• Tribology and Lubricants
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• 제10권3호
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• pp.18-28
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• 1994

Sliding friction between a spherical pin of 8mm in diameter and flat (disk) substrates coated with vacuum-deposited thin film was measured under ultra high vacuum pressure for various materials, various rates of film supply (8~210 nm/min), various sliding velocities (1.5~67.0 mm/s). It was found that the most effective lubrication was obtained when the adhesion between $Si_3N_4$ pin and SUS440C disk was high and that between $Si_3N_4$ pin and $Si_3N_4$ disk was low. When In film was used as a lubricant between $Si_3N_4$ pin and stainless steel disk, the friction coefficient had a value as low as 0.04. In this case, the normal load W and the sliding speed V were expressed as 10N and 24 mm/s for $10^{-6}Pa$. The dependence of $\mu$ on the thickness h of the Ag film, which was used as a lubricant between $Si_3N_4$ pin and SUS440C (Q) disk was expressed as $\mu$=0.12 for W=10N and V=24mm/s when the film was thicker than 100nm. A brief discussion on these relations is presented from the viewpoint of the real contact area.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.83-86
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• 1998

Ferroelectric PZT(40/67)/PZT(60/40)heterolayered thin films were Prepared by the alkoxide-based Sol-Gel method. PZT(40/60) and PZT(60/40) stock solutions were made and spin-coated on the P7Ti/Si02/Si substrate alternately. These PZT(40/60) and PZT(60/40) films were dried at 300$^{\circ}C$ for 30min to remove organic materials and were sintered at 650$^{\circ}C$ for 1 hour to crystalize into a perovskite structure. The coating and heating procedure were repeated 6 times to form heterolayered films. Increasing the number of coating, coercive field was decreased. The relative dielectric constant, loss, remanent polarization and coercive field of the 4-coated PZT heterolayered were 1200, 4.1[%], 30.794[${\mu}$C/㎡] and 147.22[kV/cm], respectively.

• 한국세라믹학회지
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• 제27권5호
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• 한국표면공학회지
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• 제47권2호
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.466-466
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• 2007

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• 한국재료학회지
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• 제14권5호
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• pp.343-347
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• 2004

We investigated the growth feasibility of polycrystalline Si film on mica substrate for the transfer of the layer to a plastic substrate. The annealing temperature was limited up to $600^{\circ}C$ because of crack development in the mica substrate. Amorphous Si film was deposited on mica substrate by PECVD and was crystallized by furnace annealing. During the annealing, bubbles were formed at the Si/mica interface. The bubble formation was avoided by the Ar-plasma treatment before amorphous Si deposition. A uniform and clean polycrystalline Si film was obtained by coating $NiCl_2$ on the amorphous Si film and annealing at $500^{\circ}C$ for 10 h. The conventional Si lithography was possible on the mica substrate and the devices fabricated on the substrate could be transferred to a plastic substrate.

• 한국재료학회지
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• 제5권7호
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• pp.835-841
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• 1995

Si$_3$N$_4$가 추진기관 연소조건 하에서 흑연의 산화와 마모를 효과적으로 방지하는 다층 코팅재료로 쓰일 수 있도록 하기 위하여 저압화학기상증착법(LPCVD)으로 Si$_3$N$_4$를 코팅할 때의 증착특성에 대해 연구하였다. 흑연 위에 pack cementation방법으로 SiC를 코팅하고 그 위에 저압화학기상증착법으로 Si$_3$N$_4$를 코팅 하였으며, 증착온도와 반응기체입력비를 변화시키면서 이에 따른 증착속도와 표면형상의 변화를 관찰하였다. 증착속도는 증착온도가 높아짐에 따라 처음에는 증가하다가 최대값을 나타낸 후 감소하는 경향을 나타냈으며, 그레인의 크기는 증착온도가 높아짐에 따라 작아지는 경향을 보였다. 한편, 반응기체의 입력비가 20$\leq$NH$_3$/SiH$_4$$\leq$40인 조건에서는 증착속도의 변화나 표면형상의 변화를 관찰할 수 없었다. 증착온도 800~130$0^{\circ}C$ 범위에서 증착된 Si$_3$N$_4$가 비정질상인 것을 XRD로 확인할 수 있었으며 130$0^{\circ}C$, 질소 분위기에서 2시간 동안 열처리하여 결정상인 Si$_3$N$_4$를 인을 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.108-108
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• 2011

공동주택에서 2025년 정부가 추진하고 있는 Zero Energy 건축물 구현과 친환경에 대한 탄소배출 저감 문제로 재생에너지 생산시스템의 추가 적용은 반드시 필요하다. 따라서 공동주택 적용 및 활용성을 높일 수 있는 BIPV시스템 개발을 통하여 설치면적 확보와 세대 활용성을 높일 수 있도록 하는 것이 필요하다. 특히 거실 창호의 경우 주방향이 남향, 남동 또는 남서향으로 배치되어 태양광을 적용하기에 적합한 특성을 가지고 있다. 그러나 창호는 건물외피의 역할과 재실자가 조망과 정보취득을 얻을 수 있는 중요한 통로가 되기 때문에 단열 문제나 시야 차폐의 문제는 발생하지는 않도록 하는 것이 필요하다. 본 연구에서는 a-si타입 모듈 2개를 10% 투과율로 Bsck Coating 색상을 달리한 모듈과 c-si BIPV 모듈을 커튼월 창호시스템으로 개발, 일반 2중 창호시스템과 비교 평가를 위해 실제 Test bed 건물에 시공하여 시환경 및 실내 창측면 온도변화 측정 분석을 진행하였다. 현재 국내외 출시되고 있는 a-si see through 모듈은 10~30%의 투과율로 창 마감재로 대체가 가능하나 건축 환경(시환경,열환경)에 대한 분석은 전무한 상태이다. 본 연구에서는 시환경과 창유리면의 열 부하, 자외선, 적외선 차폐 및 가시광선의 투과율에 대한 평가와 Back Coating에 따른 색온도 평가를 통해서 a-si BIPV의 공동주택 세대 발코니 창호 적합성에 대한 검토를 진행하였다. 연구결과는 아래와 같다. ${\bullet}$ 실내조도는 청천공 정오기준 가시성 확보 모듈의 경우 2,300 ~ 3,500lx를 나타내고 있어 대비 현상이나 창측의 급격한 조도 변화가 적은 시환경 구축이 가능 ${\bullet}$ 12시경 휘도는 창측면, 실내 벽체, 코너 바닥면을 대상으로 a-si BIPV 모듈을 적용한 경우 휘도비가 12:1로 KS나 IESNA의 광원과 근접면의 비 20:1 범위에 모두 존재, 적합한 것으로 분석되었으나 c-si의 경우는 그림자로 인한 대비 현상이 발생, 작업 시환경 문제 발생. ${\bullet}$ 이중시스템 창호와 비교하여 단열 성능 떨어짐. 발전시간대 창유리 면 온도 상승 으로 하절기 냉방부하 증가. ${\bullet}$ 자외선은 100% 가까이 차단, 적외선은 13~42%만 투과되고 가시광선은 13% 투과율을 나타내어 일반 창에 칼라 코팅을 적용하는 것과 유사한 경향을 나타냄.