• Title/Summary/Keyword: Si-C bond

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저온 증착된 게이트 절연막의 안정성 향상을 위한 플라즈마 처리

  • Choe, U-Jin;Jang, Gyeong-Su;Baek, Gyeong-Hyeon;An, Si-Hyeon;Park, Cheol-Min;Jo, Jae-Hyeon;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.342-342
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    • 2011
  • 산화막은 반도체 공정 중 가장 핵심적이며 기본적인 물질이다. 반도체 소자에서 내부의 캐리어들의 이동을 막고 전기를 절연시켜주는 절연체로서 역할을 하게 된다. 실제로 제작된 산화막에서는 dangling bond 혹은 내부에 축적되는 charge들의 의해 leakage가 생기게 되고 그에 따라 산화막의 특성은 저하되게 된다. 내부에서 특성을 저하시키는 defect을 감소시키기 위해 Plasma Treatment에 따른 특성변화를 관찰하였다. 본 연구에서는 최적화 시킨 Flexible TFT제작을 위해 저온에서 Silicon Oxide로 형성한 Gate Insulator에 각각 N2O, H2, NH3가스를 주입 후 Plasma처리를 하였다. 특성화 시킨 Gate Insulator를 이용하여 MIS(Metal-Insulator-Semiconductor)구조를 제작 후 C-V curve특성변화, Dit의 감소, Stress bias에 따른 stability를 확인 하였다.

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Theoretical Study on the Conformations of Homooxacalix[4]arenes

  • Ham, Si-Hyun
    • Bulletin of the Korean Chemical Society
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    • v.25 no.12
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    • pp.1911-1916
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    • 2004
  • The conformational preference of tetrahomodioxacalix[4]arenes with three different para substituents on the phenolic ring has been investigated by using ab initio molecular orbital theory (RHF/6-31$G^{\ast}$) and density functional theory (B3LYP/6-31$G^{\ast}$). The stability order is predicted to be cone > C-1,2-alternate > partial cone > 1,3-alternate > COC-1,2-alternate. The distorted cone conformation is found to be most stable in a gas phase and the calculated results are in agreement with the reported $^1$H NMR and X-ray experimental observations. The substitution of methylene with dimethyleneoxa bridges increases the size of the annulus of the molecule, its conformational mobility, and the number of hydrogen bonding patterns. The thermodynamic stability and the conformational characteristics of tetrahomodioxacalix[4]arenes are discussed in regards of the number of phenolic hydrogen bonding patterns and the polarity of a molecule. The substituent effects on the para position of the phenolic ring are also introduced.

Fabrication and characterization of silica-titania hybrid film using silane treated $TiO_2$ sol (실리카-타이타니아 하이브리드 코팅막의 제조 및 특성평가)

  • Han, Dong-Hee;Kang, Dong-Jun;Kim, Suk-Joon;Kang, Dong-Pil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.553-554
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    • 2007
  • By sol-gel method, we have fabricated silica-titania hybrid film using silane treated colloidal $TiO_2$ and characterized the film through FT-IR, TGA, UV-VIS and AFM. The silica-titania hybrid film showed Ti-O-Si chemical bond at FT-IR peak of $910{\sim}940cm^{-1}$. The fabricated hybrid film showed thermal stability of around $350^{\circ}C$(5wt% loss temperature) and transparency more than 90%. In addition, the good surface smoothness was confirmed by AFM. Therefore, the silica-titania hybrid film with outstanding properties can be potential for application in electronics and displays.

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Study on Polishing Mechanism of Thermal Oxide Film after High-Temperature Conditioning (고온 패드 컨디셔닝 후 열산화막 연마 메커니즘 연구)

  • Choi, Gwon-Woo;Kim, Nam-Hoon;Seo, Yong-Jin;Lee, Woo-Sun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.193-194
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    • 2005
  • By the high-temperature pad conditioning process: The slurry residues in pores and grooves of the polishing pad were clearly removed. These clear pores and enlarged grooves made the slurry attack the oxide surface. The changed slurry properties by high-temperature pad conditioning process made the oxide surface hydro-carbonate to be removed easily.

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Testbed of Power MOSFET Aging Including the Measurement of On-State Resistance (전력용 MOSFET의 온-상태 저항 측정 및 노화 시험 환경 구축)

  • Shin, Joonho;Shin, Jong-Won
    • The Transactions of the Korean Institute of Power Electronics
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    • v.27 no.3
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    • pp.206-213
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    • 2022
  • This paper presents setting up a laboratory-scale testbed to estimate the aging of power MOSFET devices and integrated power modules by measuring its on-state voltage and current. Based on the aging mechanisms of the component inside the power module (e.g., bond-wire, solder layer, and semiconductor chip), a system to measure the on-state resistance of device-under-test (DUT) is designed and experimented: a full-bridge circuit applies current stress to DUT, and a temperature chamber controls the ambient temperature of DUT during the aging test. The on-state resistance of SiC MOSFET measured by the proposed testbed was increased by 2.5%-3% after 44-hour of the aging test.

Mn K-Edge XAS Analyses of $Zn_{2-x}Mn_xSiO_4$ Phosphors ($Zn_{2-x}Mn_xSiO_4$ 형광체의 망간 K 흡수단 엑스선 흡수 분광 분석)

  • Choi, Yong Gyu;Lim, Dong Sung;Kim, Kyong Hon;Sohn, Kee Sun;Park, Hee Dong
    • Journal of the Korean Chemical Society
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    • v.43 no.6
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    • pp.636-643
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    • 1999
  • Green-emission intensity of a $Zn_{2-x}Mn_xSiO_4$ phosphor, which is a potential candidate as a green component in PDP device, significantly increases provided that the compound is additionally heat treated at 900$^{\circ}C$ after solid state reaction at 1300$^{\circ}C$. In order to verify origin of such an intensity enhancement after the additional heat treatment in association with the electronic and local structural change at around Mn ions, the Mn K-edge X-ray absorption spectra were recorded. From the analyses of the preedge peak corresponding to $1s{\rightarrow}3d$ bound state transition and XANES spectrum, it is known that most Mn ions are in +2 oxidation state and substitute Zn ion site regardless of the thermal treatment. In addition, EXAFS analyses revealed that Mn ions formed $MnO_4$ tetrahedra with the Mn-O bond length shortened by 0.01${\AA}$ and with reduced Debye-Waller factor in the thermally treated sample.

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Effects of Cavity Configuration on Bond Strength and Microleakage of Composite Restoration (와동의 형태에 따른 복합레진의 결합강도 및 변연누출에 관한 연구)

  • Choi, Seung-Mo;Choi, Gi-Woon;Choi, Kyoung-Kyu;Park, Sang-Jin
    • Restorative Dentistry and Endodontics
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    • v.27 no.5
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    • pp.479-487
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    • 2002
  • 복합레진의 중합시 발생하는 수축과 응력은 와동의 형태에 의하여 영향을 받으며 이는 수복재는 물론 접착계면의 물성을 결정하는 요인이 된다. 본 연구는 다양한 C-factor를 갖는 와동에 상아질 접착제 Clearfil SE Bond(Kuraray)를 도포하고 혼합형 복합레진인 Clearfil AP-X(Kuraray)와 미세혼합형의 Esthet-X(Dentsply)를 충전하여 미세인장강도 및 변연누출을 측정 평가함으로써 중합수축이 수복물과 치아계면에 미치는 영향을 평가하고자 시행하였다. 98개의 Bovine 하악전치를 이용하여 표면의 상아질을 #600 SiC paper로 연마한 대조군 및 와동의 넓이를 조절하여 C-factor 2.3, 3.0, 3.7이 되도록 제작한 실험군 와동에 복합레진을 충전한 후 37의 증류수에 24시간 보관하였다. 저속 diamond saw(Buehler)를 이용하여 1mm 두께로 수직절단 후 고속 diamond point(#104 Shofu)를 이용하여 단면적 1mm$^2$가 되도록 hour-glass모양으로 형성하여 시편을 제작하였고, Universal testing machine(EZ-Test; Shimadzu, Japan)에 시편을 부착하고 cross head speed 1mm/min으로 인장력을 가하여 미세인장 결합강도를 측정하였다. 각 C-factor에 따른 변연누출실험을 위하여 복합레진이 수복된 치아를 37$^{\circ}C$의 증류수에 24시간 보관한 후 와동을 제외한 부위에 nail varnish를 도포하고 3mol/L silver nitrate용액에 24시간 암보관한 다음 수세하여 현상액에 24시간 경과시킨 후 치아의 장축에 따라 절단하여 침투된 색소의 정도를 광학현미경상에서 40배로 관찰하였다. 각각의 실험결과는 ANOVA/Tukey's test 및 Kruskal-Wallis non-parametric independent analysis와 Mann-Whitney U test에 의하여 통계 분석하여 다음과 같은 결론을 얻었다. 1. 대조군에 있어서 혼합형 복합레진의 미세인장 결합강도는 미세혼합형에 비하여 높았으며, 실험군 사이에는 유의차를 보이지 않았다. 2.모든 복합레진의 미세인장 결합강도는 와동의 C-factor증가에 따라 감소하는 경향을 나타내었고, 혼합형 복합레진의 실험군은 대조군에 비하여 낮게 나타났으며, 미세혼합형 복합레진에서는 유의차를 보이지 않았다. 3. 절단측 및 치은측 변연부의 미세누출정도는 혼합형 복합레진이 미세혼합형에 비하여 대체로 높게 나타났다. 4. 모든 실험군에서 미세누출은 C-factor증가에 따라 증가하였고 절단측에 비하여 치은측 변연이 높게 나타났으나 통계학적 유의차는 보이지 않았다. C-factor의 변화에 대하여 필러함량과 탄성계수가 높은 혼합형 복합레진이 미세혼합형에 비하여 더 민감한 결과를 보인다. 이는 복합레진 수복시 재료의 선택과 중합수축의 적절한 조절이 중요한 요소임을 시사한다.

Optical Properties of SiNx Thin Films Grown by PECVD at 200℃ (200℃의 저온에서 PECVD 기법으로 성장한 SiNx 박막의 열처리에 따른 광학적 특성 변화 규명)

  • Lee, Kyung-Su;Kim, Eun-Kyeom;Son, Dae-Ho;Kim, Jeong-Ho;Yim, Tae-Kyung;An, Seung-Man;Park, Kyoung-Wan
    • Journal of the Korean Vacuum Society
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    • v.20 no.1
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    • pp.42-49
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    • 2011
  • We deposited $SiN_x$ thin films by using PECVD technique at $200^{\circ}C$ with various flow ratios of the $SiH_4/N_2$ gases. The photoluminescence measurements revealed that the maximum emission wavelength shifted to long wavelength as the ratio increased, however, positions of the several peak wavelengths, such as 1.9, 2.2, 2.4, and 3.1 eV, were independent on the ratio. Changes of the photoluminescence spectra were measured in the $N_{2}-$, $H_{2}-$, and $O_2$-annealed films. The luminescence intensities increased after the annealing process. In particular, the maximum emission wavelength shifted to short wavelength after $H_{2}-$ or $O_2$-annealing. But there were still several peaks on the spectra of all annealed films, several peak positions remained to be unchanged after the annealing. As for the light emission mechanism, we have considered the defect states of the Si- and N- dangling bonds in the $SiN_x$ energy gap, so that the energy transitions from/to the conduction/valence bands and the defect states in the gap were attributed to the light emission in the $SiN_x$ films. The experimental results point to the possibility of a Si-based light emission materials for flexible Si-based electro-optic devices.

Property Variation of Diamond-like Carbon Thin Film According to the Annealing Temperature (열처리에 따른 Diamond-like Carbon (DLC) 박막의 특성변화)

  • Park, Ch.S.;Koo, K.H.;Park, H.H.
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.1
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    • pp.49-53
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    • 2011
  • Diamond-like carbon (DLC) films is a metastable form of amorphous carbon containing a significant fraction of Sp3 bond. DLC films have been characterized by a range of attractive mechanical, chemical, tribological, as well as optical and electrical properties. In this study DLC films were prepared by the RF magnetron sputter system on $SiO_2$ substrates using graphite target. The effects of the post annealing temperature on the Property variation of the DLC films were examined. The DLC films were annealed at temperatures ranging from 300 to $500^{\circ}C$ using rapid thermal process equipment in vacuum. The variation of electrical property and surface morphology as a function of annealing treatment was investigated by using a Hall Effect measurement and atomic force microscopy. Raman and X-ray photoelectron spectroscopy analyses revealed a structural change in the DLC films.

Self-patterning Technique of Photosensitive La0.5Sr0.5CoO3 Electrode on Ferroelectric Sr0.9Bi2.1Ta2O9 Thin Films

  • Lim, Jong-Chun;Lim, Tae-Young;Auh, Keun-Ho;Park, Won-Kyu;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.41 no.1
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    • pp.13-18
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    • 2004
  • $La_{0.5}Sr_{0.5}CoO_3$ (LSCO) electrodes were prepared on ferroelectric $Sr_{0.9}Bi_{2.1}Ta_2O_9$(SBT) thin films by spin coating method using photosensitive sol-gel solution. Self-patterning technique of photosensitive sol-gel solution has advantages such as simple manufacturing process compared to photoresist/dry etching process. Lanthanum(III) 2-methoxyethoxide, Stronitium diethoxide. Cobalu(II)2-methoxyethoxide were used as starting materials for LSCO electrode. UV irradiation on LSCO thin films lead to decrease solubility by M-O-M bond formation and the solubility difference allows us to obtain self-patternine. There was little composition change of the LSCO thin films between before leaching and after leaching in 2-methoxyethanol. The lowest resistivity of LSCO thin films deposited on $SiO_2$/Si substrate was $1.1{\times}10^{-2}{\Omega}cm$ when the thin film was ennealed at $740^{\circ}C$. The values of Pr/Ps and 2Pr of LSCO/SBT/Pt capacitor on the applied voltage of 5V were 0.51, 8.89 ${\mu}C/cm^2$, respectively.