• Journal of Sensor Science and Technology
• /
• v.11 no.2
• /
• pp.102-110
• /
• 2002

The chemical and mechanical characteristics of a new surface modifier, dichlorodimethysilane (DDMS, $(CH_3)_3SiCl_2$), for stiction-free polysilicon surfaces are reported. The main strategy is to replace the conventional monoalkyltrichlorosilane(MTS, $RSiCl_3$) such as octadecyltrichlorosilane (ODTS) or 1H,1H,2H,2H-perfluorodecyltrichlorosilane (FDTS) with dialkyldichlorosilane (DDS, $R_2SiCl_2$) with twit short chains, especially DDMS. DDMS, with shorter chains in aprotic media, rapidly deposits on the chemically oxidized polysilicon surface at room temperature and successfully prevents long cantilevers of 3 mm in length from in-use as well as release stiction. DDMS-modified polysilicon surfaces exhibit satisfactory hydrophobicity, long term stability and thermal stability, which are comparable to those of FDTS. DDMS as an alternative to FDTS and ODTS provides a few valuable advantages; ease in handling and long-term storage in solution, low temperature-dependence and low cost. In addition to the new modifier molecule, the simplified process of direct release right after washing the modified surface with isooctane was proposed to cut the processing time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.182-185
• /
• 2002

자기정렬구조의 실리콘-게르마늄 이종접합 트랜지스터에서 $f_{max}$를 높이기 위한 방안으로 베이스의 저항 값을 감소시키고자 외부 베이스에 실리콘 및 실리콘-게르마늄 박막을 저온에서 선택적으로 성장할 수 있는 방법을 연구하였다. RPCVD를 이용하여 $SiH_{2}Cl_{2}$과 $GeH_{4}$를 소스 가스로 하고 HCI을 첨가하여 선택성을 향상시킴으로써 $675\sim725^{\circ}C$의 저온에서도 실리콘 및 실리콘-게르마늄의 선택적 에피성장이 가능하였다. 고온 공정에 주로 이용되는 $SiH_{2}Cl_{2}$를 이용한 실리콘 증착은 $675^{\circ}C$에서 열분해가 잘 이루어지지 않고 HCl의 첨가에 의한 식각반응이 동시에 진행되어 실리콘 기판에서도 증착이 진행되지 않으나 $700^{\circ}C$ 이상에서는 HCI을 첨가한 경우에 한해서 선택성이 유지되면서 실리콘의 성장이 이루어졌다, 반면 실리콘-게르마늄막은 실리콘에 비해 열분해 온도가 낮고 GeO를 형성하여 잠입시간을 지연하는 효과가 있는 게르마늄의 특성으로 인해 선택성이나 증착속도 모두에서 유리하였으나 실리사이드 공정시에 표면으로 게르마늄이 석출되는 현상 등의 저항성분이 크게 작용하여 실리콘-게르마늄막 만으로는 외부 베이스에의 적용은 적절하지 않았다. 그러나 실리콘막을 실리콘-게르마늄막 위에 Cap 층으로 증착하거나 실리콘막 만으로 외부 베이스에 선택적으로 증착하여 베이스의 저항을 70% 가량 감소시킬 수 있었다.

• Bulletin of the Korean Chemical Society
• /
• v.32 no.1
• /
• pp.213-218
• /
• 2011

The scope of homogeneous Lewis acid-catalyzed benzo[N,N]-heterocyclic condensation was expanded to include the use of various metal salts not reported in the literature and $SnCl_2{\cdot}2H_2O$ was finally selected. Among various solid supports activated with $SnCl_2$, heterogeneous $SnCl_2/SiO_2$ proved to be the most effective and significantly higher conversions were achieved compared to $SnCl_2{\cdot}2H_2O$ itself. The results of TG-DTA and BET indicated that dispersed $SnCl_2$ coordinates with surface hydroxyl groups of silica leading to formation of stable Lewis acid sites. Low catalyst loading, operational simplicity, practicability and applicability to various substrates render this eco-friendly approach as an interesting alternative to previously applied procedures.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.211.1-211.1
• /
• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• Journal of the korean academy of Pediatric Dentistry
• /
• v.27 no.2
• /
• pp.370-378
• /
• 2000

The composite restorative resins have their insufficient resistance to wear. The subsurface degradation within the restoration is considered to be associated with wear. The aim of this study was to evaluate the resistance to degradation of six commercial composite resins in an alkaline solution. The brands studied were Clearfil APX(Kuraray), Heliomolar(Vivadent), Surefil(Dentsply), TPH(Dentsply), Tetric Ceram(Vivadent), and Z100(3M). Preweighed discs of each brand were exposed 0.1N NaOH solution at $60^{\circ}C$. After 14 days they were removed, neutralized with HCL, washed with water and dried to constant mass at $60^{\circ}C$. Resistance to degradation was evaluated on the basis of the following parameters: (a) mass loss(%) - determined from pre-and post-exposure specimen weights; (b) Si loss (ppm)-obtained from ICP-AE analysis of solution exposed to specimens; and (c) degradation depth$({\mu}m)$ - measured microscopically (SEM) from polished circular sections of exposed specimens. The results were as follows: 1. The mass loss was in descending order by Z100, TC H, S, CL, TPH and in the range of $0.45\sim3.64%$ 2. The degradation layer depth was in descending order by H, Z100, S, TC, TPH, CL and in the range of $10.85\sim73.38{\mu}m$ 3. For the Si concentration, Z100 was the highest of all 4. The highly significant correlation(r=0.81, p<0.05) was observed between mass loss and degradation depth. 5. Under scanning electronmicroscopy, the degradation of connection between resin matrix and fillers was observed 2 weeks after soaking in NaOH solution.

• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.62 no.4
• /
• pp.293-303
• /
• 2017

To elucidate the physiological responses of rice plants to the essential mineral silicon (Si), we assessed the effects of treatments with Si, nitrogen ($NH_4NO_3$; ammonium nitrate), and calcium ($CaCl_2$; calcium chloride), independently or in combination on mineral uptake rates and levels of the hormones abscisic acid (ABA), gibberellin ($GA_1$) and jasmonic acid (JA). We found that nitrogen and calcium uptake was inhibited by Si application. However, solo application of nitrogen or calcium did not affect Si uptake. Compared to the untreated plants, the application of Si, $NH_4NO_3$ or $CaCl_2$ increased the endogenous hormone levels in treated plants. In particular, the concentrations of $GA_1$ and JA increased significantly after the application of Si or $NH_4NO_3$. The level of $GA_1$ observed after a treatment (solo or combine) with Si, and $NH_4NO_3$ was higher than that of the control. By contrast, independent application of $CaCl_2$ or a combined treatment with Si and $CaCl_2$ did not alter $GA_1$ levels. The highest level of $GA_1$ was present in plants given a combination treatment of Si and $NH_4NO_3$. This effect was observed at all time points (6 h, 12 h and 24 h). Endogenous JA contents were higher in all treatments than the control. In particular, a combination treatment with Si and $NH_4NO_3$ significantly increased the JA levels in plants compared to other treatments at all time points. A small increase in JA levels was observed after 6 h in plants given the $CaCl_2$ treatment. However, JA levels did not differ between plants given a $CaCl_2$ treatment and controls after 12 h or 24 h of exposure. We conclude that treatment with $CaCl_2$ alone does not affect endogenous JA levels in the short term. Endogenous ABA contents did not show any differences among the various treatments.

• Journal of the Korean Chemical Society
• /
• v.55 no.4
• /
• pp.570-574
• /
• 2011

Large colorless single crystals of analcime with diameters up to 0.20 mm have been synthesized from gels with the composition of $3.00SiO_2$ : $1.50NaAlO_2$ : 8.02NaOH : $454H_2O$ : 5.00TEA. The fully $Na^+$-exchanged analcime have been prepared with aqueous 0.1 M NaCl (pH adjusted from 6 to 11 by dropwise addition of NaOH). The single-crystal structure of hydrated $|Na_{0.94}(H_2O)|[Si_{2.06}Al_{0.94}O_6]$-ANA per unit cell, a=13.703(3) ${\AA}$, has been determined by single-crystal X-ray diffraction technique in the orthorhombic space group Ibca at 294 K. The structure was refined using all intenties to the final error indices (using only the 1,446 reflections for which $F_o$ > $4{\sigma}(F_o))R_1/wR_2$ = 0.054/0.143. About 15 $Na^+$ ions are located at three nonequivalent positions and octahedrally coordinated. The chemical composition is $Na_{0.94}(H_2O)Si_{2.06}Al_{0.94}O_6$. The Si/Al ratio of synthetic analcime is 2.19 determined by the occupations of cations, 14.79, in the single-crystal determination work.

• Proceedings of the Korea Association of Crystal Growth Conference
• /
• 1998.09a
• /
• pp.1-20
• /
• 1998

Processing of thin films by chemical vapor deposition (CVD) is accompanied by chemical reactions, in which the rigorous kinetic analysis is difficult to achieve. In these conditions, thermodynamic calculation leads to better understanding of the CVD process and helps to optimise the experimental parameters to obtain a desired product. A CVD phase diagram has been used as guide lines for the process. By determining the effect of each process variable on the driving force for deposition, the thermodynamic limit for the substrate temperature that diamond can deposit is calculated in the C-H system by assuming that the limit is defined by the CVD diamond phase diagram. The addition of iso-supersaturation ratio lines to the CVD phase diagram in the Si-Cl-H system provides additional information about the effects of CVD process variables.

• Journal of the Korean Chemical Society
• /
• v.30 no.6
• /
• pp.526-531
• /
• 1986

The stability constants of 1,15-diaza-3,4:12,13-dibenzo-5,8,11-trioxacycloheptadecane (NenOdien H$_4$, L) with transition metal ions such as $Co^{2+},\;Ni^{2+},\;Cu^{2+},\;and\;Zn^{2+}$ have been determined by potentiometry in 95% methanol solution at 25$^{\circ}$C. The complex formation of the NenOdien $_4$ with the transition metal ions depends on the basicity of the donor atoms. The order of complex stability was Co(II) < Ni(II) < Cu(II) > Zn(II). The geometries of the complexes in solid state were discussed by visible-near infrared and infrared spectrophotometry, elemental analysis and electro-conductivity. The results suggest that the geometries of the solid complexes are octahedral for $[CoL_2(OH_2)Cl]Cl{\cdot}2H_2O$, $[NiL_2(OH_2)Cl]Cl{\cdot}2H_2O$, and $[ZnLCl_2]{\cdot}\frac{1}{2}H_2O$ and square pyramidal for [CuLCl]Cl, respectively.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.24 no.11
• /
• pp.1464-1469
• /
• 2000

The effects of SiCl$_4$addition on flame structures have been studied in flame hydrolysis deposition (FHD) processes using Coherent anti-Stokes Raman spectroscopy (CARS) and planar laser induced fluorescence (PLIF) to measure temperatures and OH concentrations, respectively. The results demonstrate that even a small amount of SiCl$_4$ addition can change thermal and chemical structures of H$_2$/O$_2$ diffusion flames. When SiCl$_4$ is added to a flame temperature decreases in non-reacting zone due to the increases in both specific heat and density of the gas mixture, while flame temperature increase in particle formation zone due to the heat release through hydrolysis and oxidation reactions of SiCl$_4$. It is also found that OH concentration decreases dramatically in particle formation zone where temperatures increase. This can be attributed to consumption of oxidative species and generation of HCl during silica formation.