• Title/Summary/Keyword: Si membrane

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Gas Permeation Characteristics of the Prepared SiC Membrane through Polyimide Carbonization Treatmemt (폴리이미드의 탄화 처리에 의한 SiC 분리막의 가스투과 특성)

  • Choi, Ho-Sang;Hwang, Gab-Jin;Kang, An-Soo
    • Korean Chemical Engineering Research
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    • v.43 no.1
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    • pp.66-70
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    • 2005
  • For the application in HI decomposition reaction of thermochemical water-splitting IS process, the carbonized membranes using the polymer material (polyimide) were prepared, and SiC membrane was also prepared by SiO treatment on those carbonized membranes. The weight change by the carbonation of polyimide was about 50%, and the weight decreased with an increase of carbonation temperature. The gas permeance ($H_2$ or $N_2$) of carbonized membrane decreased with an increase of carbonation temperature led to the pore closing. The gas permeance ($H_2$ or $N_2$) of SiC membrane increased with an increase of SiO treatment concentration, and the gas permeation mechanism was changed from the activiation energy flow to Knudsen flow.

Permeation Behavior of Semiconductor Rinsing Wastewater Containing Si Particles in Ultrafiltration System -I. Permeation Characteristics of Polysulfone Flat Plate Membrane- (Si 입자를 함유한 반도체 세정폐수의 한외여과 특성[I] -Polysulfone 평판막에 의한 투과분리-)

  • 곽순철;이석기;전재홍;남석태;최호상
    • Membrane Journal
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    • v.8 no.2
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    • pp.102-108
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    • 1998
  • Permeation behavior of the semiconductor rinsing wastewater containing Si particles was examined by ultrafiltration using the polysulfone plate membrane. The permeation flux was gradually decreased with time. It was due to the growth of cake deposited on the membrane surface and the pore plugging by Si particles. Permeation flux of cross flow type was 1.4 times higher than that of the dead end flow type. Nitrogen back flushing which is the removing method of membrane fouling was superior to the water sweeping. With nitrogen back flushing, the decrease of permeation flux due to the fouling was recovered about 85 % to the initial flux in the flat plate membrane system. The rejection rate of Si particles was about 90 % and the size of Si particle in the permeate was about 70 nm.

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Performance of Modified-Silicon Carbide Fiber Composites Membrane for Polymer Exchange Membrane Fuel Cells (표면처리된 실리콘 카바이드 섬유 복합막의 고분자 전해질 막 연료전지 성능)

  • Park, Jeong Ho;Kim, Taeeon;Juon, Some;Cho, Yongil;Cho, Kwangyeon;Shul, Yonggun
    • Transactions of the Korean hydrogen and new energy society
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    • v.25 no.1
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    • pp.28-38
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    • 2014
  • The organic-inorganic composite membrane in polymer exchange membrane fuel cells (PEMFCs) have several fascinating technological advantages such as a proton conductivity, thermal stability and mechanical properties. As the inorganic filler, silicon carbide (SiC) fiber have been used in various fields due to its unique properties such as thermal stability, conductivity, and tensile strength. In this study, composite membrane was successfully fabricated by modified-silicon carbide fiber. Modified process, as a novel process in SiC, takes reaction by phosphoric acid after oxidation process (generated homogeniusly $SiO_2$ layer on SiC fiber). The mechanical property which was conducted by tensile test of the 5wt% modified-$SiO_2@SiCf$ composite membrane was better than that of Aquivion casting membrane as well as ion cxchange capacity(IEC) and proton conductivity. In addition, the single cell performance was observed that the 5wt% modified-$SiO_2@SiCf$ composite membrane was approximately $0.2A/cm^2$ higher than that of a Aquivion casting electrolyte membrane and electrochemical impedance was improved with the charge transfer resistance and membrane resistance.

Construction of Membrane Sieves Using Stoichiometric and Stress-Reduced $Si_3N_4/SiO_2/Si_3N_4$ Multilayer Films and Their Applications in Blood Plasma Separation

  • Lee, Dae-Sik;Choi, Yo-Han;Han, Yong-Duk;Yoon, Hyun-C.;Shoji, Shuichi;Jung, Mun-Youn
    • ETRI Journal
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    • v.34 no.2
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    • pp.226-234
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    • 2012
  • The novelty of this study resides in the fabrication of stoichiometric and stress-reduced $Si_3N_4/SiO_2/Si_3N_4$ triple-layer membrane sieves. The membrane sieves were designed to be very flat and thin, mechanically stress-reduced, and stable in their electrical and chemical properties. All insulating materials are deposited stoichiometrically by a low-pressure chemical vapor deposition system. The membranes with a thickness of 0.4 ${\mu}m$ have pores with a diameter of about 1 ${\mu}m$. The device is fabricated on a 6" silicon wafer with the semiconductor processes. We utilized the membrane sieves for plasma separations from human whole blood. To enhance the separation ability of blood plasma, an agarose gel matrix was attached to the membrane sieves. We could separate about 1 ${\mu}L$ of blood plasma from 5 ${\mu}L$ of human whole blood. Our device can be used in the cell-based biosensors or analysis systems in analytical chemistry.

${\beta}-Ag_3SI$ Single Crystal Membrane Electrode (${\beta}-Ag_3SI$ 단결정막 전극에 관한 연구)

  • Sin Doo-Soon;Seon-Cheon Lee
    • Journal of the Korean Chemical Society
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    • v.28 no.2
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    • pp.86-94
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    • 1984
  • The single crystal ion-selective electrode,$ {\beta}-Ag_3SI/PVC-THF $membrane electrode has showed a linear potential response to the activities of iodide ion (10-1${\sim}$10-7M). The $ {\beta}-Ag_3SI$ membrane electrode was compared with AgI/PVC-THF membrane and copper metal plate membrane electrodes. In order to measure the selectivity coefficient of the electrodes toward $Cl^-$ and $Br^-$, the separation and mixed solution method were employed. The potential-time curve was obtained by the usual immersion technique and pH effect was also examined. The orders of selectivity for $Br^-$, $Cl^-$ and stability of response time are ${\beta}-Ag_3SI/PVC-THF $membrane > AgI/PVC-THF membrane > copper metal plate membrane. These electrodes could be used as indicating electrodes in the potentiometric titration of a single halide and mixed halides with the standard solution of silver nitrate.

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Fabrication of a mask for X-ray lithography Using SiN membrane and WTi Absorber (SiN 멤브레인과 WTi 흡수체를 이용한 X-선 노광용 마스크 제작)

  • 이문석;김오현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.115-121
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    • 1995
  • A mask for x-ray lithography is fabricated with SiN membrane and WTi absorber. SiN membrane is deposited by plasma enhanced chemical vapor deposition, and the stress of SiN membrane is controlled to be less than 100 MPa by rapid thermal annealing. WTi absorber is reactively deposited by DC-magnetron type sputter, and the working gases are argon and nitrogen. Added nitrogen is contributed to the stress of WTi absorber. The stress of WTi absorber is controlled to be less than $\pm$ 100 MPa by controlling the deposition pressure. 10$\mu$m WTi pattern is delineated on SiN membrane by dry etching technique.

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Separation of $H_2$/$N_2$ Gas Mixture by SiO$_2$-B$_2$O$_3$ Membrane (SiO$_2$-B$_2$O$_3$ 막에 의한 수소/질소 혼합기체 분리)

  • Kang Tae-Bum;Park Jin-Ho
    • Membrane Journal
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    • v.14 no.4
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    • pp.312-319
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    • 2004
  • The porous SiO$_2$-B$_2$O$_3$ membrane was prepared from Si(OC$_2$$H_5$)$_4$-($CH_3$O)$_3$B-C$_2$$H_5$OH-$H_2O$ system by sol-gel method. In order to investigate the characteristics of this membrane, we examined that using BET, IR spectrophotometer, X-ray diffractometer, SEM and TEM. At $700^{\circ}C$, the surface area of SiO$_2$-B$_2$O$_3$ membrane was 354.398 $m^2$/, the median pore diameter was 0.0048 ${\mu}{\textrm}{m}$, and the particle size of SiO$_2$-B$_2$O$_3$ membrane was 7 nm. The separation properties of the gas mixture ($H_2$/$N_2$) through the SiO$_2$-B$_2$O$_3$ membrane was studied as a function of pressure. The real separation factor($\alpha$) of SiO$_2$-B$_2$O$_3$ membrane for $H_2$/$N_2$ gas mixture was 4.68 at 155.15 cmHg and $25^{\circ}C$. The real separation factor($\alpha$), head separation factor($\beta$) and tail separation factor((equation omitted)) were increased as the pressure of permeation cell increased.

Development of the SiO2/Nano Ionomer Composite Membrane for the Application of High Temperature PEMFC (전기방사를 이용한 SiO2/nano ionomer 복합 막의 제조 및 고온 PEMFC에의 응용)

  • Na, Hee-Soo;Hwang, Hyung-Kwon;Lee, Chan-Min;Shul, Yong-Gun
    • Transactions of the Korean hydrogen and new energy society
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    • v.22 no.5
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    • pp.569-578
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    • 2011
  • The $SiO_2$ membranes for polymer electrolyte membrane fuel cell (PEMFC) are preapared by electrospinning method. It leads to high porosity and surface area of membrane to accommodate the proton conducting materials. The composite membrane was prepared by impregnating of Nafion ionomer into the pores of electrospun $SiO_2$ membranes. The $SiO_2$:heteropolyacid (HPA) nano-particles as a inorganic proton conductor were prepared by microemulsion process and the particles are added to the Nafion ionomer. The characterization of the membranes was confirmed by field emission scanning electron microscope (FE-SEM), thermogravimetry analysis (TGA), and single cell performance test for PEMFC. The Nafion impregnated electrospun $SiO_2$ membrane showed good thermal stability, satisfactory mechanical properties and high proton conductivity. The addition of the $SiO_2$:HPA nano-particle improved proton conductivity of the composite membrane, which allow further extension for operation temperature in low humidity environments. The composite membrane exhibited a promising properties for the application in high temperature PEMFC.

Improved Responsivity of an a-Si-based Micro-bolometer Focal Plane Array with a SiNx Membrane Layer

  • Joontaek, Jung;Minsik, Kim;Chae-Hwan, Kim;Tae Hyun, Kim;Sang Hyun, Park;Kwanghee, Kim;Hui Jae, Cho;Youngju, Kim;Hee Yeoun, Kim;Jae Sub, Oh
    • Journal of Sensor Science and Technology
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    • v.31 no.6
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    • pp.366-370
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    • 2022
  • A 12 ㎛ pixel-sized 360 × 240 microbolometer focal plane array (MBFPA) was fabricated using a complementary metaloxide-semiconductor (CMOS)-compatible process. To release the MBFPA membrane, an amorphous carbon layer (ACL) processed at a low temperature (<400 ℃) was deposited as a sacrificial layer. The thermal time constant of the MBFPA was improved by using serpentine legs and controlling the thickness of the SiNx layers at 110, 130, and 150 nm on the membrane, with response times of 6.13, 6.28, and 7.48 msec, respectively. Boron-doped amorphous Si (a-Si), which exhibits a high-temperature coefficient of resistance (TCR) and CMOS compatibility, was deposited on top of the membrane as an IR absorption layer to provide heat energy transformation. The structural stability of the thin SiNx membrane and serpentine legs was observed using field-emission scanning electron microscopy (FE-SEM). The fabrication yield was evaluated by measuring the resistance of a representative pixel in the array, which was in the range of 0.8-1.2 Mohm (as designed). The yields for SiNx thicknesses of SiNx at 110, 130, and 150 nm were 75, 86, and 86%, respectively.

The Characteristic Analysis of Thin Film Sensor using The Membrane (Membrane을 이용한 박막센서 특성 분석)

  • 이순우;김상훈;안진호
    • Journal of the Microelectronics and Packaging Society
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    • v.9 no.3
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    • pp.37-41
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    • 2002
  • In this research, we investigate the properties of membrane and thin film sensor which is using magnetic resonance properties. we expect to $Si_xN_y$ and SiC materials as membrane materials, we measured thin film stress and properties to find the best membrane fabrication condition. Of the two membrane, $Si_xN_y$ thin film is the better than SiC thin film. because of an adequate tensile stress and lower thermal expansion coefficient as sensor structure layer. After performing deposition and patterning thin film sensor material on $Si_xN_y$, we analyzed the magnetic hysteresis and magnetic resonance frequency of sensor. If the magnetic field which is applied in sensor material is removed, magnetization made by magnetic field is transited to elastic mode. moreover. energy radiation is induced during the transition and voltage generates in sensor by energy radiation. At this moment, If voltage generation period is longer, mechanical vibration is induced and signal is generated by mechanical vibration. we also see that as the increase of thin film sensor' length and width, magnetic resonance frequency is decreased.

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