• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.458-462
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• 2011

The strength of ceramic was improved by lamination by suppressing the propagation of cracks with compressive residual stress in the face layer of the laminate. Hot pressed SiAlON+SiC/SiC/SiAlON+SiC laminate discs were fabricated for tailored residual stress. The residual stress in this laminate was studied by X-ray diffraction (XRD). There was considerable compressive residual stress in the face layer. A Finite Element Analysis (FEA) was performed to support the measured XRD results and to determine the stress field in the laminate. The residual stress measured by XRD had satisfactory agreement with the analytically calculated and FEA values. The measured value by XRD was -385 ${\pm}$ 20 MPa over most of the face layer. The calculated and FEA values were -386 MPa and -371MPa, respectively. FEA also showed significantly modified stresses and the maximum tensile stress near the edge region which are possible crack generators in the presence of flaws or contact damage.

• Journal of the Korean Ceramic Society
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• v.37 no.2
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• pp.158-163
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• 2000

Six different SiC ceramics with SiO2-Re2O3 (Re=Yb, Er, Y, Dy, Gd, Sm) as sintering additives have been fabricated by hot-pressing the SiC-Re2Si2O7 compositions at 1850$^{\circ}C$ for 2 hr under a pressure of 25 MPa. The room temperature strneth and the fracture toughness of the hot-pressed ceramics were characterized and compared with those of the ceramics sintered with YAG (Y3Al5O12). Five SiC ceramics (Re=Yb, Er, Y, Dy, Gd) investigated herein showed sintered densities higher than 94% of theoretical. Tthe SiC-Re2Si2O7 compositions showed lower strength and comparable toughness to those from SiC-YAG composition, owing to the chemical reaction between SiO2 and SiC during sintering. SiC ceramics fabricated from a SiC-Y2Si2O7 composition showed the best mechanical properties of 490 MPa and 4.8 MPa$.$m1/2 among the compositions investigated herein.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.

• Journal of the Korean Ceramic Society
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• v.43 no.8 s.291
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• pp.509-514
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• 2006

In this study, chopped Hi-Nicalon SiC fiber Reinforced Porous Reaction Bonded SiC (RBSC) composites and it fabrication process were developed by using Si melt infiltration process. The porosity and average pore size in fabricated chopped SiC fiber reinforced porous RBSC composites were in the range of $30{\sim}40%$ and $40-90{\mu}m$, which mainly determined by the SiC powder size used as starting material and amount of residual Si in porous composites. The maximum flexural strength of chopped SiC fiber reinforced porous RBSC composite was as high as 80 MPa. The delayed fracture behavior was observed in chopped SiC fiber reinforced porous RBSC composites upon 3-point bending strength test.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1252_1253
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by spark plasma sintering(hereafter, SPS) were examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed in the XRD analysis The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.97[%], 74.62[%], 77.99[%] and 72.61[%] respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of ZrO2 phase. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are $4.57{\times}10^{-1}$, $2.13{\times}10^{-1}$, $1.53{\times}10^{-1}$ and $6.37{\times}10^{-2}[{\Omega}{\cdot}cm]$ at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater above 1000[$^{\circ}C$].

• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.999-1006
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• 1993

Si3N4(p)-SiC(p) composites were prepared by gas pressure sintering at 190$0^{\circ}C$ for 1 hour. $\alpha$-SiC with average particle size of 0.48${\mu}{\textrm}{m}$ were dispersed from zero to 50vol% in $\alpha$-Si3N4 with average particle size of 0.5${\mu}{\textrm}{m}$. Y2O3-Al2O3 system was used as sintering aids. When 10vol% of SiC was added to Si3N4, optimum mechanical properties were observed; relative density of 98.8%, flextural strength of 930MPa, fracture toughness of 5.9MPa.m1/2 and hardness value of 1429kg/$\textrm{mm}^2$. Grain growth of $\beta$-Si3N4 was inhibited as the amount of added SiC was increased. SiC particles were found inside the $\beta$-Si3N4 intragrains in case of 10, 20 and 30vol%SiC added composites.

• Journal of the Korean Ceramic Society
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• v.35 no.2
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• pp.172-179
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• 1998

Valve lifter namely tappet is supported by lifter hole which is located upper side of camshaft in cylinder block transforms rotatic mvement of camshaft into linear movement and helps to open and shut the en-gine valve as an engine parts. The face of valve lifter which is continuously contacting with camshaft brings about abnormal wears such as unfair wear and early wear because it is severely loaded in the valve train system. These wears act as a defect like over-clearance and cause imperfect combustion of fuel during the valve lifting in the combustion chamber. Consequently this imperfect combustion makes the engine out-put decrease and has cause on air pollution. To prevent these wears therefore The valve lifter cast in me-tal developed into SiC ceramics valve lifter which has an excellence in wear and impact resistance As a results the optimum process conditions like injection condition mixture ratio and debonding process could be established. After sintering fine-sinered dual microstructure in which prior ${\alpha}$-SiC matches well with new SiC(${\beta}$-SiC) produced by reaction among the ${\alpha}$-SiC carbon and silicon was obtained. Based on the study it is verified that mechanical properties of SiC valve lifter are excellent in Vickers hardness 1100-1200 bending strength (300-350 Pa) fracture toughness(1.5-1.7 Mpa$.$m1/2) Through engine dynamo test-ing SiC valve lifter and metal valve lifter are examined and compared into abnormal phenomena such as early fracture unfair and early wear. It is hoped that this research will serve as an important springboard for the future study of heavy duty diesel engine parts developed by ceramics which has a good wear resis-tance relaibility and lightability.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.827-835
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• 1998

Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.837-842
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• 1992

SiC and Si mixtures dispersed by 0.5~10.0 wt% of Al2O3 and reinforced by SiC whisker were sintered to Si3N4 bonded SiC bodies at 140$0^{\circ}C$ in a N2 gas atmosphere, and the nitridation and mechanical properties of sintered bodies were investigated. From these observation, it is concluded that relative density and bending strength increased with the rising of nitridation and the highest nitridation ratio was obtained for a specimen having 1.5 wt% Al2O3. On the other hand, the amount of $\beta$-Si3N4 in the specimens containing Al2O3 more than 5.0 wt% was increased abruptly and the best in fracture toughness was sintered for a composits having 30 wt% SiC whiskers.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1021-1029
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• 1994

SiC ultrafine particles of 1, 10, 20 and 30 vol% were dispersed in $\alpha$-Si3N4 matrix and hot-pressed under the condition of 30 MPa at 1800 and 190$0^{\circ}C$ respectively. Physical, mechanical properties and microstructures of sintered Si3N4-SiC nanocomposites were investigated. Flexural strength and density of Si3N4-10 vol% SiC nanocomposites hot-pressed at 190$0^{\circ}C$ represented the 1002 MPa and 97.9%T.D respectively, and it was confirmed as a remarkable improvement of 67% compared to Si3N4 monolith. Fracture toughness was shown as 7.2 MPa.m1/2 when the same composition was hot pressed at 180$0^{\circ}C$. This effect was supposed to be due to the improvement of microstructure by the adequate suppression of the excessive growth of Si3N4 grain with SiC nano-particles.