• 한국분말재료학회지
• /
• 제21권6호
• /
• pp.434-440
• /
• 2014

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at $1500-1650^{\circ}C$ has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at $1500^{\circ}C$ obtains nearly stoichiometric composition, the composition of the SiC layer coated at $1300-1400^{\circ}C$ shows discrepancy from stoichiometric ratio(1:1). $3-7{\mu}m$ grain size of SiC layer coated at $1500^{\circ}C$ is decreased to sub-micrometer (< $1{\mu}m$) $-2{\mu}m$ grain size when coated at $1400^{\circ}C$, and further decreased to nano grain size when coated at $1300-1350^{\circ}C$. Moreover, the high density of SiC layer (${\geq}3.19g/cm^3$) which is easily obtained at $1500^{\circ}C$ coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

• 한국세라믹학회지
• /
• 제48권5호
• /
• pp.373-378
• /
• 2011

The composite added with surface-coated chopped carbon fiber showed the microstructure of a 3 dimensional discretional arrangements. The fiber reinforced reaction bonded silicon carbide composite, containing the 50 vol% carbon fiber, showed the porosity of < 1 vol%, 3-point bending strength value of 250MPa and fracture toughness of 4.5 $MPa{\cdot}m^{1/2}$. As the content of carbon fiber was increased from 0 vol% to 50 vol% in the composite, fracture strength was decreased due to the increase of carbon fiber, which has a less strength than SiC and molten Si. On the other hand, the fracture toughness was increased with increasing the amount of carbon fiber. According to the polished microstructure, carbon fiber was shown to have a random 3 dimensional arrangement. Moreover, the fiber pull-out phenomenon was observed with the fractured surface, which can explain the increased fracture toughness of the composite containing high content of carbon fiber.

• 분석과학
• /
• 제26권1호
• /
• pp.27-33
• /
• 2013

유기염화실란을 출발물질로 사용하고 초음파 반응 방법을 이용하여 알칼리 금속과 반응시켜 탈염소축합반응으로 폴리(디알킬)실란과 폴리(모노알킬)실란 등의 폴리알킬실란들을 합성하고 이들의 열적성질을 TGA로 조사하여 각각 10-20%와 40-60%의 잔류물 수득률을 얻었고 상업용 SiC 분말과 함께 펠렛 디스크를 성형하여 열분해 과정과 SEM, XRD 등으로 세라믹 복합체 응용 가능성을 조사하였다.

• 전력전자학회지
• /
• 제14권1호
• /
• pp.21-25
• /
• 2009

전력반도체소자는 1947년 트랜지스터의 출현으로 반도체시대가 도래한 이후 사이리스터, MOSFET 및 IGBT 등으로 발전하였다. 개발당시에는 10A 정도의 전류처리 능력과 수백V 정도의 진압저지능력을 가지고 있었지만, 현재에는 정격전류로는 약 8,000A, 정격전압으로는 무려 12kV 급까지 발전되었다. 그러나 전력반도체 소자의 대부분은 실리콘을 윈료로 제작되고 있으며 현재 실리콘의 물성적 한계에 직면하여 고전압, 저손실 및 고속 스위칭화에 대한 새로운 도전이 시작되고 있다. SiC 전력용 반도체는 실리콘 반도체의 이론적 물성한계를 극복할 수 있는 소재로서 80년대 이후 각광받아 왔다. 하지만 대구경의 단결정 웨이퍼 및 저결함의 에피박막의 부재로 90년대 중반까지는 가능성 있는 재료로서만 연구되었다. 90년대 중반 단결정 웨이퍼가 상용화된 이후 단결정 웨이퍼의 대구경화 및 저결함화가 급속히 진전되어 전력용 반도체 소자의 개발도 활기를 띄게 되었다. 본 기고에서는 탄화규소 반도체소자의 기술동향에 대해 소개하고자 한다.

• 한국수소및신에너지학회논문집
• /
• 제25권4호
• /
• pp.419-424
• /
• 2014

Direct ethanol fuel cell has been fabricated with ceramic membrane. A porous silicon carbide (SiC) membrane having approximately 30% porosity has been applied for a direct ethanol proton exchange membrane (DE-PEM) fuel cell. A horizontal type cell having Pt ($18mg/cm^2$) catalyst layer on both side of the ceramic membrane was used for the demonstration test. The ethanol oxidation based-fuel cell stack showed very high voltage (1.289V) and measurable current level (68mA) even though at room temperature.

• 한국해양공학회:학술대회논문집
• /
• 한국해양공학회 2006년 창립20주년기념 정기학술대회 및 국제워크샵
• /
• pp.162-165
• /
• 2006

In this study, Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method with $\beta$-SiC powder whose a particle size is 30nm and less on the average in argon condition at 1780 and $1800^{\circ}C$ under 20MPa. Alumina ($Al_2O_3$), yttria ($Y_2O_3$) and silica ($SiO_2$) were used for sintering additives. To investigate effects of particle-size and temperature on $SiO_2$, LPS-SiC was fixed $Al_2O_3$, $Y_2O_3$ and then particle-size of $SiO_2$ were changed as two kinds. The system of particle-size and temperature on sintering additives which affects a property of sintering os well os the influence depending on particle-size and temperature of sintering additives were investigated by measurement of sintering properties. Such as measurement of sintering density, vikers hardness and observing of microstructure were investigated to make sure of the optimum condition which is about matrix of $SiC_f/SiC$ composites. Base on the composition of sintering additives, microstructure and sintering property correlation, the effect of particle-size of sintering additives are discussed. An experimental method to investigate the dynamic characteristics of bums in extreme environmental condition is established.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.32-32
• /
• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 한국재료학회지
• /
• 제31권5호
• /
• pp.301-311
• /
• 2021

The conversion of all carbon preforms to dense SiC by liquid infiltration can become a low-cost and reliable method to form SiC-Si composites of complex shape and high density. Reactive sintered silicon carbide (RBSC) is prepared by covering Si powder on top of 0.5-5.0 wt% Y₂O₃-added carbon preforms at 1,450 and 1,500℃ for 2 hours; samples are analyzed to determine densification. Reactive sintering from the Y₂O₃-free carbon preform causes Si to be pushed to one side and cracking defects occur. However, when prepared from the Y₂O₃-added carbon preform, an SiC-Si composite in which Si is homogeneously distributed in the SiC matrix without cracking can be produced. Using the Si + C = SiC reaction, 3C and 6H of SiC, crystalline Si, and Y₂O₃ phases are detected by XRD analysis without the appearance of graphite. As the content of Y₂O₃ in the carbon preform increases, the prepared RBSC accelerates the SiC conversion reaction, increasing the density and decreasing the pores, resulting in densification. The dense RBSC obtained by reaction sintering at 1,500 ℃ for 2 hours from a carbon preform with 2.0 wt% Y₂O₃ added has 0.20 % apparent porosity and 96.9 % relative density.

• 비파괴검사학회지
• /
• 제14권2호
• /
• pp.90-100
• /
• 1994

초음파의 속도는 재료의 성질 연구에 폭넓게 사용되고 있다. 본 논문에서는 탄화규소(SiC)와 같은 구조용 세라믹스에서 기공으로 인한 밀도 변화를 미시역학 모델과 초음파의 속도 측정으로부터 결정할 수 있는 비파괴 평가법을 연구하였다. 기공의 특성은 재료의 탄성계수에 민감한 영향을 미치며, 따라서 제시한 미시역학 모델은 기공의 모양과 방향을 모두 고려할 수 있으며, 또한 기공 사이의 상호 작용을 반영하므로 기공량이 높은 경우에도 적용이 가능하다. 이론 밀도의 약 85-100% 밀도를 가진 SiC 시편들의 초음파 속도를 접촉식, 펄스겹침법(pulse overlap method)을 이용하여 측정하였으며, 속도-밀도 (또는 기공) 사이에 좋은 선형 관계가 있는 것으로 나타났다. 측정한 종파 또는 횡파 속도값과 모델로부터 기공의 부피 분율과 밀도를 계산하는 절차를 소개하였으며, 계산한 밀도값은 아르키메데스의 방법으로 측정한 값과 잘 일치하였다.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
• /
• pp.120-125
• /
• 2012

Daegu Solar Power Tower Plant of a 200 kW thermal capacity uses an open air receiver. An air receiver is generally based on the volumetric receiver concept with porous ceramic absorbers. Because absorber material is important in the volumetric receiver, ceramic materials with excellent thermal conductivity, high solar absorptivity and good thermal stability have been researched. KIER also developed SiC honeycomb absorber modules and evaluated performance of the modules at the KIER solar furnace. For performance evaluation, we made an open volumetric receiver containing the modules and measured the outlet temperature and the efficiency. It is demonstrated that performance of the KIER absorber is comparable to that of a reference absorber developed by DLR.