• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.407-414
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• 1996

We have investigated the effects of H atoms on thin film growth processes and surface reactions. In the oxidation of Si, Si surfaces are passivated against the $O_2$ adsorption by terminating dangling bonds with H atoms. Moreover, the existence of Si-H bonds on Si(100) surfaces enhances the structural relaxation of Si-O-Si bonds due to a charge transfer from Si-Si back bonds. In the heteroepitaxial growth of a Si/Ge/Si(100) system, H atoms suppress the segregation of Ge atoms into Si overlayers since the exchange of Ge atoms with Si atoms bound with H must be accompanied with breaking of Si-H bonds. However, 3-dimensional island growth is also promoted by atomic H irradiation, which is considered to result from the suppression of surface migration of adsorbed reaction species and from the lowering of step energies by the H termination of dangling bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Journal of the Korean institute of surface engineering
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• v.39 no.4
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• pp.160-165
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• 2006

Ni-SiC composite coating layers were prepared by electroplating method and their deposition rate, codeposition of SiC, morphology, surface roughness, hardness, wear and friction properties were investigated. It was found that the deposition rate and the codeposition of SiC in the composite coating layer increased with increasing concentration of SiC in the solution only at the early stage. Both of them reached certain maxima and then decreased with increasing concentration of SiC. Rough surface was obtained with increasing codeposition of SiC, which is probably due to the agglomeration of the SiC particle in the vicinity of surface. Vickers hardness increased with increasing codeposition of SiC and heat treatment at $300^{\circ}C$ in air for 1 hour. Wear volume decreased with increasing codeposition of SiC and friction coefficient increased with increasing codeposition of SiC at the early stage, and it became almost constant. Such wear and friction behaviors are desirable for the practical application.

• Restorative Dentistry and Endodontics
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• v.24 no.1
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• pp.156-165
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• 1999

The purpose of this study was to evaluate the effect of surface treatments on the shear bond strength between new and old composites. Circular cavities prepared on the center of acrylic resin mold and the prepared cavities were filled with composite resin. They randomly assigned into control group and 8 groups according to the difference in surface treatments of old composites; Control group: no surface treatment, Group 1: surface treated with #120 SiC paper & bonding agent, Group 2: surface treated with #400 SiC paper & bonding agent, Group 3: surface treated with #120 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 4: surface treated with #400 SiC paper, 32% $H_3PO_4$ & bonding agent, Group 5: surface treated with #120 SiC paper, primer & bonding agent, Group 6: surface treated with #400 SiC paper, primer & bonding agent, Group 7: surface treated with #120 SiC paper, 32% $H_3PO_4$, primer & bonding agent, Group 8: surface treated with #400 SiC paper, 32% $H_3PO_4$, primer & bonding agent. New composites were applicated on the old composites of experimental groups. The shear bond strengths for the experimental specimen were measured and the results were analyzed by using one way ANOVA. The observations of surface morphology after SiC paper roughening and debonded surface morphology after shear bond strength test were done by SEM. The results were as follows; 1. Shear bond strengths for specimens roughened with #120 SiC paper matching with the particle size of coarse diamond bur were significantly higher than those for the specimens with #400 SiC paper(P<0.05). By SEM, the surface of the specimens roughened with #120 SiC paper was more irregular than the specimens with #400 SiC paper. 2. Shear bond strengths for specimens treated with 32% $H_3PO_4$ etchant, primer, bonding resin were significantly higher than those for specimens treated with 32% $H_3PO_4$ and bonding resin(P<0.05). 3. Shear bond strengths for the specimens treated with 32% $H_3PO_4$ etchant and bonding resin were significantly higher than those for specimens treated with only bonding resin(P<0.05). There was no remarkable change of surface morphology after 32% $H_3PO_4$ etching. 4. It was possible to observe mixed fracture patterns (the cohesive fracture of old composite and the adhesive fracture between old and new composite) in the specimens roughened with #120 SiC paper, but almost adhesive fracture in the specimens roughened with #400 SiC paper.

• Journal of the Korean Ceramic Society
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• v.37 no.3
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• pp.280-287
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• 2000

Adsorption behavior and amount of phenolic resin followed silica (SiO2) formation onto silicon nitride(Si3N4) surface were investigated using electrokinetic sonic amplitude (ESA) technique and with UV spectrometer, to fabricate Si3N4/SiC nano-composite based on reaction between SiO2 formed and phenolic resin absorbed onto Si3N4 particle. The amount of SiO2 formed and carbon from phenolic resin absorbed onto Si3N4 surface were calculated quantitatively to adjust the reaction between SiO2 and phenolic resin, resulting in no residual SiO2 and carbon. As a result, pre-heated tempeature for optimized reaction was below 25$0^{\circ}C$, in which there was no residual SiO2 and carbon.

• Journal of the Semiconductor & Display Technology
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• v.7 no.3
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• pp.35-39
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• 2008

We study the interaction of acetone molecule $[(CH_3)_2CO]$ on Si(001) surface using density functional theory. An acetone molecule is adsorbed on a Si atom of the Si dimer of the Si(001) surface. The adsorption of the acetone molecule on the Si atom at lower height between the two Si atoms of the dimer is more favorable than that on the Si atoms at upper height. Then we calculate an energy variation of dissociation and four-membered ring structures of the acetone molecule adsorbed on the Si surface. Total energy difference between the two structures is about 0.05 eV, indicating that the two structures are almost equally stable. Energy barrier exists when a hydrogen atom is dissociated and adsorbed on the other Si atom of the dimer, while energy barrier does not exist when the adsorbed acetone molecule changes to four-membered ring structure, except for the rotation of the acetone molecule along z-direction. Therefore, four-membered ring structure is kinetically more favorable than the dissociation structure when the acetone molecule is adsorbed on the Si(001) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.190.1-190.1
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• 2015

Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1859-1864
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• 1990

The effect of H+ and OH- ion concentrations at doped Si semiconductor/pH buffer solution interfaces were investigated in terms of cyclic current-voltage characteristics. The effects of space charge on oppositely doped Si semiconductors, i.e., p-and n-Si semiconductors, can be effectively applied to study the pH effects and the slow surface states at the interfaces. The adsorptions of H+ and OH- inons on the doped Si semiconductor surfaces are physical adsorption rather than chemical adsorption. Adsorptive processes and charging effects of the slow surface states can be explained as the potential barrier variations and the related current-voltage characteristics at the interfaces. Under forward bias, the charged slow surface states on the p-and n-si semiconductor surface are donor and acceptor slow surface states, respectively. The effects of minority carriers on the slow surface states can be neglected at the doped Si semiconductor interfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.79-79
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• 2010

The electronic and adsorption structure of O-Phthaladehyde (OPA) on the H-Si(100) surface was investigated by using Near Edge X-ray Fine Structure (NEXAFS) and high resolution photoemission spectroscopy (HRPES). We confirmed that the OPA grown on the H-Si(100) surface showed good dependency with about 60 degree tilting angle using NEXAFS and a single O 1s peak by using HRPES. Hydrogen atom passivated on the Si(100) surface was found to be a seed for making one dimensional organic line that uses a chain reaction as the H-Si(100) surface was compared with the hydrogen free Si(100) surface. Through the spectral analysis, we will demonstrate 1-D directional formation of OPA on H-Si(100) surface using NEXAFS and HRPES.

• Korean Journal of Metals and Materials
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• v.47 no.11
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• pp.748-753
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• 2009

The surface morphology and the surface roughness of n-type SiC induced by wet-treatment using 45% KOH and buffered oxide etchant (BOE-1HF : $6H_2O$) were investigated by atomic force microscopy (AFM). While Si-face of SiC could be etched by alkali solutions such as KOH, acidic solutions such as BOE were hardly able to etch SiC. When the rough SiC samples were used, the surface roughness of etched sample was decreased after wet-treatment regardless of etchant, due to the planarization the of surface by widening of scratches formed by mechanical polishing. It was observed that the initial etching was affected by the energetically unstable sites, such as dangling bond and steps. However, when a relatively smooth sample was used, the surface roughness was rapidly increased after treatment at $180^{\circ}C$ for 1 hr and at room temperature for 4 hr by using KOH solution, resulting from the nano-sized structures such as pores and bumps. This indicates that porous SiC surface can be achieved by using purely chemical treatment.