1-x}$ $Nb_2O_6$ piezoelectric Thin Film of tungsten-bronze type by Metal Organic Decomposition Process and their properties (MOD 공법을 이용한 텅스텐 브론즈구조의 $Sr_x Ba_{1-x}$ $Nb_2O_6$ 압전 박막의 제조 및 특성 연구)

  • Kim, Kwang-Sik;Kim, Kyoung-Won;Jang, Gun-Ik;Ur, Soon-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2005.11a
    • /
    • pp.248-249
    • /
    • 2005
  • The tungsten bronze type of strontium barium niobate(SBN) thin film was synthesized by metal organic decomposion method for SBN stock solution and the SBN thin film process were deposited by spin-coating process on Pt-deposited si-wafer(100) by magnetron sputtering system. The thickness of SBN thin film was 150$\sim$200 nm and were optimized for rpm of spin-coater system. The structural variation of SBN thin film was studied by TG-DTA and XRD. The deposited SBN stock solution on annealing at $400\sim800^{\circ}C$ a pure tungsten bronze SBN phase and the corresponding average grain size about 500$\sim$1000 nm influenced by annealing temperature.

  • PDF