• 한국재료학회지
• /
• 제1권3호
• /
• pp.125-131
• /
• 1991

pMOS소자의 $p^{+}$게이트 전극으로 다결정실리콘과 비정질실리콘을 사용하여 고온의 열처리 공정에 따른 붕소이온의 침투현상을 high frequency C-V plot, Constant Current Stress Test(CCST), Secondary Ion Mass Spectroscopy(SIMS) 및 Transmission Electron Microscopy(TEM)를 이용하여 비교하였다. C-V plot분석 결과 비정질실리콘 게이트가 다결정실리콘 게이트에 비해 flatband전압의 변화가 작게 나타났으며, 게이트 산화막의 절연파괴 전하밀도에서는 60~80% 정도 향상된 값을 나타내었다. 비정질실리콘 게이트는 증착시 비정질로 형성되는 구조로 인한 얇은 이온주입 깊이와 열처리 공정시 다결정실리콘에 비교하여 크게 성장하는 입자 크기 때문에 붕소이온의 침투 경로가 되는 grain boundary를 감소시켜 붕소이온 확산을 억제한 것으로 생각된다. Electron trapping rate와 flatband 전압 변화와의 관계에 대하여 고찰하였다.

• 한국분말재료학회지
• /
• 제10권2호
• /
• pp.118-122
• /
• 2003

Alpha-SiAlON ceramics having various compositions and modifying cations were investigated with respect to their phase stability, transformation kinetics. and resulting microstructures. Each composition was heat treated at 150$0^{\circ}C$ for 1h and measured the $\alpha$-SiAlON transformation. The phase-boundary composition in the single-phase $\alpha$-SiAlON region showed sluggish transformation from $\alpha$-$Si_3N_4$ to $\alpha$-SiAlON compared to the phase-center composition in the diagram. Using the different rare earth modifying cations, dependence of transformation kinetics on the phase stability in a fixed composition was also explained. By changing size of the stable u-phase region with exchanging cations, systematic change in transformation was observed. Transformation rate of $\alpha$-SiAlON at low temperature has an important role on controlling the final microstructure. Less transformation gives more chances to develop elongated grain in the microstructure.

• 대한전기학회논문지
• /
• 제45권4호
• /
• pp.568-573
• /
• 1996

The amorphous silicon films deposited by low pressure chemical vapor deposition are crystallized by the various annealing techniques including low-temperature furnace annealing and two-step annealing. Two-step annealing is the combination of furnace annealing at 600 [.deg. C] for 24 h and the sequential furnace annealing at 950 [.deg. C] 1h or the excimer laser annealing. It s found that two-step annealings reduce the in-grain defects significantly without changing the grain boundary structure. The performance of the poly-Si thin film transistors (TFTs) produced by employing the tow-step annealing has been improved significantly compared with those of one-step annealing. (author). 13 refs., 6 figs., 1 tab.

• 한국세라믹학회지
• /
• 제28권3호
• /
• pp.215-224
• /
• 1991

The synthesis of SrTiO3 powders having high purity and homogeneous submicron particle size was attempted by the oxalate method. The microstructure and dielectric properties of SrTiO3 based boundary layer capacitor (BLC) were investigated. Strontium titanyl oxalate[SrTiO(C2O4)2.4H2O] was prepared from the mixing solution of (Sr, Ti) using oxalic acid(H2C2O4) as a precipitating agent at 8$0^{\circ}C$. The crystalline SrTiO3 powder was obtained by thermal decomposition of the precipitate above $600^{\circ}C$. The crystalline SrTiO3 powder containing Nb2O5 as a dopant, TiO2 and SiO2 as additives was sintered at 1360~144$0^{\circ}C$ in the reducing atmosphere to get semiconductive SrTiO3. Insulating material containing PbO-Bi2O3-B2O3 frit was printed on the sintered semiconductive SrTiO3 and fired at 120$0^{\circ}C$ for 2h to get the grain boundary diffusion.

• 소성∙가공
• /
• 제18권7호
• /
• pp.544-549
• /
• 2009

This study aimed to elucidate the deformation mechanism during low-temperature superplasticity of fine-grained Ti-6Al-2Sn-4Zr-2Mo-0.1Si alloy in the context of constitutive equation. For this purpose, initial coarse equiaxed microstructure was refined to $2.2{\mu}m$ via dynamic globularization. Globularized microstructure exhibited large superplastic elongations(434-826%) at temperatures of $650-750^{\circ}C$ and strain rate of $10^{-4}s^{-1}$. It was found that the main deformation mechanism of fine-grained material was grain boundary sliding accommodated by dislocation motion with both stress exponent (n) and grain size exponent (p) values of 2. When the alpha grain size, not sub-grain size, was considered to be an effective grain size, the apparent activation energy for low-temperature superplasticity of the present alloy(169kJ/mol) was closed to that of Ti-6Al-4V alloy(160kJ/mol).

• Nuclear Engineering and Technology
• /
• 제48권3호
• /
• pp.650-659
• /
• 2016

As a type of accident-tolerant fuel, fully ceramic microencapsulated (FCM) fuel was proposed after the Fukushima accident in Japan. The FCM fuel consists of tristructural isotropic particles randomly dispersed in a silicon carbide (SiC) matrix. For a fuel element with such high heterogeneity, we have proposed a two-temperature homogenized model using the particle transport Monte Carlo method for the heat conduction problem. This model distinguishes between fuel-kernel and SiC matrix temperatures. Moreover, the obtained temperature profiles are more realistic than those of other models. In Part I of the paper, homogenized parameters for the FCM fuel in which tristructural isotropic particles are randomly dispersed in the fine lattice stochastic structure are obtained by (1) matching steady-state analytic solutions of the model with the results of particle transport Monte Carlo method for heat conduction problems, and (2) preserving total enthalpies in fuel kernels and SiC matrix. The homogenized parameters have two desirable properties: (1) they are insensitive to boundary conditions such as coolant bulk temperatures and thickness of cladding, and (2) they are independent of operating power density. By performing the Monte Carlo calculations with the temperature-dependent thermal properties of the constituent materials of the FCM fuel, temperature-dependent homogenized parameters are obtained.

• 열처리공학회지
• /
• 제12권2호
• /
• pp.99-107
• /
• 1999

The graphitization is affected by the addition of small amount of the elements(such as Si, Al, Ni, B, Cr and Mn etc.) and the pre-treatment(such as cold rolling). Boron is well known element to accelerate the graphitization of cementite in high carbon steels. Also, cold rolling is known to accelerate the graphitization. But the graphitization nucleation mechanism by cold rolling is few reported. Therefore the effect of cold rolling in Fe-0.5%C-1.0%Si-0.47%Mn-0.005%B steel on the graphitization is investigated quantitatively using hardness test, optical microscope and scanning electron microscope, neutron induced microscopic radiography. The nucleation of graphite in cold-rolled Fe-0.5%C-1.0%Si-0.47%Mn-0.005%B steel is formed at void which is formed at pearlite/pearlite boundary by cold rolling. But the effect of cold rolling on graphitization in boron addition steel is more effective than that of no boron addition steel due to segregation of BN at void in boron addition steel.

• 열처리공학회지
• /
• 제29권5호
• /
• pp.209-215
• /
• 2016

In this study, the effect of Nb contents and processing parameters on dynamic recrystallization behaviour of 0.15C-0.2Si-0.5Mn low-carbon steels was investigated. Three kinds of steel specimens with different Nb contents were fabricated and then high-temperature compressive deformation test was conducted by varying reheating temperature (RT), deformation temperature (DT), and strain rate (SR). The Nb2 and Nb4 specimens containing Nb had smaller prior austenite grain size than the Nb0 specimens, presumably due to pinning effect by the formation of carbides and carbonitrides precipitates at austenite grain boundaries. The high-temperature compressive deformation test results showed that dynamic recrystallization behavior was suppressed in the specimens containing Nb as the strain rate increased and deformation temperature decreased because of pinning effect by precipitates, grain boundary dragging effects by solute atoms, although the compressive stress increased with increasing strain rate and decreasing deformation temperature.

• Bulletin of the Korean Chemical Society
• /
• 제22권2호
• /
• pp.154-158
• /
• 2001

The steps for the generation of very thin GaN films on ultrathin AlN/6H-SiC surface by alternating a pulsative supply (APS) of trimethyl gallium and NH3 gases have been examined by ASED-MO calculations. We postulate that the gallium cul ster was formed with the evaporation of CH4 gases via the decomposition of trimethyl gallium (TMG), dimethyl gallium (DMG), and monomethyl galluim (MMG). During the injection of NH3 gas into the reactor, the atomic hydrogens were produced from the thermal decomposition of NH3 molecule. These hydrogen gases activated the Ga-C bond cleavage. An energetically stable GaN nucleation site was formed via nitrogen incorporation into the layer of gallium cluster. The nitrogen atoms produced from the thermal degradation of NH3 were expected to incorporate into the edge of the gallium cluster since the galliums bind weakly to each other (0.19 eV). The structure was stabilized by 2.08 eV, as an adsorbed N atom incorporated into a tetrahedral site of the Ga cluster. This suggests that the adhesion of the initial layer can be reinforced by the incorporation of nitrogen atom through the formation of large grain boundary GaN crystals at the early stage of GaN film growth.

• Journal of Welding and Joining
• /
• 제30권6호
• /
• pp.106-112
• /
• 2012

This study was carried out to investigate the effect of bonding temperature and holding time on microstructure and mechanical properties in brazing joints of Ni-base superalloy using MBF-30 (Ni-4.5Si-3.2B [wt.%]). The heating rate was $20^{\circ}C$/min to the bonding temperatures $1050^{\circ}C$, $1070^{\circ}C$, $1090^{\circ}C$ under high vacuum condition. The holding times were 100s, 400s, 900s and 1600s. $Ni_3B$ phases and proeutectic Ni were observed in the interlayer of Ni-201. Then, Ni3B and Ni3Si were found in the middle region of brazing joint. Cr-boride phase appeared in the interlayer of Inconel-625. Tensile strength and elongation were decreased at $1050^{\circ}C$-1600s, $1070^{\circ}C$-900s and $1090^{\circ}C$-400s. After observation the fracture specimens, There was Ni3B which is very brittle phase in the grain boundary of Ni201.