• 제목/요약/키워드: Si-O-C bond

검색결과 103건 처리시간 0.029초

PECVD법으로 증착된 $Ta_2O_5$박막의 누설전류에 미치는 RTA의 영향 (Effect of RTA on Leakage Current of $Ta_2O_5$ Thin Films Deposited by PECVD)

  • 김진범;이승호;소명기
    • 한국재료학회지
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    • 제4권5호
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    • pp.550-555
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    • 1994
  • 본 연구에서는 반응기체 $PaCl_5$ (99.99%)와 $N_2O$(99.99%)를 사용하여 PECVD법으로 P-type(100) Si기판위에 $Ta_2O_5$ 박막을 증착시킨후 RTA 후처리를 통하여 누설전류를 개선시키고자 하였다. 실험결과, 증착온도 증가에 따라 굴절율은 일정하게 증가하였고 $500^{\circ}C$에서 최대 증착속도를 보였다. 증착된 $Ta_2O_5$막의 FT-IR 분석결과 증착온도 증가에 따라 Ta-O bond peak intensity가 증가함을 알 수 있었으며, 누설전류 특정결과 증착온도가 증가함에 따라 누설전류값이 감소함을 알 수 있었다. 또한 증착된 $Ta_2O_5$막을 RFA방법을 이용하여 후처리 한 결과, as deposited 상태보다 누설전류가 감소함을 알 수 있었으며 이는 RTA처리후 AES와 FT-IR 분석을 통하여 $Ta_2O_5$막 내의 oxygen농도와 Ta-O bond peak intensity를 측정한 결과 RTA 후처리에 의하여 $Ta_2O_5$막내의 존재하는 O-deficient 구조들이 감소한 때문이었다.

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플라즈마 산화방법을 이용한 질소가 첨가된 실리콘 산화막의 제조와 산화막 내의 질소가 박막트랜지스터의 특성에 미치는 영향 (Low-Temperature Growth of N-doped SiO2 Layer Using Inductively-Coupled Plasma Oxidation and Its Effect on the Characteristics of Thin Film Transistors)

  • 김보현;이승렬;안경민;강승모;양용호;안병태
    • 한국재료학회지
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    • 제19권1호
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    • pp.37-43
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    • 2009
  • Silicon dioxide as gate dielectrics was grown at $400^{\circ}C$ on a polycrystalline Si substrate by inductively coupled plasma oxidation using a mixture of $O_2$ and $N_2O$ to improve the performance of polycrystalline Si thin film transistors. In conventional high-temperature $N_2O$ annealing, nitrogen can be supplied to the $Si/SiO_2$ interface because a NO molecule can diffuse through the oxide. However, it was found that nitrogen cannot be supplied to the Si/$SiO_2$ interface by plasma oxidation as the $N_2O$ molecule is broken in the plasma and because a dense Si-N bond is formed at the $SiO_2$ surface, preventing further diffusion of nitrogen into the oxide. Nitrogen was added to the $Si/SiO_2$ interface by the plasma oxidation of mixtures of $O_2/N_2O$ gas, leading to an enhancement of the field effect mobility of polycrystalline Si TFTs due to the reduction in the number of trap densities at the interface and at the Si grain boundaries due to nitrogen passivation.

Influence of nano alumina coating on the flexural bond strength between zirconia and resin cement

  • Akay, Canan;Tanis, Merve Cakirbay;Mumcu, Emre;Kilicarslan, Mehmet Ali;Sen, Murat
    • The Journal of Advanced Prosthodontics
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    • 제10권1호
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    • pp.43-49
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    • 2018
  • PURPOSE. The purpose of this in vitro study is to examine the effects of a nano-structured alumina coating on the adhesion between resin cements and zirconia ceramics using a four-point bending test. MATERIALS AND METHODS. 100 pairs of zirconium bar specimens were prepared with dimensions of $25mm{\times}2mm{\times}5mm$ and cementation surfaces of $5mm{\times}2mm$. The samples were divided into 5 groups of 20 pairs each. The groups are as follows: Group I (C) - Control with no surface modification, Group II (APA) - airborne-particle-abrasion with $110{\mu}m$ high-purity aluminum oxide ($Al_2O_3$) particles, Group III (ROC) - airborne-particle-abrasion with $110{\mu}m$ silica modified aluminum oxide ($Al_2O_3+SiO_2$) particles, Group IV (TCS) - tribochemical silica coated with $Al_2O_3$ particles, and Group V (AlC) - nano alumina coating. The surface modifications were assessed on two samples selected from each group by atomic force microscopy and scanning electron microscopy. The samples were cemented with two different self-adhesive resin cements. The bending bond strength was evaluated by mechanical testing. RESULTS. According to the ANOVA results, surface treatments, different cement types, and their interactions were statistically significant (P<.05). The highest flexural bond strengths were obtained in nano-structured alumina coated zirconia surfaces (50.4 MPa) and the lowest values were obtained in the control group (12.00 MPa), both of which were cemented using a self-adhesive resin cement. CONCLUSION. The surface modifications tested in the current study affected the surface roughness and flexural bond strength of zirconia. The nano alumina coating method significantly increased the flexural bond strength of zirconia ceramics.

Processing of Silica-Bonded Silicon Carbide Ceramics

  • Chun, Yong-Seong;Kim, Young-Wook
    • 한국세라믹학회지
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    • 제43권6호
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    • pp.327-332
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    • 2006
  • The effect of the processing parameters on the sintered density and strength of silica-bonded SiC (SBSC) ceramics was investigated for three types of batches with different particle sizes. The SBSC ceramics were fabricated by an oxidation-bonding process. The process involves the sintering of powder compacts in air so that the SiC particles bond to each other by oxidation-derived $SiO_2$ glass or cristobalite. A finding of this study was that a higher flexural strength was obtained when the starting powder was smaller. When a ${\sim}0.3_{-{\mu}m}$ SiC powder was used as a starting powder, a high strength of $257{\pm}42\;MPa$ was achieved at a relative density of ${\sim}80%$.

DFT Study for Adsorption and Decomposition Mechanism of Trimethylene Oxide on Al(111) Surface

  • Ye, Cai-Chao;Sun, Jie;Zhao, Feng-Qi;Xu, Si-Yu;Ju, Xue-Hai
    • Bulletin of the Korean Chemical Society
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    • 제35권7호
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    • pp.2013-2018
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    • 2014
  • The adsorption and decomposition of trimethylene oxide ($C_3H_6O$) molecule on the Al(111) surface were investigated by the generalized gradient approximation (GGA) of density functional theory (DFT). The calculations employed a supercell ($6{\times}6{\times}3$) slab model and three-dimensional periodic boundary conditions. The strong attractive forces between $C_3H_6O$ molecule and Al atoms induce the C-O bond breaking of the ring $C_3H_6O$ molecule. Subsequently, the dissociated radical fragments of $C_3H_6O$ molecule oxidize the Al surface. The largest adsorption energy is about -260.0 kJ/mol in V3, V4 and P2, resulting a ring break at the C-O bond. We also investigated the decomposition mechanism of $C_3H_6O$ molecules on the Al(111) surface. The activation energies ($E_a$) for the dissociations V3, V4 and P2 are 133.3, 166.8 and 174.0 kJ/mol, respectively. The hcp site is the most reactive position for $C_3H_6O$ decomposing.

50 nm 이상의 CMOS 기술에 이용되는 Spin-on Dielectric 박막 형성과 그 특성에 미치는 전구체의 영향 (The Effects of Precursor on the Formation and Their Properties of Spin-on Dielectric Films Used for Sub-50 nm Technology and Beyond)

  • 이완규
    • 한국진공학회지
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    • 제20권3호
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    • pp.182-188
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    • 2011
  • 탄소가 없는 폴리실라잔 계와 탄소가 함유된 폴리메틸 실라잔 계 전구체를 실리콘 기판에 스핀코팅하고 $150^{\circ}C$, $400^{\circ}C$, $850^{\circ}C$에서 열처리하여 형성된 박막의 물리적 화학적 특성을 평가하였다. 프리에 변환 적외선 분광, 수축 율, 갭-충진, 식각속도 등을 평가하여 박막형성과 형성된 박막의 물리화학적 특성에 미치는 탄소의 영향을 고찰하였다. 탄소함유 전구체는 (탄소가 없는 전구체보다) $400^{\circ}C$에서 질소, 수소, 탄소의 휘발량이 더 적고 산소 흡수량이 더 적어서 (15.6%)보다 낮은 14.5% 두께 수축을 나타내었으나, $800^{\circ}C$에서는 휘발 량이 더 많고 산소 흡수량도 더 많아져 (19.4%)보다 높은 37.4% 두께 수축을 나타냈다. 프리에 변환 적외선 분광분석결과, 전구체내의 탄소는 Spin-on dielectric (SOD) 박막으로 하여금 Si-O 결합형성을 적게, 박막특성을 불균일하게, 그리고 화학 용액에 더 빨리 식각되도록 만들었다.

알루미나에 생체유리의 코팅시 결합의 특성 (Bonding Behavior of Bioglass Coated Alumina)

  • 김정구;김철영
    • 한국세라믹학회지
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    • 제27권7호
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    • pp.925-933
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    • 1990
  • The possible use of bioglass,, which is one of the surface active biomaterials, as implants materials has drawn great attention due to their ability to bond to human living tissue. In the present work, the investigation was carried out to find the bonding phenomena between alumina substrate and bioglass(45S5) or fluorine-containing bioglass(45S5$.$4F), and the properties of coated bioglass. The stable bonding between alumina and bioglass was formed when heat-treated at 1150$^{\circ}C$ for 120 minutes or at 1250$^{\circ}C$ for 30 minutes for the 45S5, and at 1150$^{\circ}C$ for 30 minutes for the 45S5$.$4F. When bioglass coated alumina was heat-treated, great amount of Al was diffused into bioglass from alumina substrate. More Al was diffused into fluorine-containing bioglass than into bioglass without fluorine. At early stage of heat-tretment, the diffused alumina content was increased with the square root of time and it was also increased with the thickness of coating layer and heat-treatment temperatures. The alumina content became constant after its saturation for longer heat-treatment time. Coated bioglasses were crystallized to Na2O$.$CaO$.$3SiO2 when heat-treated at lower temperature, and to CaO$.$SiO2 at higher temperature.

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탄화규소 결정상의 종류가 탄화규소 표면에 ZSM-5가 형성되는데 미치는 영향 (Effect of SiC Crystal Phase on Growing ZSM-5 on the Surface of SiC)

  • 정은진;이윤주;김영희;권우택;신동근;김수룡
    • Korean Chemical Engineering Research
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    • 제53권2호
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    • pp.247-252
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    • 2015
  • ${\alpha}$-상 과 ${\beta}$-상 두 가지 종류의 탄화규소(SiC) 입자 표면에 수열 합성 방법으로 ZSM-5 결정을 형성하였다. SiC는 $50{\mu}m$ 이상이 되는 크기의 입자를 사용하였으며, ZSM-5 결정이 SiC 표면에서부터 성장하도록 유도하기 위하여 합성 단계에 앞서 SiC 표면에 산화층을 형성하였으며, 수열합성 온도와 시간을 변화시켜 보았다. 그 결과 ${\beta}$-SiC는 $900^{\circ}C$ 조건에서도 산화막이 형성되었으며, 특히 $150^{\circ}C$ 합성 조건에서 ZSM-5가 ${\beta}$-SiC 표면에서부터 성장하였음이 뚜렷이 관찰되었다. $200^{\circ}C$ 조건에서는 ZSM-5의 결정의 크기가 성장할 뿐 아니라, 시간의 증가에 따라 결정의 형태가 뚜렷해지고 SiC 표면에 도포되는 양이 증가하는 것을 확인할 수 있었다.

수열합성법으로 성장된 ZnO 박막의 열처리에 따른 특성 변화

  • 김민수;임광국;김소아람;남기웅;이재용;노근태;이동율;김진수;김종수;이주인;임재영
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.78-78
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    • 2011
  • 수열합성법을 이용하여 Si(111) 기판에 ZnO 박막을 성장하였다. ZnO 박막의 성장을 위한 씨앗층은 plasma-assisted molecular beam epitaxy (PA-MBE)를 이용하였다. 씨앗층의 표면 거칠기(root-mean-square roughness)는 2.5 nm이고, 씨앗층 위에 성장된 ZnO 박막은 다양한 크기의 입자들로 이루어져 있었으며 두께는 약 $1.8{\mu}m$로 매우 일정하였다. 배향성을 알아보기 위하여 texture coefficient (TC)를 계산해 보았다. TC(100)과 TC(200)은 a-축 배향성을, TC(002)는 c-축 배향성을 나타내는데, c-축으로 더 우세한 배향성(99.5%)을 보였다. TC 비율(TCa-axis/TCc-axis)은 열처리 온도를 $700^{\circ}C$까지 올렸을 때, 점차적으로 증가하였고, 그 이상의 열처리 온도(< $900^{\circ}C$)에서는 급격히 감소하였다. 잔류응력과 Zn와 O의 bond length도 유사한 경향을 보였다. $700^{\circ}C$까지 열처리 온도가 증가함에 따라, 잔류응력은 증가하였고 bond length는 감소하였다. Near-band-edge emission (NBE)의 피크 강도는 열처리 온도가 $700^{\circ}C$까지 증가함에 따라 점차적으로 증가하였다. 열처리 온도가 $800^{\circ}C$ 이상 증가함에 따라 deep-level emission (DLE)가 적색편이(red-shift)하였다. $700^{\circ}C$로 열처리를 한 ZnO 박막이 가장 우세한 (002)방향의 배향성을 보였을 뿐만 아니라 가장 큰 발광효율 증가를 보였다.

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The Effect of Low-Temperature Carbon Encapsulation on Si Nanoparticles for Lithium Rechargeable Batteries

  • Jung, Jaepyeong;Song, Kyeongse;Kang, Yong-Mook
    • Bulletin of the Korean Chemical Society
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    • 제34권7호
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    • pp.2162-2166
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    • 2013
  • The tailored surface modification of electrode materials is crucial to realize the wanted electronic and electrochemical properties. In this regard, a dexterous carbon encapsulation technique can be one of the most essential preparation methods for the electrode materials for lithium rechargeable batteries. For this purpose, DL-malic acid ($C_4H_6O_5$) was here used as the carbon source enabling an amorphous carbon layer to be formed on the surface of Si nanoparticles at enough low temperature to maintain their own physical or chemical properties. Various structural characterizations proved that the bulk structure of Si doesn't undergo any discernible change except for the evolution of C-C bond attributed to the formed carbon layer on the surface of Si. The improved electrochemical performance of the carbon-encapsulated Si compared to Si can be attributed to the enhanced electrical conductivity by the surface carbon layer as well as its role as a buffering agent to absorb the volume expansion of Si during lithiation and delithiation.