• Journal of Powder Materials
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• v.1 no.1
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• pp.15-20
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• 1994

The effect of SiC addition on sintering behaviors and microstructures of TiB2 ceramics were studied. The sintering of TiB2 was limited due to the surface diffusion and rapid grain growth at high temperature. However the addition of SiC to TiB2 ceramics improved the densification to above 99% of the theoretical density. The sintering of TiB2-SiC composite starts at 120$0^{\circ}C$ with the melting of the oxides in particle surface as impurities. After the reduction of the oxide by additional cabon at above 140$0^{\circ}C$, the grain boundary diffusion through the interface of TiB2-SiC play an important role. TEM observation showed neither chemical reactions nor other phases formed at the TiB2-SiC interfaces but the microcracks were observed due to the mismatch of thermal expansion between TiB2-SiC.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.32 no.11
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• pp.1003-1009
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• 2008

In this study, liquid phase sintered SiC (LPS-SiC) materials were made by hot pressing method. The particle size of nano-SiC powder was 30nm. Alumina ($Al_2O_3$), yttria ($Y_2O_3$) and silica ($SiO_2$) were used for sintering additives. To investigate effects of $SiO_2$, ratios of $SiO_2$ contents were changed by five kinds. Materials have been sintered for 1 hour at $1760^{\circ}C$, $1780^{\circ}C$ and $1800^{\circ}C$ under the pressure of 20MPa. The system of sintering additives which affects a property of sintering as well as the influence depending on compositions of sintering additives were investigated by measurement of density, mechanical properties such as flexural strength, vickers hardness and sliding wear resistance were investigated to make sure of the optimum condition which is about matrix of $SiC_f$/SiC composites. The abrasion test condition apply to load of 20N at 100RPM for 20min. Sintered density, flexural strength of fabricated LPS-SiC increased with increasing the sintering temperature. And in case of LPS-SiC with low $SiO_2$, sliding wear resistance has very excellent. Monolithic SiC $1800^{\circ}C$ sintering temperatures and 3wt% have excellent wear resistance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.481-486
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• 1997

It was succeeded in synthesizing the $Al_2O_3$-SiC refractory powders, which is main raw material of AlSiCa, from the domestic Hadong Kaolin. The oxidation reaction of the synthesized $Al_2O_3$-SiC powder was examined. The activation energy for SiC in $Al_2O_3$-SiC powder was calculated to be $\Delta$G=74.86 KJ/mol in air, however the poor sinterability of the powders is thought to be due to the vaporization of SiC in $H_2$ atmosphere. The formation of the whisker-SiC gives the possibility in use for high temperature structural material over high temperature refractory brick.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1512-1515
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• 1996

Dense $SiC-ZrB_2$ electro-conductive ceramic composites were obtained by hot pressing for high temperature structural application. The influences of the $ZrB_2$ additions an the mechanical and electrical properties of $SiC-ZrB_2$ composites were investigated. Samples were prepared by adding 15, 30, 45 vol.% $ZrB_2$ particles as a second phase to a SiC matrix. Sintering of monolithic SiC and $SiC-ZrB_2$ composites were achieved by hot pressing under a $10^{-4}$ torr vacuum atmosphere from 1000 to $2000^{\circ}C$ with a pressure of 30 MPa and held for 60 minutes at $2000^{\circ}C$. SiC and $SiC-ZrB_2$ samples obtained by hot pressing were fully dense with the relative densities over 99%. Flexural strength and fracture toughness of the samples were improved with the $ZrB_2$ contents. In the case of SiC sample containing 30vol.% $ZrB_2$, the flexural strength and fracture toughness showed 45% and 60% increase, respectively compared to those of monolithic SiC sample. The electrical resistivities of $SiC-ZrB_2$ composites were measured utilizing the four-point probe method and they decreased significantly with Increasing $ZrB_2$ contents. The resistivity of SiC-30vol.% $ZrB_2$ showed $6.50{\times}10^{-4}{\Omega}{\cdot}cm$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.7
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• pp.606-610
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• 2007

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC thin films, in which they were deposited on the oxidized Si substrate by APCVD method according to growth temperature. Since the phonon modes were not measured for $0.4{\mu}m$ thick 3C-SiC, $2.0{\mu}m$ thick 3C-SiC deposited on the oxidized Si at $1180^{\circ}C$, in which TO (transverse optical mode) and LO (longitudinal optical mode) phonon modes were appeared at 794.4 and $965.7cm^{-1}$, respectively. The broad FWHM (full width half maximum) can explain that the crystallinity of 3C-SiC deposited at $1180^{\circ}C$ becomes polycrystalline instead of disorder crystal. Additionally, the ratio of intensity $I_{LO}/I_{TO}{\approx}1.0$ of 3C-SiC indicates that the crystal disorder of $3C-SiC/SiO_2/Si$ is small. Compared poly $3C-SiC/SiO_2$ with $SiO_2/Si$ interfaces, $1122.6cm^{-1}$ phonon mode was measured which may belong to C-O bonding and two phonon modes, 1355.8 and $1596.8cm^{-1}$ related to D and G bands of C-C bonding in the Raman range of 200 to $2000cm^{-1}$.

• Journal of Powder Materials
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• v.6 no.1
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• pp.18-35
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• 1999

Phase equilibria in the system Si3N4-TiC-TiCxN1-x-C-N were determined by thermodynamic calculations (CALPHAD-method). The reaction peaction paths for Si3N4-TiC and SiC-TiC composites in the Ti-Si-C-n system were simulated at I bar N2-pressure and varying terpreatures. At a temperature of 1923 K two tie-triangles (TiC0.34N0.66+SiC+C and TiC0.13N0.87+SiC+Si3N4) and two 2-phase fieds (TiCxN1-x+SiC; 0.13

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1212-1218
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• 1995

Al2O3-coated SiC composite powder and mechanically mixed Al2O3-SiC composite powder were synthesized using Al-isopropoxide and commercial SiC as the starting materials. Experiment results showed that the sinterability of Al2O3-coated SiC composite powder was more improved than the mechanically mixed Al2O3-SiC composite powder by the effect of homogeneous coating of alumina around SiC particles. Hence, the mechanical properties of the former was also much more improved than the latter.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.364-371
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• 2013

The sintering behavior of monolithic SiC is examined using the binary sintering additive of $Al_2O_3$-rare earth oxide ($RE_2O_3$, where RE = Sc, Nd, Dy, Ho, or Yb). Through hot pressing at 20 MPa and $1750^{\circ}C$ for 1 h in an Ar atmosphere for 52 nm fine ${\beta}$-SiC powder added with 5 wt% sintering additive, a SiC density of > 97% is achieved, which indicates the effectiveness of $Al_2O_3-RE_2O_3$ system as a sintering of additive for SiC. Based on this result, 7 wt% of $Al_2O_3-Sc_2O_3$ is tested as an additive system for the fabrication of a continuous SiC fiber-reinforced SiC-matrix composite ($SiC_f$/SiC). Electrophoretic deposition combined with the application of ultrasonic pulses is used to efficiently infiltrate the matrix phase into the voids of $Tyranno^{TM}$-SA3 fabric. After hot pressing, a composite density of > 97% is obtained, along with a maximum flexural strength of 443 MPa.

• Journal of the Korean Ceramic Society
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• v.18 no.2
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• pp.79-82
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• 1981

SiC powder was heated in air over the temperature range of 1100-135$0^{\circ}C$. $\beta$-cristobalite was formed to cover the surfaces of SiC particles by the reaction: $SiC(s)+20_2(g)=SiO_2(s)+CO_2(g)$. It is assumed that the diffusion of oxygen ion through the formed surface layer of $\beta$-cristobalite controls the oxidation of the SiC particles. The diffusion coefficient of oxygen ion through the $\beta$-cristobalite layer was obtained as the following equation: $D=3.84{\times}10^{-17}$exp(-14.7/RT)