• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.207.2-207
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• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.106-106
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• 2015

In this study, we investigated electrochemically formed nanotube shape on ternary Ti-25Ta-xHf alloys with Hf contents. Ti-25Ta-xHf (x=0~15 wt.%) alloys were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1050^{\circ}C$ for 2h and then water quenching. The specimens were cut from ingots to 4 mm thickness and first ground and polished using SiC paper (grades from #100 to #2000). The anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. The formation of nanotubular film was conducted by electrochemical method in mixed electrolytes with 1 M $H_3PO_4$ + 0.8 wt. % NaF at 30 V for 2 h. The morphologies of nanotube depended on the Hf content in Ti-25Ta-xHf ternary system.

• Journal of IKEEE
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• v.18 no.4
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• pp.620-624
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• 2014

In this study, the electrical characteristics of Ni/CNT/$SiO_2$ structures were investigated in order to analyze the mechanism of carbon nanotubes in 4H-SiC MIS device structures. We fabricated 4H-SiC MIS capacitors with or without carbon nanotubes. Carbon nanotubes were dispersed by isopropyl alcohol. The capacitance-voltage (C-V) is characterized at 300 to 500K. The experimental flat-band voltage ($V_{FB}$) shift was positive. Near-interface trapped charge density and oxide trapped charge density values of Ni/CNT/$SiO_2$ structure were less than values of reference samples. With increasing temperature, the flat-band voltage was negative. It has been found that its oxide quality is related to charge carriers or defect states in the interface of 4H-SiC MIS capacitors. Gate characteristics of 4H-SiC MIS capacitors can be controlled by carbon nanotubes between Ni and $SiO_2$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.333-333
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• 2012

In this study, we investigated morphology of nanotube and micropore on the Ti-25Nb-xHf alloys with Hf contents after anodization. Ti-25Nb-xHf ternary alloys contained from (0~15) wt.% Hf contents were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1000^{\circ}C$ for 12h and then water quenching. The specimens were cut from ingots to 3mm thickness and first ground and polished using SiC paper (grades from 100 to 2000). 2steps anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. Micro-pore formation was performed in Ca+P mixed solution at 265V for 3min. After that, nanotube formation was in 1M $H_3PO_4$ electrolytes containing 0.8wt.% NaF solutionat 10V for 120min. Morphologies of micropore and nanotube depended on the Hf content in Ti-25Nb-xZr ternary system.

• Journal of the Korean Electrochemical Society
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• v.26 no.3
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• pp.35-41
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• 2023

The carbon-coated silicon monoxide (c-SiO_x), which is a negative electrode active material for lithium-ion batteries (LIBs), has a limited cycle performance due to severe volume changes during cycles, despite its high specific capacity. In particular, the significant volume change of the active material can deform the electrode structure and easily damage the electron transfer pathway. To improve performance and mitigate electrode damage caused by volume changes, we replaced parts of the carbon black conducting agent with carbon nanotubes (CNTs) having a linear shape. The content of the entire conductive material in the electrode was fixed at 10% by mass, and the relative content of CNTs ranged from 0% to 25% by mass to prepare electrodes and evaluate electrochemical performance. As the CNT content in the electrode increased, both cycle life and rate capability improved. Even a small amount of CNT can significantly improve the electrochemical performance of a c-SiO_x negative electrode with large volume changes. Furthermore, dispersing CNTs effectively can lead to achieving the equivalent performance with a reduced quantity of CNTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.403-406
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• 2019

We prepared yarned carbon nanotube (CNT) fibers from a CNT forest synthesized on a Si wafer by chemical vapor deposition (CVD). The yarned CNT fibers were thermally annealed to reduce their resistance by removing the amorphous carbonaceous impurities present in the fibers. The resistance of the yarned CNT fiber gradually decreased with an increase in the annealing temperature from $200^{\circ}C$ to $400^{\circ}C$ but increased again above $450^{\circ}C$. We carried out thermogravimetric analysis (TGA) to confirm the burning properties of the amorphous carbonaceous impurities and the crystalline CNTs present in the fibers. The pattern of the mass change of the sample CNT fibers was very similar to that of the resistance change. We conclude that CNT fibers should be thermally annealed at temperatures below $400^{\circ}C$ for reducing and stabilizing their resistance.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3025-3032
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• 2012

Carbon microcapsules containing silicon nanoparticles (Si NPs)-carbon nanotubes (CNTs) nanocomposite (Si-CNT@C) have been fabricated by a two step polymerization method. Silicon nanoparticles-carbon nanotubes (Si-CNT) nanohybrids were prepared with a wet-type beadsmill method. A polymer, which is easily removable by a thermal treatment (intermediate polymer) was polymerized on the outer surfaces of Si-CNT nanocomposites. Subsequently, another polymer, which can be carbonized by thermal heating (carbon precursor polymer) was incorporated onto the surfaces of pre-existing polymer layer. In this way, polymer precursor spheres containing Si-CNT nanohybrids were produced using a two step polymerization. The intermediate polymer must disappear during carbonization resulting in the formation of an internal free space. The carbon precursor polymer should transform to carbon shell to encapsulate remaining Si-CNT nanocomposites. Therefore, hollow carbon microcapsules containing Si-CNT nanocomposites could be obtained (Si-CNT@C). The successful fabrication was confirmed by scanning electron microscopy (SEM) and X-ray diffraction (XRD). These final materials were employed for anode performance improvement in lithium ion battery. The cyclic performances of these Si-CNT@C microcapsules were measured with a lithium battery half cell tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.954-957
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• 1999

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2$H$_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH$_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2$H$_2$gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.