• 한국구조물진단유지관리공학회 논문집
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• 제14권5호
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• pp.144-152
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• 2010

콘크리트 구조물의 FRP를 이용한 보수보강 시 유기계 접착제인 에폭시 수지를 활용한 부착 공법이 일반적으로 사용되고 있으나 터널이나 하수박스 같은 습기가 많은 지역에서는 부착력이 발현되지 못하여 구조물의 보강 및 내구성에 문제가 있는 것으로 나타나고 있다. 이에 본 연구에서는 시멘트계 충진제를 사용하여 습윤 상태에서 콘크리트 구조물을 보강하고자 하였다. 먼저, 각각의 부착력을 알기 위하여 직접 부착실험을 실험을 통해 무기계 충진제가 습윤상태에서도 KS F 4716 규정에 만족함을 알 수 있었다. 반면, 에폭시 접착제는 포화율 100%에서 부착강도가 $0.73N/mm^2$, 14일 $0.84N/mm^2$로 습윤 상태에서의 부착성능에 문제점을 나타내었다. 또한 2차 실험으로 진행된 충진제 두께별 GFRP보강 보의 휨 강도측정에서는 충진제 두께가 10mm, 20mm, 30mmd일 때 각각 113%, 66%, 75%의 보강효과를 보였다. 이에 따라 충진제의 두께가 10mm일 때 안정적인 부착성능을 발휘하는 것을 알 수 있었다.

• Restorative Dentistry and Endodontics
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• 제32권4호
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• pp.313-326
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• 2007

본 연구는 단일 접착과정 상아질 접착제와 복합레진 사이에는 부적합성이 존재하며, 이를 개선하기 위해 중간 레진층이 필요하다는 가설을 규명하기 위해 시행되었다. 발치된 치아의 협설측 상아질에 3종의 단일 접착과정 상아질 접착제를 도포 후 광중합, 2종의 중간 레진층 적용, 광중합 또는 자가중합형 복합레진의 사용여부에 따라 30개의 실험군으로 분류하였다. 미세전단 결합강도를 측정하고 투과전자현미경 (TEM)을 이용하여 접착계면에서의 미세 누출과 수분의 이동경로를 관찰하여 접착제의 투과성을 평가하여 다음과 같은 결론을 얻었다. 중간 레진층을 적용 시 접착층의 투과도가 감소되었고 복합레진에 대한 단일 접착과정 상아질 접착제의 결합강도가 증가되었다. 따라서 시간 절약 및 간단한 접착과정을 선호하여 단순화된 상아질 접착제를 선택하는 것은 재고되어야 한다.

• 보존과학회지
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• 제38권2호
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• pp.124-132
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• 2022

본 연구는 국가민속문화재 일월수 다라니 주머니 매듭과 테두리 장식에 사용된 '금속 장식지'를 대상으로 과학적 분석을 통해 재료적 특성을 파악하였다. 금속 장식지는 SEM-EDS 분석을 통해 은(Ag) 및 황(S)이 확인되어 은제 금속박을 배지에 부착하여 제작한 것으로 추정할 수 있다. 황(S)은 농도와 접촉시간에 따라 은(Ag)을 황색부터 흑색까지 변색시킬 수 있다. 현재는 황색을 확인할 수 없으나, 은(Ag)으로 가금사를 만든 사례가 있어 본래 색을 추정하기 위해서는 추가 연구가 필요하다. 배지는 배면까지 적갈색이다. 함께 검출된 알루미늄(Al)과 규소(Si), 철(Fe)은 전통 편금사(片金絲)의 붉은색 접착제로 추정되는 주토(朱土)의 주성분으로, 금속 장식지의 접착제 관련 성분으로 추측된다. GC/MS 분석 결과에서 접착제 성분은 아교(阿膠)로 확인할 수 있었다.

• 한국해양공학회지
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• 제25권6호
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• pp.56-59
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• 2011

The demand for cold rolled steel (CR) for structural members is gradually increasing. If no surface treatment (coating for corrosion resistance) for CR is conducted, its use is very limited because CR is vulnerable to corrosion. Therefore, we need to develop a coating solution to provide high corrosion resistance for CR. In this study, an organic/inorganic coating solution with Si and Ti (Si polysilicate 7 wt.% + Urethane 13 wt.% + Ti amorphous 0.5 wt.%; LR-0727(1)) was used to evaluate the corrosion resistance of CR under a salt spray test. The specimens with the LR-0727(1) coating were heat treated in a drying oven at $120{\sim}210^{\circ}C$for 5 min. The corrosion resistance was investigated using a salt spray test of 7 h. In addition, an adhesive test was conducted. Rust showed under a heat treatment of $150^{\circ}C$, but no vestiges were found over $160^{\circ}C$. The specimens with heat treatment at $160^{\circ}C$ or more did not experience delamination. From these results, it is considered that the temperature limit for optimum heat treatment is $160^{\circ}C$ considering energy efficiency.

• Tribology and Lubricants
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• 제33권4호
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• pp.127-133
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• 2017

In order to characterize the adhesive properties and failure mechanisms of diamond-like carbon (DLC) films of two different thicknesses (130 nm and $1.2{\mu}m$), deposited by plasma-enhanced chemical vapor deposition on a Si substrate, scratch testing with a micro-indenter ($12.5{\mu}m$ tip radius) was performed under a linearly increasing load. These scratch tests were conducted under the same test conditions for both films. The critical load of each film was estimated from the scratch test results, based on a sharp increase in the coefficient of friction and a clear distinction of failure modes. The critical load was the basis for evaluating the adhesion strength of the films, and the $1.2{\mu}m-thick$ DLC film had superior adhesion strength. For better understanding of the failure modes, the following analyses were conducted: friction behavior and scratch tracks analysis using scanning electron microscopy, energy-dispersive spectroscopy, and 3-D profilometry. The scratch test results showed that failure modes were related to the thickness of the films. The 130 nm-thick DLC film underwent cohesive failure modes (cracks and chipping) before reaching to a gross failure stage. On the other hand, the thicker DLC film ($1.2{\mu}m-thick$) did not exhibit micro cracks before a sudden gross failure of the film together with the evidence of cracking and chipping of the Si substrate.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 대한치과보철학회지
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• 제27권2호
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• pp.101-121
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• 1989

This study investigated the effects of Silicoating procedure on the tensile bond strength of resin-bonded prostheses. The Rexillium III specimens were treated with electrochemical etching and Silicoating procedure, followed by thermocycling and the NNB, Pors-on 4, and Degudent-U specimens were treated with Silicoating procedure. The specimens were debonded in tension with a Tensilon machine. Also, all specimens were observed with SEM, concentration of Si elements was analyzed with EPMA, and the mode of failure was recorded. The results of this study were obtained as follows: 1. In the Rexillium III specimens, the tensile bond strength of the Silicoated specimens was higher than that of the electrochemically etched specimens, and significant differences were observed (P<0.05). 2. The tensile bond strength of electrochemically etched Rexillium III specimens, significant differences were observed between the thermocycled and nonthermocycled specimens (P<0.05), but no significant differences were observed in the Silicoated specimens (P>0.05). 3. The tensile bond strength of the Silicoated specimens decreased NNB, Pors-on 4, Rexillium III, and Degudent-U in that order named. 4. Unlike the electrochemically etched specimens, the Silicoated specimens showed gap-free metal-resin interfaces with SEM. 5. Compared to the electrochemically etched specimens, the Silicoated specimens showed higher concentration of Si elements at the metal-resin interfaces and resin cement. 6. Photographic evaluation (X2) of the fractured sites revealed mainly cohesive failures with the Silicoated specimens, and adhesive failures with the electrochemically etched specimens.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.88-91
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina ($Al_2O_3$) abrasive containing slurry with $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• 공업화학
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• 제25권4호
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• pp.352-356
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• 2014

${\alpha},{\omega}$-Aminopropylpolydimethylsiloxane을 bisphenol-A diglycidyl ether (DGEBA)계 이관능성 에폭시 수지와 반응시켜 polydimethylsiloxane (PDMS)의 양 말단에 에폭시가 도입된 실리콘 변성 에폭시 수지(EMPDMS)를 제조한 다음 alkylesteraminopropyl alkoxy silane (XD 5607)을 반응시켜 PDMS가 도입된 에폭시 hybrid 화합물(EMPDMSH)을 제조하고 이를 FT-IR, $^1H$-NMR 및 $^{29}Si$-NMR로 구조를 확인하였다. EMPDMSH base 수지에 용매를 혼합하여 코팅 액을 제조하였으며, 이를 에폭시/유리 섬유 복합재료로 얻어진 필름에 도포하고 경화시킨 후 base수지 중에 함유된 PDMS의 함량에 따른 물성을 측정하였다. 코팅 면의 접촉각을 측정한 결과 기존의 에폭시 수지로 코팅하여 얻은 코팅 면에 비해 접촉각이 $41^{\circ}$에서 $71^{\circ}$로 약 $30^{\circ}$정도 증가되고 있어 코팅 면에 PDMS가 나타나 있음을 확인할 수 있었다. 또한 접착력 및 표면 평활도 개선효과 측정 결과 에폭시 자체 코팅 액이나 일반적으로 많이 사용되고 있는 아크릴계 코팅 액 보다 5B 등급의 뛰어난 접착력을 나타내었고 평활도 개선 효과도 우수함을 나타내었다.

• 한국표면공학회지
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• 제47권2호
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• pp.68-74
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• 2014

The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the average diameter of 6.18 nm. This Pd/Cu nano-particles were uniformly deposited on the substrate of Si/$SiO_2$/Ti wafer using electrophoresis with the high frequency Alternating Current (AC). After electroless Cu deposition on the substrate treated with Pd/Cu/PVP colloids, the adhesive property between deposited Cu layer and substrate was evaluated. The Cu deposit obtained by SSEP with Pd/Cu/PVP colloids showed superior adhesion property to that on Pd ion catalyst-treated substrate. Finally, by implementing the SSEP using Pd/Cu/PVP colloids, we achieved 700% improvement of step coverage of Cu seed layer compared to PVD process, resulting in void-free filling in high aspect ratio TSV.