• Journal of the Microelectronics and Packaging Society
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• v.30 no.2
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• pp.43-51
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• 2023

In this paper, we introduce the development trends of power devices which is the key component for power conversion system in electric vehicles, and discuss the characteristics of the next-generation wide-bandgap (WBG) power devices. We provide an overview of the characteristics of the present mainstream Si insulated gate bipolar transistor (IGBT) devices and technology roadmap of Si IGBT by different manufacturers. Next, recent progress and advantages of SiC metal-oxide-semiconductor field-effect transistor (MOSFET) which are the most important unipolar devices, is described compared with conventional Si IGBT. Furthermore, due to the limitations of the current GaN power device technology, the issues encountered in applying the power conversion module for electric vehicles were described.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.53-54
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• 2016

본 논문은 전동기 구동용 SiC MOSFET 인버터의 NEMA(National equipment manufacturer's association) 규격 만족을 위한 출력 필터 구조에 따른 영향을 분석한다. 구조와 목적에 따라 정현파 필터와 dv/dt 필터를 적용하여 380V, 60Hz, 3.7kW급 유도 전동기를 대상으로 실험을 수행하여 설계한 필터가 NEMA 규격을 만족시킬 수 있을 뿐만 아니라 전동기 누설전류를 감소시켜 효율까지 향상시킬 수 있음을 확인하였다.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.196-198
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• 2020

본 논문은 SiC MOSFET의 단락 검출을 위한 고정밀 Rogowski 코일 회로 설계 방법을 제안한다. 설계 방법을 제안하기 위해 먼저 Rogowski 코일의 기본 구성인 적분기를 실제 시스템 요구 사양에 맞추어 설계한다. 설계한 회로의 성능 확인을 위하여 DPT (double pulse test)를 실시하며, test 결과 분석을 통해 문제점을 파악하고 전류 센싱 정밀도 향상을 위해 입출력 필터 설계 및 Rogowski 코일 턴 수를 변경한다. 변경한 각 조건들에 대하여 DPT를 진행하고 각 test 결과를 기반으로 Rogowski 코일 회로 설계 방안을 제안한다.

• Proceedings of the KIPE Conference
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• 2020.08a
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• pp.353-354
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• 2020

본 논문에서는 SiC (Silicone Carbide) MOSFET 기반 Buck-Unfolder 토폴로지를 적용한 단상 태양광 인버터를 개발한다. 개발한 인버터의 성능 평가를 위해 3.5kW 급 prototype의 효율 및 전고조파 왜율(THD)을 분석한다.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.497-518
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• 2018

• KIPE Magazine
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• v.24 no.2
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• pp.33-37
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• 2019

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Journal of the Korean Society of Industry Convergence
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• v.26 no.6_1
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• pp.967-976
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• 2023

Currently, with the thriving development in the field of solar energy, the widespread adoption of solar grid-connected power conversion systems is rapidly expanding. As the market continues to grow, the efficiency of solar power conversion systems is steadily increasing, while prices are rapidly decreasing. Photovoltaic panels often produce low output voltages, and Boost converters are commonly employed to elevate and stabilize these voltages. They are also utilized for implementing Maximum Power Point Tracking (MPPT), ensuring the full utilization of solar power generation. Recently, synchronous control techniques have been introduced, using controllable switching devices like Si IGBT or SiC MOSFET to replace the diodes in the original circuits. However, this has raised concerns related to costs. This paper offers a compromise solution, considering both the performance and economic factors of the converter. It proposes a hybrid high-efficiency synchronous converter structure that combines Si IGBT and SiC MOSFET. Additionally, the proposed topology has been practically implemented and tested, with results confirming its feasibility and cost-effectiveness.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.49-54
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• 2017

In this paper, recent researches on new and renewable energy have been conducted due to problems such as energy exhaustion and environmental pollution, and new researches on high efficiency and high speed switching are needed. Therefore, we compared the efficiency by using high speed switching devices instead of IGBT which can't be used in high speed switching. The experiment was performed theoretically by applying the same parameters of the high speed switching devices which are the Cool MOS of Infineon Co., SiC C3M of Cree, and GaN FET device of Transform, by implementing the DC-DC boost converter and measuring the actual efficiency for output power and frequency. As a result, the GaN FET showed good efficiency at all switching frequency and output power.

• Journal of Power Electronics
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• v.18 no.5
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• pp.1336-1346
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• 2018

Wide band gap semiconductor devices such as SiC MOSFETs are becoming the preferred devices for high frequency and high power density converters due to their excellent performances. However, the proportion of the switching loss that accounts for the whole inverter loss is growing along with an increase of the switching frequency. In view of the third quadrant working characteristics of a SiC MOSFET, synchronous rectification discontinuous pulse-width modulation is proposed (SRDPWM) to further reduce system losses. The SRDPWM has been analyzed in detail. Based on a frequency domain mathematical model, a quantitative mathematical analysis of the harmonic characteristic is conducted by double Fourier transform. Meanwhile, a switching loss model and a conduction loss model of inverter for SRDPWM have been built. Simulation and experimental results verify the result of the harmonic analysis of the double Fourier analysis and the accuracy of the loss models. The efficiencies of the SRDPWM and the SVPWM are compared. The result indicates that the SRDPWM has fewer losses and a higher efficiency than the SVPWM under high switching frequency and light load conditions as a result of the reduced number of switching transitions. In addition, the SRDPWM is more suitable for SiC MOSFET converters.