• Journal of the Korean Society for Precision Engineering
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• v.26 no.9
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• pp.58-63
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• 2009

Silicon carbide (SiC) has been used for many engineering applications because of their high strength at high temperatures and high resistances to chemical degradation. SiC is very useful especially for a glass lens mold whose components demanded to the machining with good surface finish and low surface damage. The performance and reliability of optical components are strongly influenced by the surface damage of SiC during grinding process. Therefore, the severe process condition optimization shall be necessary for the highly qualified SiC glass lens mold. Usually the major form of damage in grinding of SiC is a crack occurs at surface and subsurface. The energy introduced in the layers close to the surface leads to the formation of these cracks. The experimental studies have been carried out to get optimum conditions for grinding of silicon carbide. To get the required qualified surface finish in grinding of SiC, the selection of type of the wheel is also important. Grinding processes of sintered SiC work-pieces is carried out with varying wheel type, depth of cut and feed using diamond wheel. The machining result of the surface roughness and the number of flaws, have been analyzed by use of surface profilers and SEM.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.90-94
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• 2012

This study has been focused on properties of mirror surface grinding technology by ELID(Electrolytic In-process Dressing) for metal matrix ceramic composites using in high precision mirror for optics. The experimental studies have been carried out to get mirror surface by grinding for composites, Al-SiC, Al-graphite and Mg-SiC. Grinding process is carried out with varying abrasive mesh type, depth of cut and feed rate using diamond wheel. The machining result of the surface roughness and condition of ground surface, have been analyzed by use of surface roughness tester and SEM measurement system. ELID grinding technology could be applied successfully for the mirror-surface manufacturing processes in spite of ductility of metal matrix material. As the results of experiments, surface roughness of Al-SiC(45 wt%) has been the most superior in these experimental work-pieces as 0.021 ${\mu}m$ Ra.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2001.10a
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• pp.355-359
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• 2001

In this study, experiments were carried out to investigate the characteristics of grinding and wear process of diamond wheel grinding ceramic materials. Normal component of grinding resistance of $AI_2O_3$ was less then that of $Si_3N_4$ and $ZrO_2$. It is because the resistance for grain shedding is less then that for layer formation. For the case of $Si_3N_4$ and $ZrO_2$, as the grain mesh number of wheel increases, the surface roughness decreases. For the case of $AI_2O_3$, the surface roughness does not decreases. For the case of $Si_3N_4$ and $ZrO_2$, grinding is carried out by abrasive wear processes. For the case of $AI_2O_3$, grinding is carried out by grain shedding process.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.12 no.5
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• pp.8-14
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• 2003

The characteristics of grinding and wear behavior of diamond wheel for grinding ceramic materials was investigated in this study. In case of $Si_3N_4$, the wear of wheel was large, the finding force was relatively stable and the fluctuation of surface roughness n small. On the other hand in case of $Al_2O_3$ and $ZrO_2$, the wear of wheel and surface roughness were decreasing, the grinding force was increasing. During grinding with vitrified bond wheel, $Si_3N_4$ shows renewal of cutting edge while $Al_2O_3$ and $ZrO_2$ show glazing phenomenon of cutting grains. We have found that it possible to observe the behavior of grinding wheel by grinding ratio, grinding resistance, surface roughness and cutting edge ratio. Through the grinding experiments, it was found that grinding life of diamond wheel is 20 times for $Si_3N_4$, and 40 times fir $Al_2O_3$ and $ZrO_2$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.5
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• pp.40-46
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• 2017

A plasma gas control apparatus for semiconductor plasma etching processes securely holds a cathode for forming a plasma, confines the plasma during the plasma etching process, and discharges gas after etching. It is a key part of the etching process. With the advancement of semiconductor technology, there is increasing interest in parts for semiconductor manufacturing that directly affect wafers. Accordingly, in order to replace the plasma gas control device with a CVD-SiC material superior in mechanical properties to existing SiCs (Sintered-SiC, RB-SiC), a study on the grinding characteristics of CVD-SiC was carried out. It is confirmed that the optimal grinding condition was obtained when the result table feed rate was 2 m/min and the infeed depth was $5{\mu}m$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.870-873
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• 2000

This investigation reports the grinding characteristics of quartz. Grinding experiments were performed at various grinding conditions including wheel mesh, table speed and depth of cut. The grinding forces and specific grinding energies were measured to compare the grindability of quartz with those of structural ceramics such as A1$_2$O$_3$, SiC, Si$_3$N$_4$ and ZrO$_2$. Surface roughness was also measured with tracer and the ground surfaces were observed with SEM. The chip formation energy of quartz was about 6J/㎣, which is quite smaller than those of structural ceramics. Although plastic flows are occured in Si$_3$N$_4$ and ZrO$_2$, micro/macro cracks are occured in ground surface of quartz like in A1$_2$O$_3$ and SiC.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.11 no.5
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• pp.58-64
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• 2002

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some finding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametrical silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpieces are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipment with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6 nm in Ra.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.946-949
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• 2001

Mirror surface finish of Si-wafers has been achieved by rotary in-feed machining with cup-type wheels in ELID grinding. But the diameter of the workpiece is limited with the diameter of the grinding wheel in the in-feed machining method. In this study, some grinding experiments by the rotary surface grinding machine with straight type wheels were conducted, by which the possible grinding area of the workpiece is independent of the diameter of the wheels. For the purpose of investigating the grinding characteristics of large scale diametral silicon wafer, grinding conditions such as rotation speed of grinding wheels and revolution of workpiece are varied, and grinding machine used in this experiment is rotary type surface grinding m/c equipped with an ELID unit. The surface ground using the SD8000 wheels showed that mirror like surface roughness can be attained near 2~6nm in Ra.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2002.04a
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• pp.43-47
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• 2002

In this study, through the experimental results of grinding ratio, grinding force and surface roughness with the obtained wear amount of diamond wheel and ceramic material during the grinding process, the following conclusions could be found. In the case of $Si_3N_4$, the wear of diamond wheel is large while the grinding force is stable and the range of change in surface roughness is small. for the case of $AL_2O_3$ and $ZrO_3$, while the wear of diamond wheel is getting smaller, the grinding force is increasing but the value of surface roughness is decreasing. For grinding with the vitrified bond wheel, it seems that the self-sharpening can be found for $Si_3N_4$ and the glazing effect of the cutting edge for $AL_2O_3$ and $ZrO_3$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.17 no.1
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• pp.16-22
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• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.