• Restorative Dentistry and Endodontics
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• 제24권1호
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• pp.156-165
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• 1999

The purpose of this study was to evaluate the effect of surface treatments on the shear bond strength between new and old composites. Circular cavities prepared on the center of acrylic resin mold and the prepared cavities were filled with composite resin. They randomly assigned into control group and 8 groups according to the difference in surface treatments of old composites; Control group: no surface treatment, Group 1: surface treated with #120 SiC paper & bonding agent, Group 2: surface treated with #400 SiC paper & bonding agent, Group 3: surface treated with #120 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 4: surface treated with #400 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 5: surface treated with #120 SiC paper, primer & bonding agent, Group 6: surface treated with #400 SiC paper, primer & bonding agent, Group 7: surface treated with #120 SiC paper, 32% $H_3PO_4$, primer & bonding agent, Group 8: surface treated with #400 SiC paper, 32% $H_3PO_4$, primer & bonding agent. New composites were applicated on the old composites of experimental groups. The shear bond strengths for the experimental specimen were measured and the results were analyzed by using one way ANOVA. The observations of surface morphology after SiC paper roughening and debonded surface morphology after shear bond strength test were done by SEM. The results were as follows; 1. Shear bond strengths for specimens roughened with #120 SiC paper matching with the particle size of coarse diamond bur were significantly higher than those for the specimens with #400 SiC paper(P<0.05). By SEM, the surface of the specimens roughened with #120 SiC paper was more irregular than the specimens with #400 SiC paper. 2. Shear bond strengths for specimens treated with 32% $H_3PO_4$ etchant, primer, bonding resin were significantly higher than those for specimens treated with 32% $H_3PO_4$ and bonding resin(P<0.05). 3. Shear bond strengths for the specimens treated with 32% $H_3PO_4$ etchant and bonding resin were significantly higher than those for specimens treated with only bonding resin(P<0.05). There was no remarkable change of surface morphology after 32% $H_3PO_4$ etching. 4. It was possible to observe mixed fracture patterns (the cohesive fracture of old composite and the adhesive fracture between old and new composite) in the specimens roughened with #120 SiC paper, but almost adhesive fracture in the specimens roughened with #400 SiC paper.

• 한국전기전자재료학회논문지
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• 제15권6호
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• 전자통신동향분석
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• 제36권3호
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• Bulletin of the Korean Chemical Society
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• 제24권6호
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• pp.832-836
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• 2003

To extend the knowledge of triple bonding between group 6 transition metal and heavier group 14 elements, the structural and bonding aspects of ($η^5-C_5H_5$)$(CO)_2$M≡ER (M = Cr, Mo, W; E = Si, Ge, Sn, Pb) are investigated by hybrid density functional calculations at the B3PW91 level. Substituent effects are also investigated with R = H, Me, $SiH_3$, Ph, $C_6H_3-2,6-Ph_2$, $C_6H_3-2,6-(C_6H_2-2,4,6-Me_3)_2$, and $C_6H_3-2,6-(C_6H_2-2,4,6- iPr_3)_2$.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 춘계학술대회 논문집
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• pp.393-396
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• 2005

This paper is concerned with the drawing process of $Al-1\%Si$ bonding wire. In this study, the finite-element model established in previous work was used to analyze the effect of various forming parameters, which included the reduction in area, the semi-die angle, the aspect ratio, the inter-particle spacing and orientation angle of the fine Si particle in drawing processes. The finite-element results gave the consolidation condition. From the results of analysis, the effects of each forming parameter were determined. It is possible to obtain the Important basic data which can be guaranteed in the fracture prevention of $Al-1\%Si$ wire by using FE-Simulation.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.779-784
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• 2001

In this work, we studied the characteristics of nitride films for the optimization of PMD(pro-metal dielectric) linear process, which can be applied to the recent semiconductor manufacturing process. We split the deposit condition of nitride films into four parts such as PO(protect overcoat) nitride, baseline, low hydrogen and high stress and low hydrogen, respectively. We tried to find out correlation between BPSG deposition and densification. In order to analyze the changes of Si-H and Si-NH-Si bonding density, we used FTIR area method. We also investigated the crack generation on wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation to judge whether the deposited films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.38-41
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• 2001

In this work, we have been studied the characteristics of each nitride film for the optimization of PMD(pre-metal dielectric) liner nitride process, which can applicable in the recent semiconductor manufacturing process. The deposition conditions of nitride film were splited by PO (protect overcoat) nitride, baseline, low hydrogen, high stress and low hydrogen, respectively. And also we tried to catch hold of correlation between BPSG(boro-phospho silicate glass) deposition and densification. Especially, we used FTIR area method for the analysis of density change of Si-H bonding and Si-NH-Si bonding, which decides the characteristics of nitride film. To judge whether the deposited films were safe or not, we investigated the crack generation of wafer edge after BPSG densification, and the changes of nitride film stress as a function of RF power variation.

• 대한화학회지
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• 제38권1호
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• pp.55-60
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• 1994

유기규소 중합반응에서 나타나는 중간체 $Cp_2TiSiHPh(1),\;[Cp_2Ti]_2[{\mu}-HSi(HPh)][{\mu}-H]$ (2) 그리고 $[Cp_2TiSiH_2Ph]_2$ (3)화합물들의 전자구조를 EHT방법으로 연구하였다. 1 화합물의 안정한 구조는 Cs로 변형된 형태이고 $SiH_2$의 회전에너지는 약 14 kcal/mol로 나타났다. 전자결핍분자인 2와 3 화합물의 결합특성을 전자구조를 통하여 규명하였다. 또한 Ti금속이 Si-H의 $\sigma$ 결합과 작용할 가능성을 설명하였다.

• 마이크로전자및패키징학회지
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• 제20권2호
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• pp.11-15
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• 2013

The wafer bonding process becomes a flexible approach to material and device integration. The bonding strength in 3-dimensional process is crucial factor in various interface bonding process such as silicon to silicon, silicon to metals such as oxides to adhesive intermediates. A measurement method of bonding strength was proposed by utilizing AFM applied CNT probe tip which indicated the relative simplicity in preparation of sample and to have merit capable to measure regardless type of films. Also, New Tool was utilized to measure of tip radius. The cleaned $SiO_2$-Si bonding strength of SPFM indicated 0.089 $J/m^2$, and the cleaning result by RCA 1($NH_4OH:H_2O:H_2O_2$) measured 0.044 $J/m^2$, indicated negligible tolerance which verified the possibility capable to measure accurate bonding strength. And it could be confirmed the effective bonding is possible through SPFM cleaning.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$