• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Korean Journal of Materials Research
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• v.10 no.8
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• pp.575-580
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• 2000

Diamond thin films were deposited on $Si_3N_4$, SiC, TiC and $Al_2O_3$, substrates by the CVD method using Ta(TaC)Filament, and the appearance of the diamond films and their adhesion properties were examined by SEM, optical microscopy, indentation test and compression topple test. Diamond films were deposited at lower $CH_4$ concentration than 5%$CH_4$ for all kinds of the substrate material, but graphitic(amorphous)carbon was observed at 10%$CH_4$. The diamond film of about $12\mu\textrm{m}$ thickness on WC substrate partly peeled off, but the film on $Si_3N_4$ substrate held good adhesion. The indentation test showed that roughly ground surface was very effective for adhesion of diamond films to substrate. The topple test revealed that film thickness was an important factor governing the adhesion of the diamond film.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.447-447
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• 2012

최근 생물전자공학에서 의료 산업 환경 등 많은 분야에 응용 가능한 바이오센서의 연구가 활발해지고 있다. 그 중 의료 분야에서, 수소이온 ($H^+$)의 농도 감지는 인간의 질병을 예측하는데 중요한 지표가 되며 이러한 수소이온 ($H^+$) 농도의 변화를 실시간으로 감지하기 위해 반도체를 기반으로 한 다양한 pH 센서가 제안되었다. Ion sensitive field effect transistor (ISFET), electrolyte-insulator-semiconductor (EIS)는 대표적인 반도체 pH센서로, 작은 소자 크기, 견고한 구조, 빠른 응답속도와 CMOS 공정과의 호환성이 좋다는 장점이 있다. 특히, EIS는 제조공정이 간단하고 감지막의 감지 특성 평가가 용이하기 때문에 지속적으로 연구되고 있는 pH 센서이다. 센서의 감지 특성을 평가함에 있어 감지막의 감지감도와 안정성이 우수해야 하며 이를 위해 high-k 물질이 감지막으로 사용되고 있다. 추가적으로 high-k 물질은 기존의 $SiO_2$와 $Si_3N_4$를 대신하여 높은 유전상수로 인한 고성능, 고감도 센서제작을 가능케 한다. 본 연구에서는, high-k 물질인 $HfO_2$, $Ta_2O_5$, $ZrO_2$, $Al_2O_3$를 각각 $SiO_2$ 완충막에 적층한 이단 감지막을 제작하였고, 그 특성을 기존의 $SiO_2$, $Si_3N_4$ 감지막의 감지특성과 비교하였다. pH 감지 특성을 평가해 본 결과, 기존의 $SiO_2$, $Si_3N_4$ 감지막과 비교했을 때 high-k 물질의 감지막을 갖는 EIS pH 센서에서 감지감도와 안정성 모두 우수하게 나타났다. 특히, high-k 물질 중 $HfO_2$에서 감지감도가 다소 크게 평가되었으나, 화학적 용액에 대한 안정성은 떨어졌다. 반면에 $Al_2O_3$과 $Ta_2O_5$은 화학용액에 대한 안정성 측면에서 최적의 특성을 보임을 확인하였다. 결론적으로, high-k 물질에 대한 전반적인 평가를 통하여 높은 pH 감지감도뿐만 아니라 우수한 안정성의 EIS pH 센서를 제작 할 수 있었다.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.46-51
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• 2003

Ferroelectric $Sr_{0.7}Bi_{2.1}Ta_{2.0}O_9$ thin films with 200 nm thicknesses were deposited on $Pt/Ti/SiO_2/Si$ substrate by liquid delivery MOCVD process. In these experiments, $Sr(TMHD)_2{\cdot}pmdeta,\; Bi(ph)_3$ and $Ta(O^i/Pr)_4(TMHD)$ were used as precursors, which were dissolved in n-butyl acetate and pentamethyldiethylenetriamine. Substrate temperature and reactor pressure of this experiment was $570^{\circ}C$and 5 Torr, respectively. The remanent polarization value (2Pr) of SBT thin film with annealed at $780^{\circ}C$was$7.247{\mu}C/cm^2$and$8.485 {\mu}C/cm^2$by applying 3 V and 5 V, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.94-98
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• 2000

Polycrystalline SBTN ferroelectric thin films were prepared by sol-gel method with various Nb mole ratios on Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperatures and characterized in terms of phase and microstructure. Relatively a well saturated hysteresis pattern was obtained at x =0.2 in S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin films. At an applied voltage of 5V, the dielectric constant ($\varepsilon$$_{r}$) and dissipation factor (tan $\delta$) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$)$_2$ $O_{9+}$$\alpha$/ thin film (x=0.2) were about 236.2 and 0.034. Measured remanent polarization (2Pr) and coercive field (Ec) were 4.28C/c $m_2$, and 38.88kv/cm respectively. No fatigue was observed up to 6$\times$10$_{10}$ switching cycles at 5V and the normalized polarization reduced by a factor of only 4%.%. 4%.%. 4%.%.%.%.%.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.136-140
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• 2003

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.15-20
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• 1996

The diffusion of hydrogen ions into a sensing membrane causes the output voltage of pH-ISFET to vary with time, which might be considered to be drift in this sensor. We tried to deposit ultra-thin film for minimizing tile drift that has been considered to be main obstacle for putting pH-ISFET to practical use. In this paper, tantalum pentoxide, known as a good pH sensing membrane, was formed to about $70{\AA}$ thick by sol-gel method on $Si_{3}N_{4}/SiO_{2}$-gate of pH-ISFET. The fabricated $Ta_{2}O_{5}$-gate pH-ISFET showed good sensitivity(about 59mV/ pH) and good lineality in the range of pH $3{\sim}11$, and had relatively small average pH drift of about 0.06 pH/day.

• Journal of the Korean Magnetics Society
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• v.14 no.5
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• pp.163-168
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• 2004

We prepared ultra thin film structure of Si(100)/ $SiO_2$(200 nm)/Ta(5 nm)/Ni$_{80}$Fe$_{20/(l～15 nm)}$Ta(5 nm) using an inductively coupled plasma(ICP) helicon sputter. Magnetic properties and cross-sectional microstructures were investigated with a superconduction quantum interference device(SQUID) and a transmission electron microscope(TEM), respectively. We report that NiFe films of sub-3 nm thickness show the B$_{bulk}$ = 0 and B$_{surf}$=-3 ${\times}$ 10$^{-7}$(J/$m^2$). Moreover, Curie temperature may be lowered by decreasing thickness. Coercivity become larger as temperature decreased with 0.5 nm - thick Ta/NiFe interface intermixing. Our result implies that effective magnetic properties of magnetoelastic anisotropy, saturation magnetization, and coercivity may change abruptly in nano-thick films. Thus we should consider those abrupt changes in designing nano-devices such as MRAM applications.