• Transactions of the Society of Information Storage Systems
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• v.1 no.1
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• pp.73-77
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• 2005

In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

• Journal of the Korean Vacuum Society
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• v.2 no.1
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• pp.92-98
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• 1993

Si 기판 위에 증착된 Al 박막을 질소 ECR 플라즈마에 노출시켜 시료를 제작하고 분광타원해석법으로 분석한 결과 Al박막에 질화층이 형성되었음을 확인하였다. 사용한 질소 ECR 플라즈마의 전자온도와 전자밀도는 챔버내의 위치에 따라 각각 10~20eV, 0.9~1.2$\times$1011/㎤의 값을 보였다. 질소 ECR 플라즈마에 노출된 기판은 급격한 온도상승을 보였으며 노출시킨 뒤 5~6분이 지나면 $500^{\circ}C$ 근처에서 포화상태를 이루었다. 분광타원해석상수인 $\Delta$와 Ψ를 분석한 결과 증착된 Al의 두께는 시료에 따라 $140~160AA$이었고 표면에 형성된 AIN 층의 두께는 질소 ECR 플라즈마에 노출된 시간이 길수록 그리고 시료의 위치가 공명지점에 가까울수록 증가하였다. AlN층의 두께가 노출시간의 제곱근에 비례하는 것으로부터 AlN층은 Al의 표면에 흡착된 질소가 Al속으로 확산하여 이루어진 것으로 설명하였다.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1280-1282
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• 1997

The oxynitride films were photo-chemically deposited by ArF(wave length: 193nm) excimer laser CVD used to excite and dissociate gas phases $Si_2H_6$, $N_2O$, and $NH_3$ molecules. We obtained various electrical properties when we varied wafer cleaning procedures consisted of a conventional RCA and a two-dip step[4]. The results show the films have low leakage currents and good TZDB properties. We also analyzed the composition of the oxynitride films which have homogeneous composition throughout the film.

• Korean Journal of Materials Research
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• v.7 no.12
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• pp.1070-1076
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• 1997

DLC(diamond-like carbon)박막을 RF PCVD법으로 증착하여 일반적인 증착특성과 마찰.마모특성사이의 관계를 알아보기 위해, 증착속도, 박막경도, 내무압축응력 및 박막내의 수소량 측정을 통해 일반적인 증착특성을 조사하였다. 그리고 증착된 박막의 C-H 결합구조와 물질특성 분성을 위해 각각 FTIR 및 Raman분광분석을 행하였다. 박막의 마찰계수와 내마모특성은 Pin-on-disk형 마찰시험기를 이용하여 상기의 증착조건과의 상관관계를 조사하였다. DC self-bais, 즉 충돌에너지가 커지면 박막의 증착속도와 경도는 대체로 증가하고, 박막내의 압축응력은 최대값을 가지다가 다시 감소됨을 알 수 있언ㅆ다. 또한 박막내의 수소량은 급격히 감소하다가 포화됨을 알 수 있었다. 얻어진 박막의 마찰계수는 최소 0.08로 분위기가 dry일 때 더 작으며 내마모성은 이온의 충돌에너지와 밀접한 관계를 가지며 모재인 Si-wafer보다 훨씬 큼을 알수 있었다.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.2
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• pp.18-22
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• 2001

The thin films of high permitivity in ferroelectric materials using a capacitor are applied to DRAMs and FRAMs. (Ba, Sr)TiO$_3$ thin as ferroelectric materials were prepared by the sol-gel method and made by spin-coating on the Pt/Sio$_2$/Si substrate at 4,000 [rpm] for 10 seconds. The structural characteristics of the surface were analyzed by fractal dimension. The thickness of BST ceramics thin films was about 260∼280 [nm]. The property of the leakage current was stable with 10-9∼10-11[A] when the applied voltage was 0∼3[V]. BST thin films ha low leakage current properties when fractal dimension was low and a coating area was high.

• Journal of the Korean Ceramic Society
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• v.38 no.5
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• pp.474-478
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• 2001

유기 화학 기상 증착법(MOCVD)을 이용하여 반응기체 $O_2$의 양 및 Y와 Mn의 운반기체 비(Y/Mn)를 변화시켜가며 Si(100) 기판 위에서 MFSFET(metal-ferroelectric-semiconductor field effect transistor) 구조의 YMnO$_3$박막을 증착하였다. 반응기체 $O_2$의 양이 150sccm일 때 Y/Mn=2와 3인 경우 단일상의 육방정계 YMnO$_3$박막이 형성되었다. YMnO$_3$박막의 전기적 특성은 사방정계 YMnO$_3$박막에서는 나타나지 않았으나, 육방정계 YMnO$_3$박막의 경우 결정립 크기에 영향을 받아 단일상의 육방정계 YMnO$_3$박막 중 결정립 크기가 150nm~200nm(Y/Mn=2)인 경우에는 잔류분극이 100nC/$ extrm{cm}^2$인 P-E 이력곡선의 특성을 나타내었다.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.185-190
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• 1995

Tribological behavior of the diamond-like carbon (DLC) films sliding on floppy disk has been investigated. Hydrogenated DLC films have been prepared by plasma enhanced chemical vapor deposition (PECVD) using methane and hydrogen mixture in different volume ratios on ferrite substrates. DLC films show lower friction coefficients (0.2~0.4) than those of the uncoated ferrite(0.4~0.5). DLC films containing more hydrogen exhibit higher wear resistance. To investigate the roughness effect on wear, the substrates were polished with SiC papers prior to deposition. Too fine or too rough DLC surfaces result in poor wear resistance. Wear resistance of annealed DLC films at higher temperature slightly increases with respect to as-deposited film.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.441-442
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• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.97-101
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• 2003

New Pt/Ti and hi/Ti double-metal structures have been investigated for the application of a diffusion barrier between Cu and Si in deep submicron integrated circuits. Pt/Ti and Ni/Ti were deposited using E-beam evaporator at room temperature. The performance of Pt/Ti and Ni/Ti structures as diffusion barrier against Cu diffusion was examined by charge pumping method, gate leakage current, junction leakage current, and SIMS(secondary ion mass spectroscopy). These evaluation indicated that Pt/Ti(200${\AA}$/100${\AA}$) film is a good barrier against Cu diffusion up to 450$^{\circ}C$.

• Applied Microscopy
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• v.36 no.spc1
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• pp.47-56
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• 2006

Improvements are made to existing primitive cell volume measurement method to provide a real-time analysis capability for the phase analysis of nanocrystalline materials. Simplification is introduced in the primitive cell volume calculation leading to fast and reliable method for nano-phase identification and is applied to the phase analysis of Mo-Si-N nanocoating layer. In addition, comparison is made between real-time and film measurements for their accuracy of calculated primitive cell volume values and factors governing the accuracy of the method are determined. About 5% accuracy in primitive cell determination is obtained from camera length calibration and this technique is used to investigate the cell volume variation in WC-TiC core-shell microstructure. In addition to chemical compositional variation in core-shell type structure, primitive cell volume variation reveals additional information on lattice coherency strain across the interface.