• Title/Summary/Keyword: Si content

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Study of hydrogenated a-SiGe cell for middle cell of Triple junction solar cell (Triple junction 태양전지의 a-SiGe middle cell에 관한 연구)

  • Park, Taejin;Baek, Seungjo;Kim, Beomjoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.83.1-83.1
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    • 2010
  • Hydrogenated a-SiGe middle cell for triple junction solar cell was investigated with various process parameters. a-SiGe I-layer was deposited at substrate temperature $245^{\circ}C$ and hydrogen content(R) was up to 26.7. Low optical bandgap(1.45eV) of a-SiGe cell was applied for middle cell although a-SiGe single cell efficiency with low Ge content was higher. And this cell was applied to the middle cell of a glass superstrate type a-Si/a-SiGe/uc-Si triple junction solar cell. The triple junction solar cell was resulted in the initial efficiency of about 9%, area $0.25cm^2$, under global AM 1.5 illumination.

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Properties of $CaO-P_2O_5-SiO_2$ Glasses ($CaO-P_2O_5-SiO_2$계 유리의 물성)

  • 조정식;김철영
    • Journal of the Korean Ceramic Society
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    • v.30 no.4
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    • pp.289-298
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    • 1993
  • Properties in terms of the variation of the glass compositions, which were density (p), molar volume(Vm), atom/ion packing density (Dp), refractive index (nD), transformation temperature (Tg), dilatometric softening point (Td), thermal expansion coefficient (α), Young's modulus (E), and knoop hardness (KHN) were investigated in CaO-SiO2 glasses and CaO-P2O5-SiO2 glasses containing less than 10mole% of P2O5. Those properties were measured by density measurement kit, Abbe refractometer, dilatometer, ultrasonic pulse echo equipment, and micro hardness tester. When CaO content was increased in CaO-SiO2 glasses, p, Dp, nD, Tg, Td, α, E and KHN were increased, while Vm was decreased. When P2O5 was added to the CaO-SiO2 glasses with constant CaO/SiO2 ratio as 1.07, p, Dp, nD, Tg, Td, α, E and KHN were decreased, while Vm was increased. When the amount of P2O5 in glasses was kept constant, the changes of the properties with variation of CaO content in the CaO-P2O5-SiO2 glasses were very similar to those of CaO-SiO2 glasses. These phenomena could be explained by the structural role of P2O5 in the CaO-P2O5-SiO2 glasses, which was polymerization of siicate structures and resulted in [PO4] monomer structure in glasses. Due to this structural characteristics, the bond strength and packing density were changed with compositions. Proportional relationships between 1) np and Dp, 2) Tg, Td, α and CaO content, 3) E and Vm-1, and 4) KHN and P2O5 content were evaluated in this investigation.

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Effect of(Si+C) Content on the Strength of SiC-(Si+C) Sintered Bodies (SiC-(Si+C) 소결체의 강도에 미치는 (Si+C)첨가량의 영향)

  • 김은태;김완덕;최진영;우정인
    • Journal of the Korean Ceramic Society
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    • v.23 no.3
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    • pp.9-14
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    • 1986
  • $\beta$-SiC bonded SiC bodies were prepared from various conditions such as several compositions of(Si+C)/$\alpha$ -SiC ratio and different firing schedules and were respectively investigated compressive strength MOR and mi-crostructure. One firing schedule which produced the specimens that had $\beta$-SiC neck form with the highest strength was selected and experimented by each firing temperature. results obtained are as follows : 1) The amount of (Si+C) for th highest MOR of SiC-(Si+C) sintered body is 20wt% 2) By adding 20wt% content of (Si+C) and heating up to 1, 500 with soaking 3hrs respectively at 1,150$^{\circ}C$ 1,250$^{\circ}C$ 1,350$^{\circ}C$ and 1,400$^{\circ}C$ the highest MOR of fired specimen was resulted and its microstructure of ma-trix was composed of close $\beta$-SiC neck. 3) Microstructure of $\beta$-SiC were different greatly from each other by firing time and/or quantity of adding mix-ture and it was confirmed that they were composed of neck particle-like and heterogeneous texture. 4)$\beta$-SiC synthesis proceed rapidly at the temperature between 1,250$^{\circ}C$ and 1,350$^{\circ}C$ 5) All of the properties of 85 SiC-20(Si+C) specimen improved according to increasing temperature above 1,350$^{\circ}C$.

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Electrical and Optical Properties of SiO2-doped ZnO Films Prepared by Rf-magnetron Sputtering System (Rf-magnetron Sputtering 장치에 의해 제작된 SiO2가 도핑된 ZnO 박막의 전기적 및 광학적 특성)

  • Bae, Kang;Sohn, Sun-Young;Hong, Jae-Suk;Kim, Hwa-Min
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.11
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    • pp.969-973
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    • 2009
  • In this study, the electrical and optical properties of $(SiO_2)_x(ZnO)_{100-x}$ (SZO) films prepared on the coming 7059 glass substrates by using rf-magnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates of the SZO film with $SiO_2$ content of 3 wt.% is $4\;{\AA}/s$. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap were decreased from 3.52 to 3.33 eV as an increase the deposition thickness. X-ray diffraction patterns showed that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO film with the $SiO_2$ contents of 2 wt.% showed the resistivity of about $3.8{\times}10^{-3}\;{\Omega}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

Formation of Solid Solution and Microstructure in Processureless sintered SiC-AlN Composite (상압소결에 의하여 제조된 SiC-AlN 복합체에서의 고용체 형성과 미세구조)

  • Lee, Jong-Kook;Kim, Duk-Jun;Kim, Hwan
    • Journal of the Korean Ceramic Society
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    • v.33 no.7
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    • pp.785-792
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    • 1996
  • Formation of Solid Solution and Microstructure in Processureless sintered SiC-AlN compo-site using oxides as a sintering aid at 185$0^{\circ}C$ and 195$0^{\circ}C$ Regardless of SiC/AlN ratio in composition most of sintered specimens showed he complex structure mixed with 2H solid solution and SiC particles. High sintering temperature and large AlN content in starting composition enhanced the formation of 2H solid solution in sintered specimen 2H solid solution showed the spherical shape and core-rim structure. AlN content in the core is higher than that in the rim but SiC content . The size of 2H solid solution on fracture showed the transgranular fracture mode compared with the dispersed SiC particles which showed the intergranular fracture mode.

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Microstructure and Mechanical Properties of (SiC)p/Al Composite Fabricated by a Powder-in Sheath Rolling Method (분말피복압연법에 의해 제조된 (SiC)p/Al 복합재료의 미세조직 및 기계적 성질)

  • 이성희;이충효
    • Journal of Powder Materials
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    • v.11 no.3
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    • pp.259-264
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    • 2004
  • Aluminum based metal matrix composite reinforced with SiC particles was fabricated by the powder-in sheath rolling method. A stainless steel tube with outer diameter of 12 mm and wall thickness of 1mm was used as a sheath. Mixture of aluminum powder and SiC particles of which volume content was varied from 5 to 20vol.% was filled in the tube by tap filling and then rolled to 75% reduction at ambient temperature. The rolled specimen was sintered at 56$0^{\circ}C$ for 0.5hr. The tensile strength of the (SiC)$_{p}$/Al composite increased with the volume content of SiC particles, and at 20vol.% it reached a maximum of 100㎫ which is 1.6 times higher than unreinforced material. The elongation decreased with the volume content of $Al_{2}$O$_{3}$ particles. The mechanical properties of the (SiC)$_{p}$/Al composite fabricated by the powder-in sheath rolling is compared with that of (Al$_{2}$O$_{3}$)$_{p}$/Al composite by the same process.ess.

Enhanced Crystallization Behaviour and Microwave Dielectric Properties of 0.9CaMgSi2O6-0.1MgSiO3 Glass-Ceramics Doped with TiO2

  • Jo, Hyun Jin;Sun, Gui Nam;Kim, Eung Soo
    • Journal of the Korean Ceramic Society
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    • v.53 no.2
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    • pp.139-144
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    • 2016
  • The dependence of the microwave dielectric properties of the glass-ceramic composite $0.9CaMgSi_2O_6-0.1MgSiO_3$ on the crystallization behaviour was investigated as functions of the $TiO_2$ content and heat-treatment temperature. The crystallization behaviour of the specimens was evaluated via a combination of the Rietveld and reference-intensity ratio methods. For specimens with a $TiO_2$ content of up to 1 wt.%, a monoclinic diopside phase was formed, whereas a secondary $TiO_2$ phase was formed with further increases in the $TiO_2$ content. The quality factor (Qf) of the specimens was strongly dependent on the degree of crystallization. The highest Qf value was obtained with a $TiO_2$ content of 0.5 wt.%, which was improved by increasing the heat-treatment temperature. The dielectric constant (K) was affected by the size of the crystallites and the $TiO_2$ content. The temperature coefficient of the resonant frequency (TCF) was nearly constant for all of the specimens, regardless of the $TiO_2$ content or heattreatment temperature.

Toxicity evaluation based on particle size, contact angle and zeta potential of SiO2 and Al2O3 on the growth of green algae

  • Karunakaran, Gopalu;Suriyaprabha, Rangaraj;Rajendran, Venkatachalam;Kannan, Narayanasamy
    • Advances in nano research
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    • v.3 no.4
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    • pp.243-255
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    • 2015
  • In this investigation, ecotoxicity of nano and micro metal oxides, namely silica ($SiO_2$) and alumina ($Al_2O_3$), on the growth of green algae (Porphyridium aerugineum Geitler) is discussed. Effects of nano and micro particles on the growth, chlorophyll content and protein content of algae are analysed using standard protocols. Results indicate that $SiO_2$ nano and micro $SiO_2$ particles are non-toxic to P. aerugineum Geitler up to a concentration of 1000 mg/L. In addition, $Al_2O_3$ microparticles are less toxic to P. aerugineum Geitler, whereas $Al_2O_3$ nanoparticles are found to be highly toxic at 1000 mg/L. Moreover, $Al_2O_3$ nanoparticles decrease the growth, chlorophyll content, and protein content of tested algae. In addition, zeta potential and contact angle are also important in enhancing the toxicity of metal oxide nanoparticles in aquatic environment. This study highlights a new insight into toxicity evaluation of nanoparticles on beneficial aquatic organisms such as algae.

Preparation and Mechanical Properties of 3Y-TZP/SiC Composites (3-TZP/SiC 복합체의 제조 및 기계적 성질)

  • 이홍림;이형민
    • Journal of the Korean Ceramic Society
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    • v.29 no.11
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    • pp.877-887
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    • 1992
  • Tetragonal zirconia powder with 3 mol% Y2O3 mas mixed with up to 30 vol% of ${\beta}$-SiC powders, and the mixtures were hot-pressed at 1500$^{\circ}C$ for 60 min under a pressure of 30 MPa in Ar atmosphere. Flexural strength and fracture toughness were measured at room-and high-temperature (1000$^{\circ}C$). Evolution of microstructure was also conducted to investigate the effects of SiC addition on the properties of 3Y-TZP ceramics. Average grain size of the composites was about 0.5 $\mu\textrm{m}$, and decreased with SiC addition. Both room- and high-temperature mechanical properties of the composites were improved with SiC content. Particularly, high-temperature strength and fracture toughness of 3Y-TZP/30v/o SiC composite were twice as high as those of 3Y-TZP. The hardness of the composites also increased with SiC content and reached maximum value at 3Y-TZP/30v/o SiC composite.

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Change of Secondary Dendrite Arm Spacing of Hypoeutectic Al-Si Alloys according to Si Content and Cooling Rate (아공정 Al-Si 합금에서 Si 함량과 냉각속도에 따른 제이차수지상간격의 변화)

  • Park, Kyeong-Seob;Kim, Hee-Soo
    • Journal of Korea Foundry Society
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    • v.37 no.4
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    • pp.108-114
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    • 2017
  • In this study, we investigated the effect of the Si content on the secondary dendrite arm spacing (SDAS) of hypoeutectic Al-Si binary alloys in the range of 4~10 wt% Si. Cooling curves were measured during the solidification of the alloy cast in a step-wise mold. We compared two kinds of solidification time: the first is the total solidification time for both dendritic and eutectic growth, and the second is the solidification time for only dendritic growth. The proportional constant in the relationship between SDAS and cooling rate was estimated, as this constant represents the stability of the cast microstructure. The proportional constant decreased with the Si contents from 4 wt% to 8 wt%, and it remains relatively uniform with up to 10 wt% of Si.