• Journal of the Semiconductor & Display Technology
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• v.23 no.3
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• pp.29-34
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• 2024

We investigated the n-type δ-doping activation of the tunneling junctions of Si nanolayers for silicon tandem cell applications. The thin film growth of pn junction with the inclusion of phosphorus monolayer was performed by plasma-enhanced chemical vapor deposition with the implement on 6-inch wafers of p-Si microtextured substrates. The rapid thermal annealing processes with various temperatures were performed to activate the δ-doped layer. The activation was confirmed by the electron spin resonance with Lande factor g=2.006085 for the delocalized conduction electron from the phosphorus δ-doped layer at the magnetic field of 3357.5 Gauss. The tunneling junction shows the Ohmic character at the low voltage and the Schottky character at the high voltage bias.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.170-171
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• 2002

최근에 스핀트로닉스 주요 관심 소자의 하나인 자성체와 반도체 하이브리드형 쇼트키 장벽 다이오드 (Schottky Barrier Diode; SBD) 소자는 금속과 반도체간의 장벽전압에 의해 다수 전자가 이동하는 현상을 이용한 것으로서 과거에 신호 검파용으로 사용하던 금속 접촉 다이오드와 유사한 구조와 원리를 가진다. 내부 저항이 작고 동작속도가 빨라서 PC의 전원 장치와 같이 고속, 고효율을 요구하는 환경에 많이 사용된다. 쇼트키 장벽 소신호 다이오드와 쇼트키 장벽 정류기의 구분은 불분명하며 보통 0.5 A를 기준으로 구분한다. (중략)

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.175-177
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• 2002

Electrical characteristics of the Si-O superlattice diode as a function of annealing conditions have been studied. The nanocrystalline silicon/adsorbed oxygen superlattice formed by molecular beam epitaxy (MBE) system. Consequently, the experimental results of superlattice diode with multilayer Si-O structure showed the stable and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic and quantum device as well as for the replacement of silicon-on-insulator (SOI) in ultra high speed and lower power CMOS devices in the future, and it can be readily integrated with silicon ULSI processing.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.1-10
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• 1996

Solar cells made of the edge-defined film-fed growth Si are characterized using current-voltage, surface photovoltage, electron beam induced current, electron microprobe, scanning electron microscopy, and electron backscattering. The weak temperature dependence of the I-V curves in the EFG solar cells is due to a voltage variable shunt resistance giving higher diode ideality factors than the ideal one. The voltage variable shunt resistance is modeled by a modified recombination mechanism which includes carrier tunneling to distributed impurity energy states in the band gap within the space-charge region. The junction integrity and the substrate quality are characterized simultaneously by combining I-V and surface photovoltage (SPV) measurements. The diode ideality factors and the surface photovoltages characterize the junction integrity while the SPV diffusion lengths characterizes the substrate quality. Most of the measured samples show the voltage variable shunt resistance although how serious it is depends on the solar cell efficiency. The voltage variable shunt resistance is understood as one of the most important factors of the degradation of EFG solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.12
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.