• The Journal of Korean Academy of Prosthodontics
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• v.58 no.3
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• pp.207-216
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• 2020

Purpose: To compare the polishing characteristics and their influence on Candida albicans adhesion to the recently introduced polyetherketoneketone (PEKK) and the conventional polymethylmethacrylate (PMMA) denture resin material. Materials and methods: Specimens from PEKK (Group E) and PMMA (Group M) were made in dimensions of 8 mm in diameter and 2 mm in thickness. The specimens were further divided into sub-groups according to the extent of polishing (ER, MR: rough; EP, MP: polished, N = 12 each). The specimens were polished using polishing machine and SiC foil. ER and MR group specimens were polished with 600 grit SiC foil only. EP and MP groups were further polished with 800, 1,000, 1,200 grit SiC foils sequentially. To measure the surface roughness values (Sa) of specimens, atomic force microscope (AFM) was used and scanning electron microscope (SEM) observation under 1,000, and 20,000 magnifications was performed to investigate surface topography. The polished specimens were soaked in C. albicans suspension for 2 hours with shaking to promote adhesion. The attached C. albicans were detached from the surface with 10 times of pipetting. The suspension of detached C. albicans was performed by serial dilution to 10³ times, and the diluted suspensions were inoculated on Sabouraud dextrose agar plates using spread plate method. After incubating the plate for 48 hours, colony forming unit (CFU)/plate of C. albicans was counted. Statistical analysis was performed using one-way ANOVA and Tukey HSD test to confirm significant difference between the groups (α=.05). Results: Average Sa value was significantly higher in MR group compared to other groups (P<.05), meaning that additional polishing steps reduced surface roughness effectively only in the PMMA specimens. There was no significant difference in Sa values between MP and EP groups. In SEM images, PEKK specimens showed numerous spikes of abraded material protruding from the surface and this phenomenon was more significant in EP group. The mean CFU/plate value was the highest in EP group and this was significant when it was compared to MP group (P<.05) which was the lowest. Conclusion: Polishing PEKK using serial SiC abrasive foil may result in higher adhesion of C. albicans. In clinic, this should be considered carefully.

• Fire Science and Engineering
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• v.32 no.6
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• pp.108-116
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• 2018

A melted bead microstructure can be divided into a deformed and undeformed layer. Measurement errors occur in the presence of a deformed layer, which should be removed through grinding/polishing whilst preserving the original structure. This paper proposes a grinding/polishing process to analyze the microstructure of copper melted beads. For the removal of the deformed layer, the correlation between the abrasive type/size, the polishing time and polishing rate was analyzed and the thickness of the deformed layer was less than $1{\mu}m$. The results suggest a new grinding/polishing procedure: silicon carbide abrasive $15{\mu}m$ (SiC P1200) 2 min, and $10{\mu}m$ (SiC P2400) 1 min; and diamond abrasive $6{\mu}m$ 8 min, $3{\mu}m$ 6 min, $1{\mu}m$ 10 min, and $0.25{\mu}m$ 8 min. In addition, a method of increasing the sharpness of the microstructure by chemical polishing with $0.04{\mu}m$ colloidal silica for 3 min at the final stage is also proposed. The overall grinding/polishing time is 38 min, which is shorter than that of the conventional procedure.

• Journal of Ocean Engineering and Technology
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• v.22 no.6
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• pp.35-40
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• 2008

The effect of counterpart roughness on abrasive wear characteristics of side plate materials of FRP ship, which were composed of glass fiber and unsaturated polyester resin composites, were investigated at ambient temperature by pin-an-disc friction test. The friction coefficient, wear rate and cumulative wear volume of these materials against SiC abrasive paper were determined experimentally. The wear rate of these materials decreased rapidly with sliding distance and then maintained a constant value. It was increased as counterpart roughness was rougher in a wear test. The cumulative wear volume tended to increase nonlinearly with sliding distance and depended on applied load and sliding speed for these composites. It could be verified by SEM photograph of fracture surface that major failure mechanisms were overlapping layers, microcutting, deformation of resin, delamination, and cracking.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.1
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• pp.1-9
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• 2012

This paper explained about the sludge recycling system which retrieved the silicon and abrasive from solar cell wafer slicing. The basic process of the recycling system was multiple centrifuge and secondary processes of ultra sonic agitation, addition of alcohol-water solution and heating sludge was added for raising separation efficiency. The recycling rate was about 96% and 94% for 2N, 4N silicon respectively. The SiC abrasive recycling rate was about 80%. To retrieve the high purity of 4N silicon, the heat process in vacuum furnace was added to remove remaining impurity components.

• Journal of Power System Engineering
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• v.10 no.1
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• pp.46-51
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• 2006

Present study was investigated the effect of the particle of the counterface of unidirectional carbon fiber reinforced composite. The friction coefficient of composite and the specific wear rate different sliding velocity were measured for this materials. The friction track of counterface was observed by an optical microscope and scanning electron microscope. There were insignificant effects of the specific wear rate under lower Sic abrasive particle, however it showed high effect on $30{\mu}m$ abrasive particle size. There were significant effects of friction and wear behavior of the fiber direction under 0.3m/s sliding speed. Major failure mechanisms can be classified such as microfracture, plowing, microcutting, cutting and cracking.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• Journal of the korean academy of Pediatric Dentistry
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• v.30 no.1
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• pp.41-46
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• 2003

In order to evaluate the sufficient etching time for successful bonding and also minimizing unnecessary mineral loss, the enamel surface roughness analysis was performed using confocal laser scanning microscopy. Sixty extracted sound human molar teeth were imbedded in the center of acrylic cylinder using self-curing clear resin exposing buccal surface, and then polished with series of SiC paper(220, 500, 800, 1000, 2000, 4000 grit). Each specimen was randomly assigned to six groups(N=10). 37% phosphoric acid was applied to the polished tooth surface for 10, 20, 30, 40, 50, 60 seconds respectively and washed with copious water. After the surface roughness analysis, five roughness parameters(Sa, Sq, Sz, Sdr, Ra) were statistically analysed by ANOVA and Duncan post hoc test. We found that the all five parameters had higher roughness value in 30 seconds etching time, especially parameter Sz showed the lowest value in 10 seconds etching time and the highest value in 30 seconds etching time compared with the other etching times(p<0.05).

• KSBB Journal
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• v.16 no.3
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• pp.295-301
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• 2001

The leaching effect of Thiobacillus ferrooxidance (ATCC 19859) upon polished pyrite ore in 9K medium at $30^{circ}C$ for 30 days was investigated. The surface atomic ratios for Fe, S, Al, Si, and Cu were analyzed by EPMA using fresh and leached samples. The atomic ratio of Fe and S were changed to Fe rich phase as leaching progressed over 13 days but the Fe/S ratio became constant between 13 and 30 days. SEM imaging showed that $10\mum$ oblong shapes formed on the surface after 13 days and that these further developed until 23 days. Fe, S and K atomic ratios were analyzed by SEM-EDS.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.180-180
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• 2016

보론이 도핑된 $3{\times}3cm$ 크기의 p 형 다결정 실리콘 기판의 표면을 경면연마한 후, 다이아몬드 입자의 seeding을 위해 슬러리 중 다이아몬드 분말의 입도를 5 nm로 고정하고 초음파 전처리 공정을 진행한 후, 다이아몬드 박막을 증착하였다. 다이아몬드 증착은 Microwave Plasma Chemical Vapor Deposition 장비를 이용하였으며, 공정 조건은 초기 진공 $10{\times}10^{-3}Torr$, 공정 가스 비율 $Ar:CH_4=200:2$, 가스 유량 202 sccm, 공정압력 90 Torr, 마이크로웨이브 파워 600 W, 기판 온도 $600^{\circ}C$이었다. 기판에 DC bias 전압을 인가하는 것을 공정 변수로 하여 0, -50, -100, -150, -200 V로 변화시켜가며, 0.5, 1, 2, 4 h 동안 증착을 진행하였다. 주사전자현미경과 XRD, AFM, 접촉각 측정 장비를 이용하여 증착된 다이아몬드 입자와 막의 특성을 분석하였다. 각 bias 조건에서 초기에는 다이아몬드 입자가 형성되어 성장되었다가 시간이 증가될수록 연속적인 다이아몬드 막이 형성되었다. Table 1은 각 bias 조건에서 증착 시간을 4 h까지 변화시키면서 얻은 다이아몬드 입자 또는 박막의 높이(두께)를 나타낸 것이다. 2 h까지의 공정 초기에는 bias 조건의 영향을 파악하기 어려운데, 이는 bias에 의한 과도한 이온포격으로 입자가 박막으로의 성장에 저해를 받는 것으로 사료된다. 증착시간이 4 h가 경과하면서 -150 V 조건에서 가장 두꺼운 막이 성장되었다. 이는 기판 표면을 덮은 다이아몬드 박막 위에서 이차 핵생성이 bias에 의해 촉진되기 때문으로 해석된다. -200 V의 조건에서는 오히려 막의 성장이 더 느렸는데, 이는 Fig. 1에 보이듯이 과도한 이온포격으로 Si/diamond 계면에서 기공이 형성된 것과 연관이 있는 것으로 보인다.