• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.17-20
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• 2001

Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectrics were fabricated, and nitrogen distribution and bonding species which contribute to memory characteristics were analyzed. Also, memory characteristics of devices depending on the anneal temperatures were investigated. The devices were fabricated by retrograde twin well CMOS processes with $0.35{\mu}m$ Nonvolatile semiconductor memory devices with reoxidized nitrided oxide(RONO) gate dielectric were fabricated, and nitrogen distribution and bonding species which contributing memory characteristics were analyzed. Also, memory characteristics of devices according to anneal temperatures were investigated. The devices were fabricated by $0.35{\mu}m$ retrograde twin well CMOS processes. The processes could be simple by in-situ process of nitridation anneal and reoxidation. The nitrogen distribution and bonding state of gate dielectric were investigated by Dynamic Secondary Ion Mass Spectrometry(D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry(ToF-SIMS), and X-ray Photoelectron Spectroscopy(XPS). Nitrogen concentrations are proportional to nitridation anneal temperatures and the more time was required to form the same reoxidized layer thickness. ToF-SIMS results show that SiON species are detected at the initial oxide interface and $Si_{2}NO$ species near the new $Si-SiO_{2}$ interface that formed after reoxidation. As the anneal temperatures increased, the device showed worse retention and degradation properties. These could be said that nitrogen concentration near initial interface is limited to a certain quantity, so excess nitrogen are redistributed near the $Si-SiO_{2}$ interface and contributed to electron trap generation.

• The Journal of Korean Physical Therapy
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• v.24 no.2
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• pp.73-81
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• 2012

Purpose: The aim of the present study was to measure the standing balance symmetry of stroke patients using a force-plate with computer system, and to investigate the correlation between the standing balance symmetry and that of the walking function in stroke patients. Methods: 48 patients with stroke (34 men, 14 women, $56.8{\pm}11.72$ years old) participated in this study. Static standing balance was evaluated by the weight distribution on the affected and the nonaffected lower limbs, sway path, sway velocity, and sway frequency, which reflected the characteristic of body sway in quiet standing. Dynamic standing balance was evaluated by anteroposterior and mediolateral sway angle, which revealed the limit of stability during voluntary weight displacement. Symmetry index of static standing balance, (SI-SSB) calculated by the ratio of the affected weight distribution for the nonaffected weight distribution, and symmetric index of dynamic standing balance (SI-SDB) by the ratio of the affected sway angle for the nonaffected sway angle. Functional balance assessed by a Berg balance scale (BBS), and the functional walking by 10m walking velocity, as well as the modified motor assessment scale (mMAS). Results: Static balance scales and SI-SSB was the only correlation with BBS (p<0.05). Dynamic balance scales and SI-DSB, not only was correlated with BBS, but also with 10m walking velocity and mMAS (p<0.01). Additionally, there was a significant difference between SI-SSB and that of SI-DSB (p<0.01). Conclusion: The balance and the walking function relate to real life in the stroke showed strong relationships with the dynamic standing balance symmetry in the frontal plane and the ability of anterior voluntary weight displacement in sagittal plane.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.522-527
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• 2019

In order to fabricate high-quality SiC substrates for power electronic devices, various single crystal growing methods were prepared. These include the physical vapor transport (PVT) and top seeded solution growth (TSSG) methods. All the suggested SiC growth methods generally use induction-heating furnaces. The temperature distribution in this system can be easily adjusted by changing the hot-zone design. Moreover, precise temperature control in the induction-heating furnace is favorably required to grow a high-quality crystal. Therefore, in this study, we analyzed the heat transfer in these furnaces to grow SiC crystals. As the growth temperature of SiC crystals is very high, we evaluated the effect of radiation heat transfer on the temperature distribution in induction-heating furnaces. Based on our simulation results, a heat transfer strategy that controls the radiation heat transfer was suggested to obtain the optimal temperature distribution in the PVT and TSSG methods.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.328-334
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• 2001

The characteristics of $NO/N_2O$ nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in $NO/N_2O$ ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with $N_2O$ than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as $Si_2NO$ chemical bonds, and it is agreed with the distribution of SiN and $Si_2NO$ species by ToF-SIMS.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.4
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.

• Journal of the Korean Ceramic Society
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• v.36 no.8
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• pp.853-858
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• 1999

To investigate the effect of H2 flow rate and TMS[Si(CH3)4] concentration on synthesizing ultrafine ${\beta}$-SiC powder by vapor phase reaction the experiment was performed at 1100$^{\circ}C$ of the reaction temperature under the condition of 200-2000 cc/min of H2 gas flow rate and 1-10% of TMS concentration respectively. The shape of ${\beta}$-SiC particles synthesized was spherical and the size of particles decreased and the distribution of particles was more uniform with increasing H2 gas flow rate. In this case Si powders were coexisted with ${\beta}$-SiC Pure and ultrafine ${\beta}$-SiC powders without Si were obtained under the condition of above 2% of TMS concentration and below 1500 cc/min of H2 gas flow rate.

• The Journal of Advanced Prosthodontics
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• v.8 no.4
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• pp.304-312
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• 2016

PURPOSE. The aim of this study was to investigate the stress distribution of 2-short implants (2SIs) installed in a severely atrophic maxillary molar site. MATERIALS AND METHODS. Three different diameters of internal connection implants were modeled: narrow platform (NP), regular platform (RP), and wide platform (WP). The maxillary first molars were restored with one implant or two short implants. Three 2SI models (NP-oblique, NP-vertical, and NP-horizontal) and four single implant models (RP and WP in a centered or cantilevered position) were used. Axial and oblique loadings were applied on the occlusal surface of the crown. The von Mises stress values were measured at the bone-implant, peri-implant bone, and implant/abutment complex. RESULTS. The highest stress distribution at the bone-implant interface and the peri-implant bone was noticed in the RP group, and the lowest stress distribution was observed in the 2SI groups. Cantilevered position showed unfavorable stress distribution with axial loading. 2SI types did not affect the stress distribution in oblique loading. The number and installation positions of the implant, rather than the bone level, influenced the stress distribution of 2SIs. The implant/abutment complex of WP presented the highest stress concentration while that of 2SIs showed the lowest stress concentration. CONCLUSION. 2SIs may be useful for achieving stable stress distribution on the surrounding bone and implant-abutment complex in the atrophic posterior maxilla.

• Applied Microscopy
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• v.44 no.2
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• pp.74-78
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• 2014

Dislocation density and distribution in epitaxial GaAs layer on Si are evaluated quantitatively and effectively using image processing of transmission electron microscopy image. In order to evaluate dislocation density and distribution, three methods are introduced based on line-intercept, line-length measurement and our coding with line-scanning method. Our coding method based on line-scanning is used to detect the dislocations line-by-line effectively by sweeping a thin line with the width of one pixel. The proposed method has advances in the evaluation of dislocation density and distribution. Dislocations can be detected automatically and continuously by a sweeping line in the code. Variation of dislocation density in epitaxial GaAs films can be precisely analyzed along the growth direction on the film.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.6
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• pp.199-209
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• 2000

Particles reinforced MMCs have higher specific modulus, higher specific strength, better properties at elevated temperatures and better wear resistance than monolithic metals. But the coefficient of thermal expansion(CTE) of Al6061 is 5 times larger than that of SiCp. The discrepancy of CTE makes some residual stresses inside of MMCs. This work investigates Si$C_p$/Al6061 composites at high temperatures in the microscopic view by three-dimensional elasto-plastic finite element analyses and compares the analytical results with the experimental ones. The theoretical model is not able to consider the nonuniform shape of particle. So the shape of particle is assumed to be perfect global shape. And also particle distribution is not homogeneous in experimental specimen. It is assumed to be homogeneous in simulation model. The type of particle distribution is face-centered cubic array(FCC array). Furthermore, non-homogeneous distribution is modeled by combination of several volume fractions.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.12-18
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• 1999

Alumina matrix composites reinforced with up to 20vol% of aligned SiC whiskers were fabricated by tape casting and hot pressing. Alumina composited with randomly distribution SiC whiskers were also fabricated in order to investigate the effect of whisker alignment on properties of the composites. XRD and optical microscopy were used to examine the whisker orientation. The fracture toughness increased with increasing whisker content, and it was higher in the direction normal to the tape casting direction.