• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.207.2-207
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• 2002

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 춘계학술대회 논문집
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• pp.106-106
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• 2015

In this study, we investigated electrochemically formed nanotube shape on ternary Ti-25Ta-xHf alloys with Hf contents. Ti-25Ta-xHf (x=0~15 wt.%) alloys were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1050^{\circ}C$ for 2h and then water quenching. The specimens were cut from ingots to 4 mm thickness and first ground and polished using SiC paper (grades from #100 to #2000). The anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. The formation of nanotubular film was conducted by electrochemical method in mixed electrolytes with 1 M $H_3PO_4$ + 0.8 wt. % NaF at 30 V for 2 h. The morphologies of nanotube depended on the Hf content in Ti-25Ta-xHf ternary system.

• 전기전자학회논문지
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• 제18권4호
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• pp.620-624
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• 2014

본 연구에서는, Ni/CNT/$SiO_2$ 구조의 4H-SiC MIS 캐패시터를 제작하고 전기적 특성을 조사하였다. 이를 통하여 4H-SiC MIS 소자에서 탄소나노튜브의 역할을 분석하고자 하였다. 탄소나노튜브는 이소프로필알코올과 혼합하여 $SiO_2$ 표면에 분산하였다. 소자의 전기적 특성 분석을 위하여 300-500K의 온도 범위에서 소자의 정전용량-전압 특성을 측정하였다. 밴드 평탄화 전압은 양의 방향으로 shift되었다. 정전용량-전압 그래프로부터 계면 포획 전하 밀도 및 산화막 포획 전하 밀도가 유도되었다. 산화막의 상태는 4H-SiC MIS 구조의 계면에서 전하 반송자 또는 결함 상태와 관련된다. 온도가 증가함에 따라 밴드 평탄화 전압은 음의 방향으로 shift되는 결과를 얻었다. 실험 결과로부터, Ni과 $SiO_2$ 계면에 탄소나노튜브를 첨가함에 따라 4H-SiC MIS 캐패시터의 게이트 특성을 조절 가능할 것으로 판단된다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 춘계학술발표회 논문집
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• pp.333-333
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• 2012

In this study, we investigated morphology of nanotube and micropore on the Ti-25Nb-xHf alloys with Hf contents after anodization. Ti-25Nb-xHf ternary alloys contained from (0~15) wt.% Hf contents were manufactured by vacuum arc-melting furnace. The obtained ingots were homogenized in an argon atmosphere at $1000^{\circ}C$ for 12h and then water quenching. The specimens were cut from ingots to 3mm thickness and first ground and polished using SiC paper (grades from 100 to 2000). 2steps anodization treatments on Ti-25Nb-xHf alloys were carried out at room temperature for experiments. Micro-pore formation was performed in Ca+P mixed solution at 265V for 3min. After that, nanotube formation was in 1M $H_3PO_4$ electrolytes containing 0.8wt.% NaF solutionat 10V for 120min. Morphologies of micropore and nanotube depended on the Hf content in Ti-25Nb-xZr ternary system.

• 전기화학회지
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• 제26권3호
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• pp.35-41
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• 2023

리튬이온 이차전지용 음극 활물질인 탄소가 코팅된 실리콘 일산화물(carbon-coated silicon monoxide, c-SiO_x)은 용량이 높지만, 충방전 중의 부피변화로 인해 사이클 수명이 제한된다. 특히, 활물질의 큰 부피 변화는 전극의 구조를 변형시켜 전자의 전달경로가 쉽게 손상될 수 있다. 전극에서 전자전달 경로를 형성하는 도전재인 카본블랙 중 일부를 선형의 형태를 지니는 탄소나노튜브(carbon nanotube, CNT)로 대체하여 활물질의 부피변화로 인한 전극의 손상을 완화하여 성능을 개선하고자 한다. 전극 내의 전체 도전재의 함량을 10 중량%로 고정하고, 탄소나노튜브의 상대적인 함량을 0, 2, 5, 10, 25 중량%로 카본블랙의 일부를 대체하여 전극을 제조하고 전기화학적 성능을 평가하였다. 전극 내의 탄소나노튜브의 함량이 증가함에 따라 사이클 수명과 속도특성이 모두 향상된다. 부피 변화가 큰 c-SiO_x 음극에 소량의 CNT를 도전재로 적용하는 것으로 전지의 전기화학적 성능을 크게 향상시킬 수 있다. 또한 CNT를 잘 분산시키게 되면 더 적은 양을 사용하면서도 동등한 성능을 구현할 수 있다.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.403-406
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• 2019

We prepared yarned carbon nanotube (CNT) fibers from a CNT forest synthesized on a Si wafer by chemical vapor deposition (CVD). The yarned CNT fibers were thermally annealed to reduce their resistance by removing the amorphous carbonaceous impurities present in the fibers. The resistance of the yarned CNT fiber gradually decreased with an increase in the annealing temperature from $200^{\circ}C$ to $400^{\circ}C$ but increased again above $450^{\circ}C$. We carried out thermogravimetric analysis (TGA) to confirm the burning properties of the amorphous carbonaceous impurities and the crystalline CNTs present in the fibers. The pattern of the mass change of the sample CNT fibers was very similar to that of the resistance change. We conclude that CNT fibers should be thermally annealed at temperatures below $400^{\circ}C$ for reducing and stabilizing their resistance.

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.3025-3032
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• 2012

Carbon microcapsules containing silicon nanoparticles (Si NPs)-carbon nanotubes (CNTs) nanocomposite (Si-CNT@C) have been fabricated by a two step polymerization method. Silicon nanoparticles-carbon nanotubes (Si-CNT) nanohybrids were prepared with a wet-type beadsmill method. A polymer, which is easily removable by a thermal treatment (intermediate polymer) was polymerized on the outer surfaces of Si-CNT nanocomposites. Subsequently, another polymer, which can be carbonized by thermal heating (carbon precursor polymer) was incorporated onto the surfaces of pre-existing polymer layer. In this way, polymer precursor spheres containing Si-CNT nanohybrids were produced using a two step polymerization. The intermediate polymer must disappear during carbonization resulting in the formation of an internal free space. The carbon precursor polymer should transform to carbon shell to encapsulate remaining Si-CNT nanocomposites. Therefore, hollow carbon microcapsules containing Si-CNT nanocomposites could be obtained (Si-CNT@C). The successful fabrication was confirmed by scanning electron microscopy (SEM) and X-ray diffraction (XRD). These final materials were employed for anode performance improvement in lithium ion battery. The cyclic performances of these Si-CNT@C microcapsules were measured with a lithium battery half cell tests.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.64-64
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• 2000

Since its discovery in 1991, the carbon nanotube has attracted much attention all over the world; and several method have been developed to synthesize carbon nanotubes. According to theoretical calculations, carbon nanotubes have many unique properties, such as high mechanical strength, capillary properties, and remarkable electronical conductivity, all of which suggest a wide range of potential applications in the future. Here we report the synthesis in the catalytic decomposition of acetylene at ~65 $0^{\circ}C$ over Ni deposited on SiO2, For the catalyst preparation, Ni was deposited to the thickness of 100-300A using effusion cell. Different approaches using porous materials and HF or NH3 treated samples have been tried for synthesis of carbon nanotubes. It is decisive step for synthesis of carbon nanotubes to form a round Ni particles. We show that the formation of round Ni particles by heat treatment without any pre-treatment such as chemical etching and observe the similar size of Ni particles and carbon nanotubes. Carbon nanotubes were synthesized by chemial vapour deposition ushin C2H2 gas for source material on Ni coated Si substrate. Ni film gaving 20~90nm thickness was changed into Ni particles with 30~90nm diameter. Heat treatment of Ni fim is a crucial role for the growth of carbon nanotube, High-resolution transmission electron microscopy images show that they are multi-walled nanotube. Raman spectrum shows its peak at 1349cm-1(D band) is much weaker than that at 1573cm-1(G band). We believe that carbon nanotubes contains much less defects. Long carbon nanotubes with length more than several $\mu$m and the carbon particles with round shape were obtained by CVD at ~$650^{\circ}C$ on the Ni droplets. SEM micrograph nanotubes was identified by SEM. Finally, we performed TEM anaylsis on the caron nanotubes to determine whether or not these film structures are truly caron nanotubes, as opposed to carbon fiber-like structures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 하계종합학술대회 논문집
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• pp.954-957
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• 1999

We have synthesized carbon nanotubes by thermal chemical vapor deposition of $C_2$H$_2$ on transition metal-coated silicon substrates. Carbon nanotubes are uniformly synthesized on a large area of the plain Si substrates, different from previously reported porous Si substrates. It is observed that surface modification of transition metals deposited on substrates by either etching with dipping in a HF solution and/or NH$_3$ pretreatment is a crucial step for the nanotube growth prior to the reaction of $C_2$H$_2$gas. We will demonstrate that the diameters of carbon naotubes can be controlled by applying the different transition metals.