• 제목/요약/키워드: Si distribution

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반고상 온도구역에서 등온유지한 Al-Si, Al-Cu 및 Mg-Al합금의 고상형상 및 조직의 변화 (Variation of Morphology of Solid Particles and Microstructure in Al-Si, Al-Cu and Mg-Al Alloys During Isothermal Heat-Treatment at Semi-Solid Temperatures)

  • 정운재;김기태;홍준표
    • 한국주조공학회지
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    • 제16권6호
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    • pp.556-564
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    • 1996
  • Variation of shape and size of solid particles and solute redistribution in Mg-9wt.%Al, AI-4.5wt.% Cu, and AI-7wt.%Si alloys were investigated when they were heated to semi-solid temperatures and held without stirring. In the case of Mg-9wt.% Al and Al-4.5wt.%Cu alloys, the polygonal shaped solid particles were agglomerated with non-uniform distribution, and there were no disappearance of the solid/solid boundary until the end of melting. But in the case of an Al-7wt.%Si alloys, two or three spherical shaped particles were coalesced or separated individually, and the coalesced particles had no solid/solid interface on the contrary to the prevous case. The maximum size of solid particles during isothermal heating at high temperature was smaller than that at lower temperature, but the time required to reach the maximum size at high temperature was shorter than that at lower temperature. The concentrations of main solute atom whose distribution coefficient is lower than 1, decreased in the primary solid particles as the liquid fraction increased, and the gradient of solute concentration was steeper in Mg-9wt.%Al alloy and Al-4.5wt.%Cu alloy than that of Al-7wt.%Si alloy.

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HBr Formation from the Reaction between Gas-phase Bromine Atom and Vibrationally Excited Chemisorbed Hydrogen Atoms on a Si(001)-(2 X1) Surface

  • Ree, J.;Yoon, S.H.;Park, K.G.;Kim, Y.H.
    • Bulletin of the Korean Chemical Society
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    • 제25권8호
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    • pp.1217-1224
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    • 2004
  • We have calculated the probability of HBr formation and energy disposal of the reaction exothermicity in HBr produced from the reaction of gas-phase bromine with highly covered chemisorbed hydrogen atoms on a Si (001)-(2 ${\times}$1) surface. The reaction probability is about 0.20 at gas temperature 1500 K and surface temperature 300 K. Raising the initial vibrational state of the adsorbate(H)-surface(Si) bond from the ground to v = 1, 2 and 3 states causes the vibrational, translational and rotational energies of the product HBr to increase equally. However, the vibrational and translational motions of product HBr share most of the reaction energy. Vibrational population of the HBr molecules produced from the ground state adsorbate-surface bond ($v_{HSi}$ =0) follows the Boltzmann distribution, but it deviates seriously from the Boltzmann distribution when the initial vibrational energy of the adsorbate-surface bond increases. When the vibration of the adsorbate-surface bond is in the ground state, the amount of energy dissipated into the surface is negative, while it becomes positive as vHSi increases. The energy distributions among the various modes weakly depends on surface temperature in the range of 0-600 K, regardless of the initial vibrational state of H(ad)-Si(s) bond.

Al-1%Si/SiO2/PSG 적층 박막에서 potassium 게터링에 관한 연구 (A Study on the Potassium Gettering in Al-1%Si/SiO2/PSG Multilevel Thin Films)

  • 김진영
    • 한국표면공학회지
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    • 제48권5호
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    • pp.233-237
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    • 2015
  • In order to investigate the potassium (K) gettering, Al-1%Si/$SiO_2$/PSG multilevel thin films were fabricated. Al-1%Si thin films and $SiO_2$/PSG passivations were deposited by using DC magnetron sputter techniques and APCVD (atmosphere pressure chemical vapor deposition), respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of K, Al, Si, P, and other elements throughout the $SiO_2$/PSG passivated Al-1%Si thin film interconnections. Potassium peaks were observed throughout the $SiO_2$/PSG passivation layers, and especially the interface gettering at the $SiO_2$/PSG and at the Al-1%Si/$SiO_2$ interfaces was observed. Potassium gettering in Al-1%Si/$SiO_2$/PSG multilevel thin films is considered to be caused by a segregation type of gettering.

Al-Mg-Si합금의 고온 소성 변형 거동 (Plastic Deformation Behavior Of Al-Mg-Si Alloy At The Elevated Temperature)

  • 권용남;이영선;이정환
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2003년도 추계학술대회논문집
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    • pp.172-175
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    • 2003
  • Thermomechanical behavior of Al-Mg-Si alloys have been studied to investigate the effect of microstructural features such as pre-existing substructure and distribution of particles on the deformation characteristics. The controlled compression tests have been carried out to get the basic information on how the alloy responds to temperature, strain amount and strain rate. Then hot forging of Al-Mg-Si alloys has been carried out and analyzed by the comparison with the compression tests. Microstructural features after forging have been discussed in terms of the thermomechanical response of Al-Mg-Si alloys. As already well mentioned, we have found that the deformation of Al-Mg-Si at the elevated temperature brought the recovered structure on most conditions. In a certain time, however, abnormally large grains have been found as a result of deformation assisted grain growth, which means that hot forging of Al-Mg-Si alloys could lead to a undesirable microstructural variation and the consequent mechanical properties such as fatigue strength.

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Al-1%Si 박막 금속화의 신뢰도 향상을 위한 연구 (A Study for the Increased Reliability of Al-1%Si Thin Film Metallizations)

  • 최재승;김진영
    • 한국진공학회지
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    • 제1권3호
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    • pp.382-388
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    • 1992
  • Electromigration은 인가된 전계하에서 발생하는 전자풍력에 의한 금속 이온의 현 상이며, 반도체 디바이스의 주요 결함 원인으로 보고되어 왔다. 선폭 1$mu extrm{m}$의 Al-1%Si 금속 박막전도체에 대한 electromigration 수명 실험을 위해 인가된 d.c. 전류밀도는 10MA/cm2 이었고, electromigration에 대한 활성화 에너지 측정을 위한 분위기 온도는 $80^{\circ}C$, 10$0^{\circ}C$ 그리고 $120^{\circ}C$이었다. 평균수명 및 신뢰성에 대한 보호 절연막 효과를 위해 두께 3000 $\AA$의 SiO2 산화막을 sputtering 진공증착기를 사용하여 Al-1%Si 금속 박막 전도체 위에 증착하였 다. 주요 연구 결과는 다음과 같다. Al-1%Si 금속 박막 전도체의 electromigration에 대한 활성화 에너지값은 0.75eV이었고 온도가 증가함에 따라 Al-1%Si의 수명은 감소하였고 신 뢰성은 향상되었다. SiO2 보호막은 electromigration에 대한 저항성을 크게 함으로써 평균수 명을 향상시켰으며, electromigration failure는 lognormal failure distribution은 갖는 것으로 나타났다.

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용융산화법으로 제조한 $Al_2O_3-SiC$ 세라믹스의 미세구조와 기계적 성질 (Microstructure and Mechanical Properties of the $Al_2O_3-SiC$ Ceramics Produced by Melt Oxidation)

  • 김일수
    • 한국세라믹학회지
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    • 제31권10호
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    • pp.1169-1175
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    • 1994
  • Five Al2O3/SiC/metal composites with four different particle sizes of green SiC abrasive grains are grown by the directed oxidation of an commercially available Al-alloy. Oxidation was conducted in air at 100$0^{\circ}C$, 96 hours long. Slip casted SiC-fillers were placed on the alloy or SiC powder deposited up to the required layer thickness. Their microstructures are described and measurements of density, elastic constants, frexural strength, fracture toughness and work of fracture are reported. The results are compared with those of commercial dense sintered Al2O3. The properties of produced materials have a strong relationship to not only the properties of Al2O3, SiC, Al and Si but also to the phase share and phase distribution. The composite materials are dense (0.5% porosity), tough (KIC = 3.4~6.4 MPa{{{{ SQRT { m} }}), strong ({{{{ sigma }}B = 170~345 MPa) and reasonably shrinkage free producible. The reinforcements is attained mainly through the plastic deformation of ductile metal phase.

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무가압 분말 충전 성형법에 의해 제조된 Si-SiC 복합체에 관한 연구 (A Study on the Si-SiC Composites Fabricated by Pressureless Powder Packing Forming Method)

  • 박정현;임은택;성재석;최헌진;이준석
    • 한국세라믹학회지
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    • 제32권6호
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    • pp.710-718
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    • 1995
  • The new forming method, Pressureless Powder Packing Forming Method was applied to the manufacturing of reaction sintered SiC. After the experiments of vibratory powder packing and binder infiltration, the abrasive SiC powder of which mean size is 45${\mu}{\textrm}{m}$ was selected to this forming method. Uniform green bodies with porosity of 45% and narrow pore size distribution could be formed by this new forming method. Also, complex or varied cross-sectional shapes could be easily manufactured through the silicone rubber mould used in this forming method. Maximum 15 wt% amorphous carbon was penetrated into green body by multi impregnation-carbonization cycles. And reaction-bonded SiC was manufactured by infiltration of SiC-carbon shaped bodies with liquid silicon.

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Al-Mg-Si 합금의 고온 소성 변형 거동 (Plastic Deformation Behavior of Al-Mg-Si Alloys at the Elevated Temperatures)

  • 권용남;이영선;이정환
    • 소성∙가공
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    • 제13권1호
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    • pp.27-32
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    • 2004
  • Thermomechanical behavior of Al-Mg-Si alloys was studied to investigate the effect of microstructural features such as pre-existing substructure and distribution of particles on the deformation characteristics. The controlled compression tests were carried out to get the information on how the alloy responds to temperature, strain amount and strain rate. Then hot forging of Al-Mg-Si alloys carried out and analyzed by the comparison with the compression tests. Microstructural features after forging were discussed in terms of the thermomechanical response of Al-Mg-Si alloys. As already well mentioned, we found that the deformation of Al-Mg-Si at the elevated temperature brought the recovered structure on most conditions. In a certain time, however, abnormally large grains were found as a result of deformation assisted grain growth, which means that hot forging of Al-Mg-Si alloys could lead to a undesirable microstructural variation and the consequent mechanical properties such as fatigue strength.

RF-PECVD법에 의한 Ti-Si-N 박막의 증착거동 (Deposition Behaviors of Ti-Si-N Thin Films by RF Plasma-Enhanced Chemical Vapor Deposition.)

  • 이응안;이윤복;김광호
    • 한국표면공학회지
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    • 제35권4호
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    • pp.211-217
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    • 2002
  • Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.