• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.20-25
• /
• 2010

An integrated Mach-Zehnder interferometric sensor operating at 632.8 nm was designed and fabricated by the technology of planar rib waveguides. Rib waveguide based on silica system ($SiO_2-SiO_xN_y-SiO_2$) was geometrically designed to have single mode operation and high sensitivity. It was structured by semiconductor fabrication processes such as thin film deposition, photolithography, and RIE (Reactive Ion Etching). With the power observation, propagation loss measurement by cut-back method showed about 4.82 dB/cm for rib waveguides. Additionally the chromium mask process for an etch stop was employed to solve the core damaging problem in patterning the sensing zone on the chip. Refractive index measurement of water/ethanol mixture with this device finally showed a sensitivity of about $\pi$/($4.04{\times}10^{-3}$).

• Journal of Sensor Science and Technology
• /
• v.5 no.4
• /
• pp.25-34
• /
• 1996

A SOx sensor using NASICON electrolyte was developed for monitoring of air pollution. The following galvanic cell with $Na_{2}SiO_{3}(Pt)$ reference electrode was assembled : Pt | $Na_{2}SiO_{3}$ | NASICON | $Na_{2}SO_{4}$ | Pt, $SO_{2}$, air $Na_{2}SO_{4}$ was used as an indicator electrode to protect NASICON electrolytes from chemical reaction with $SO_{2}$. The EMFs were measured after injecting $SO_{2}$ in the initial concentrations range of $5{\sim}95ppm$ at $400{\sim}550^{\circ}C$. The measured and calculated potentials were in good agreement above $500^{\circ}C$. However, the cells were unstable below $500^{\circ}C$, most likely due to incomplete attainment of chemical equilibrium. Response time was within 10 min. Based on the stability and response time of this cell, the NASICON solid electrolyte with $Na_{2}SiO_{3}(Pt)$ as the reference electrode and $Na_{2}SO_{4}$ (Pt)as the indicator electrode showed the possibility of a reliable, inexpensive commercial solid-state SOx sensor.

• Journal of the Korean Electrochemical Society
• /
• v.1 no.1
• /
• pp.40-44
• /
• 1998

The LAPS device of fast response and high sensitivity, based on electrochemical potential difference, and its system were fabricated for the precise measurement of pH changes and its characteristic were investigated. The electrostatic variation characteristics of LAPS according to the pH changes and parameters in the device were verified through a simulation using LAPS equivalent circuit model. The LAPS device and its system were fabricated on the basis of the result of simulation. The fabricated LAPS system showed linear sensitivity (about 56 mV/pH within the range of pH 2 to pH 11. In order to overcome the defect of general urea sensor (especially slow response time), urease immobilized nitrocellulose membrane was attached on the LAPS and resulted in the very fast response time, 0.29 mV/sec, 0.86 mV/sec at urea concentration of $50{\mu}g/ml,\; 500{\mu}g/ml$, respectively. And also in order to measure the uranyl ion, the uranyl ion selective sensing membrane with calix[6]arene derivative was used and its sensitivity was 25mV/concentration decade in the wide uranyl ion concentration range of $10^{-11}M\;to\;10^{-4}M$.

• Journal of Sensor Science and Technology
• /
• v.19 no.5
• /
• pp.337-341
• /
• 2010

In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.354.1-354.1
• /
• 2016

Nanoporous gold (NPG) is a very promising material in various fields such as sensor, actuator, and catalysis because of its high surface to volume ratio and conducting nature. In this study, we fabricated a NPG based amperometric sensor on a glass substrate by means of co-sputtering of Au and Si. During the sputtering process, we found the optimum conditions for heat treatment to reduce the residual stress and to improve adhesion between NPG films and the glass substrate. Subsequently, Si was selectively etched from Au-Si alloy by KOH solution, which forms nanoporous structures. Scanning electron microscopy (SEM) and auger electron spectroscopy (AES) were used to estimate the structure of NPG films and their composition. By employing appropriate heat treatments, we could make very stable NPG films. We tested the performance of NPG sensor with aniline molecules, which shows high sensitivity for sensing low concentration of aniline.

• Journal of Sensor Science and Technology
• /
• v.23 no.6
• /
• pp.392-396
• /
• 2014

The 2-dimensional silicon vertical Hall devices, which are sensitive to X,Y components of the magnetic field parallel to the surface of the chip, are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$ interface and n-epi layer to improve the sensitivity and influence of interface effect. Experimental samples are a sensor type K with and type J without $p^+$ isolation dam adjacent to the center current electrode. The results for both type show a more high sensitivity than the former's 2-dimensional vertical Hall devices and a good linearity. The measured non-linearity is about 0.8%. The sensitivity of type J and type K are about 66 V/AT and 200 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.28A no.11
• /
• pp.894-901
• /
• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.356-361
• /
• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• Proceedings of the KIEE Conference
• /
• 1994.07b
• /
• pp.1226-1228
• /
• 1994

Applications of poly-Si layers which are important as sensing and structural material of various sensors were reviewed in this research. A piezoresistive pressure sensor with piezoresistors has sensitivity of $6.93{\mu}$ V/(VmmHg) within 300mmHg. Temperature sensor was studied with measurement range of $-40{\sim}140^{\circ}C$ and $400{\sim}800^{\circ}C$ using boron-doped and undoped poly-Si resistors, respectively. Poly-Si layer was used to transduce volume change of polyimide to stress of silicon diaphragm for humidity sensor.

• Journal of Sensor Science and Technology
• /
• v.20 no.4
• /
• pp.260-265
• /
• 2011

The silicon vertical hall devices are fabricated using a modified bipolar process. It consists of the thin p-layer at Si-$SiO_2$, interface and n-epi layer without $n^+$buried layer to improve the sensitivity and influence of interface effects. Experimental samples are a sensor type I with and type H without p+isolation dam adjacent to the center current electrode. The experimental results for both type show a more high current-related sensitivity than the former's vertical hall devices. The sensitivity of type H and type I are about 150 V/AT and 340 V/AT, respectively. This sensor's behavior can be explained by the similar J-FET model.