Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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A Study on the Seed Step-coverage Enhancement Process (SSEP) of High Aspect Ratio Through Silicon Via (TSV) Using Pd/Cu/PVP Colloids

Pd/Cu/PVP 콜로이드를 이용한 고종횡비 실리콘 관통전극 내 구리씨앗층의 단차피복도 개선에 관한 연구

  • Lee, Dongryul (Surface Technology R&BD Group, Korea Institute of Industrial Technology) ;
  • Lee, Yugin (Surface Technology R&BD Group, Korea Institute of Industrial Technology) ;
  • Kim, Hyung-Jong (Surface Technology R&BD Group, Korea Institute of Industrial Technology) ;
  • Lee, Min Hyung (Surface Technology R&BD Group, Korea Institute of Industrial Technology)
  • 이동열 (한국생산기술연구원 표면처리연구실용화그룹) ;
  • 이유진 (한국생산기술연구원 표면처리연구실용화그룹) ;
  • 김현종 (한국생산기술연구원 표면처리연구실용화그룹) ;
  • 이민형 (한국생산기술연구원 표면처리연구실용화그룹)
  • Received : 2014.04.14
  • Accepted : 2014.04.23
  • Published : 2014.04.30
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Abstract

The seed step-coverage enhancement process (SSEP) using Pd/Cu/PVP colloids was investigated for the filling of through silicon via (TSV) without void. TEM analysis showed that the Pd/Cu nano-particles were well dispersed in aqueous solution with the average diameter of 6.18 nm. This Pd/Cu nano-particles were uniformly deposited on the substrate of Si/$SiO_2$/Ti wafer using electrophoresis with the high frequency Alternating Current (AC). After electroless Cu deposition on the substrate treated with Pd/Cu/PVP colloids, the adhesive property between deposited Cu layer and substrate was evaluated. The Cu deposit obtained by SSEP with Pd/Cu/PVP colloids showed superior adhesion property to that on Pd ion catalyst-treated substrate. Finally, by implementing the SSEP using Pd/Cu/PVP colloids, we achieved 700% improvement of step coverage of Cu seed layer compared to PVD process, resulting in void-free filling in high aspect ratio TSV.

Keywords

References

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