• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.792-796
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• 2002

In this work, porous silicon(PS) layer is used as a sensing material to detect organic gases. To do this, PS sensors with membrane structure are fabricated. The sensors were made by applying the technologies of membrane formation by anisotropic etching of silicon, and PS layer formation by anodization in HF solution. From fabricated sensors, current-voltage (I-V) curves were measured against ethanol (called alcohol), methanol and acetone gases evaporated from 0.1 to 0.5% solution concentrations at $36^{\circ}C$. As the result, all curves showed rectifying behavior due to a diode structure between Si and PS, and the conductance of sensor devices increased largely with the organic solution concentration at high voltage of 5V.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1779-1783
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• 2006

The hybrid thin-film (HTF) passivation layer composed of the UV curable acrylate layer and MS-31 (MgO:SiO2=3:1wt%) layer was adopted in organic light emitting diode (OLED) to protect organic light emitting materials from penetrations of oxygen and water vapors. The moisture resistance of the deposited HTF layer was measured by the water vapor transmission rate (WVTR). The results showed that the HTF layer possessed a very low WVTR value of lower than $0.007g/m^2$ per day at $37.8^{\circ}C$ and 100% RH. Therefore, the HTF on the OLED was found to be very effective in protect what from the penetrations of oxygen and moisture.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.268-268
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• 2010

단일벽 탄소 나노튜브(SWCNT)는 그 뛰어난 전기적, 물리적 특성 때문에 반도체 공정에 있어서 중요한 p-type 채널 물질로 꼽히고 있다. 본 연구에서는 SWCNT를 성장하여 이를 이용한 전계효과 트랜지스터를 제작하고 또한, 부분적인 폴리머의 코팅으로 타입을 변화하는 연구를 보이고자 한다. Ferritin용액을 DI-water에 2000배 희석하여 SiO2 기판 위에 뿌린 뒤 Methanol을 이용하여 기판 표면에 촉매가 붙어있게 한다. 이 기판을 $900^{\circ}C$로 가열하여 유기물질을 제거한 뒤 화학 기상 증착(Chemical Vapor Deposition)방법으로 SWCNT를 성장하게 된다. 이렇게 성장된 SWCNT는 촉매의 농도에 비례하는 밀도를 가지게 되며 이 위에 전극을 증착하고 back-gate를 설치하여 FET를 제작한다. 메탈릭한 SWCNT는 breakdown 공정을 통하여 제거한 뒤, 전자 농도가 높은 NADH를 전체적으로 코팅을 한다. NADH는 기존의 다른 폴리머(polyethyleneimine: PEI)에 비교하여 코팅 후 전자 제공 효과가 크며 그 성질의 재현성이 높고 공기 중에서 안정성을 유지하는 능력이 있다. 이러한 NADH의 코팅으로 n-type으로의 SWCNT FET를 제작하였으며 type conversion 현상을 이용하면 국부적인 NADH의 코팅으로 homojunction-diode의 제작 등 다양한 소자의 제작에 적용될 것으로 예상한다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.452-455
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• 2007

This paper provides an overview on the characteristics of a-SiC:H barrier film deposited for flexible display applications. Key characteristics such as high crack resistance, high thermal/hydro stability, excellent adhesion to the polymer substrate, as well as very low permeance has been demonstrated. The excellence of this barrier film has been shown from competitive analysis compared with other barrier coating materials. Finally, flexible Polymer Light Emitting Diode (PLED) test pixels have been fabricated on the barrier coated plastic substrate, demonstrating the viability of the device with lifetime data.

• Journal of the Korean Institute of Telematics and Electronics
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• v.5 no.2
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• pp.8-14
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• 1968

A linear current-pulse discriminator consisting: of a transistor monostable multivibrator and a Si tunnel diode is described. The input currant pulse range is about 50$\mu$A~5.23mA. The measured maximum linearity deviation is $\pm$0.75% in the input current pulse range mentioned above. The pulse resolving ability of the discriminator measured depends upon the bias current through the T, D. ; and, under the reverse bias current of 3mA, the resolving time is 2rs if allow the excess pulse amplitude of 5%. The threshold stability of the discriminator depends mainly upon the stability of the peak current Ip of the T. D. ; and, under the ambient temperature variation from $0^{\circ}C$ to 5$0^{\circ}C$, no bigger threshold variation than the maximum linearity deviation, i. e. $\pm$ 0.75%, was observed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• Macromolecular Research
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• v.14 no.1
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• pp.38-44
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• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• Korean Journal of Materials Research
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• v.5 no.1
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• pp.3-11
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• 1995

$(TiO_{2})$ thin films were deposited on p-Si(100) substrate by APMOCVD using titanium isopropoxide as a source material. The deposition mechanism was well explained by the simple boundary layer theory and the apparent activation energy of the chemical reaction controlled process was 18.2kcal /mol. The asdeposited films were polycrystalline anatase phase and were transformed into rutile phase after postannealing. The postannealing time and the film thikness as well as the postannealing temperature also affected the phase transition. The C-V plot exhibited typical charateristics of MOS diode, from which the dielectric constant of about 80 was obtained. The capacitance of the annealed film was decreased but those of the Nb or Sr doped films were not changed. I-V characteristics revealed that the conduction mechanism was hopping conduction. The postannealing and the doping of Nb or Sr cause to decrease the leakage current and to increase the breakdown voltage.

• Journal of Radiation Protection and Research
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• v.43 no.4
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• pp.160-169
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• 2018

Background: This study aims to develop an integrated optical system that can simultaneously or selectively measure the signals obtained from radioluminescence (RL), thermoluminescence (TL), and optically stimulated luminescence (OSL), which are luminescence phenomena of materials stimulated by radioactivity, heat, and light, respectively. The luminescence mechanism of various materials could be investigated using the glow curves of the luminescence materials. Materials and Methods: RL/TL/OSL integrated measuring system was equipped with a X-ray tube (50 kV, $200{\mu}A$) as an ionizing radiation source to irradiate the sample. The sample substrate was used as a heating source and was also designed to optically stimulate the sample material using various light sources, such as high luminous blue light emitting diode (LED) or laser. The system measured the luminescence intensity versus the amount of irradiation/stimulation on the sample for the purpose of measuring RL, TL and OSL sequentially or by selectively combining them. Optical filters were combined to minimize the interference of the stimulation light in the OSL signal. A long-pass filter (420 nm) was used for 470 nm LED, an ultraviolet-pass filter (260-390 nm) was used for detecting the luminescence of the sample by PM tube. Results and Discussion: The reliability of the system was evaluated using the RL/OSL characteristics of $Al_2O_3:C$ and the RL/TL characteristics of LiF:Mg,Cu,Si, which were used as dosimetry materials. The RL/OSL characteristics of $Al_2O_3:C$ showed relatively linear dose-response characteristics. The glow curve of LiF:Mg,Cu,Si also showed typical RL/OSL characteristics. Conclusion: The reliability of the proposed system was verified by sequentially measuring the RL characteristics of radiation as well as the TL and OSL characteristics by concurrent thermal and optical stimulations. In this study, we developed an integrated measurement system that measures the glow curves of RL/TL/OSL using universal USB-DAQs and the control program.