• 한국세라믹학회지
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• 제50권1호
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• pp.31-36
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• 2013

${\beta}$-SiC powders were synthesized by a carbothermal reduction process using $SiO_2$-C precursors fabricated by a sol-gel process using phenol resin and TEOS as starting materials for carbon and Si sources, respectively. The C/Si molar ratio was selected as an important parameter for synthesizing SiC powders using a sol-gel process, and the effects of the C/Si molar ratio (1.4-3.0) on the particle size, particle size distribution, and yield of the synthesized ${\beta}$-SiC powders were investigated. It was found that (1) the particle size of the synthesized ${\beta}$-SiC powders decreased with an increase in the C/Si molar ratio in the $SiO_2$-C hybrid precursors, (2) the particle size distribution widened with an increase in the C/Si molar ratio, and (3) the yield of the ${\beta}$-SiC powder production increased with an increase in the C/Si molar ratio.

• 한국주조공학회지
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• 제22권5호
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• pp.257-264
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• 2002

Effects of Ca content on the refinement of primary Si of Aluminum B390 alloy have been examined. Ca was found to have an effect on the refinement of primary Si particle. Primary Si particle size has been refined as Ca content of the melts decreased and cooling rate increased. A control of Ca content by the addition of $CuCl_2$ to the melt was the most efficient in the refinement of primary Si particles. The minimum size of primary Si particles in this study was $15.0\;{\mu}m$ when a residual content of Ca element in the alloy was 5ppm, Primary Si particle size was refined as primary Si crystallization temperature increased, which was attributed to the decrease of Ca content in the melts.

• Korean Chemical Engineering Research
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• 제58권1호
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• pp.84-91
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• 2020

염기성 폴리올 및 식용유 정제에 사용하는 합성 규산마그네슘의 효율성은 정제능력과 여과속도를 통해 평가되며, 규산마그네슘의 입도 및 표면적에 따라 영향을 받는다. 본 연구에서는 합성변수인 반응온도, 주입속도, 주입순서(Si, Mg), Mg/Si의 반응몰비가 규산마그네슘의 입도에 미치는 영향을 조사하였다. 합성된 규산마그네슘은 합성공정, 분쇄공정, 정제공정으로 비교 분석되었다. 합성공정에서 반응 온도와 주입 속도는 규산마그네슘의 평균입도 변화에 영향을 주지않는 반면, Mg/Si의 반응몰비와 주입 순서는 평균입도 변화에 주된 요인으로 작용하였다. 합성 후 규산마그네슘의 평균입도는 반응몰비가 0.125에서 0.500로 증가할 때 Mg 주입 시 약 54.4 ㎛에서 63.1 ㎛로 약 8.7 ㎛ 증가하였고, Si 주입 시 47.3 ㎛에서 52.1 ㎛로 약 4.8 ㎛ 증가하였다. 주입 순서 별 평균입도를 비교해보면 Mg 주입 시 59.1 ㎛, Si 주입 시 48.4 ㎛로 약 10.7 ㎛의 평균입도 차이를 보였으며 Mg을 주입하는 조건에서 약 2배 빠른 수세여과속도가 관찰되었다. 즉, 입도가 증가함에 따라 여과 시간이 단축되고 수세여과속도 증가로 생산성 향상에 기여할 수 있었다. 여과 후 분리된 cake형태의 규산마그네슘은 건조과정을 통해 단단한 고형체가 되고 분쇄공정을 통해 분말형태의 흡착제로 사용된다. 건조된 규산마그네슘의 물리적 강도가 감소함에 따라 분말의 평균입도가 감소하고, 이 강도는 반응몰비에 영향을 받는 것을 확인하였다. Mg주입 시 Mg/Si의 반응몰비가 증가함에 따라 규산마그네슘의 물리적 강도가 감소하여 분쇄 후 평균입도가 합성 후 평균입도에 비해 약 40% 감소하는 것을 관찰하였다. 이러한 강도감소는 평균입도 감소와 분쇄 후 미분량의 증가로 정제능력의 향상을 가져왔지만 정제여과속도 감소를 가져왔다. Mg 주입 시 반응몰비가 0.125에서 0.5로 증가할 동안 정제능력은 약 1.3 배가 증가하였으나 정제여과속도는 약 1.5 배가 감소하였다. 따라서 규산마그네슘의 생산성 향상을 위해서는 Mg/Si의 반응몰비를 증가시켜야 하지만, 폴리올의 정제여과속도를 증가시키기 위해선 반응몰비를 감소시켜야 한다. 규산마그네슘의 합성변수 중 주입순서와 Mg/Si의 반응몰비는 합성 후 평균입도와 분쇄 후 평균입도 및 미분량 변화에 영향을 주는 주요인자로 생산성 및 정제능력을 결정짓는 중요한 합성변수이다.

• Bulletin of the Korean Chemical Society
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• 제35권5호
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• pp.1523-1528
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• 2014

Silicon quantum dots (Si QDs) were synthesized by etching silicon nanopowder with aqueous hydrofluoric acid (HF) and nitric acid ($HNO_3$). Then, the hydride-terminated Si QDs (H-Si QDs) were functionalized by 1- octadecene (ODE). By only controlling the etching time, the maximum luminescence peak of octadecylterminated Si QDs (ODE-Si QDs) was tuned from 404 nm to 507 nm. The average optical gap was increased from 2.60 eV (ODE-Si QDs-5 min) for 5 min of etching to 3.20 eV (ODE-Si QDs-15 min) for 15 min of etching, and to 3.40 eV (ODE-Si QDs-30 min) for 30 min of etching. The electron affinities (EA), ionization potentials (IP), and quasi-particle gap (${\varepsilon}^{qp}_{gap}$) of the Si QDs were determined by cyclic voltammetry (CV). The quasi-particle gaps obtained from the CV were in good agreement with the average optical gap values from UV-vis absorption. In the case of the ODE-Si QDs-30 min sample, the difference between the quasi-particle gap and the average optical gap gives the electron-hole Coulombic interaction energy. The additional electronic levels of the ODE-Si QDs-30 min and ODE-Si QDs-15 min samples determined by the CV results are interpreted to have originated from the Si=O bond terminating Si QD.

• Bulletin of the Korean Chemical Society
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• 제32권1호
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• pp.145-148
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• 2011

The thermal behavior of lithiated Si anodes has been investigated using differential scanning calorimetry (DSC). In particular, the effect of Si particle size on the thermal stability of a fully lithiated Si electrode was investigated. For DSC measurements, a lithiated Si anode was heated in a hermetically sealed high-pressure pan with a polyvinylidene fluoride (PVDF) binder and a 1 M $LiPF_6$ solution in an ethylene carbonate (EC)-diethyl carbonate (DEC) mixture. The thermal evolution around $140^{\circ}C$ increases with lithiation and with decreasing particle size; this phenomenon is attributed to the thermal decomposition of the solid electrolyte interface (SEI) film. Exothermic peaks, following a broad peak at around $140^{\circ}C$, shift to a lower temperature with a decrease in particle size, indicating that the thermal stability of the lithiated Si electrode strongly depends on the Si particle size.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2003년도 춘계학술발표대회 논문집
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• pp.46-49
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• 2003

Aluminum based metal matrix composites(MMCs) are well known for their high specific strength, stiffness and hardness. They are gaining further importance because of their high wear resistance. In this study, Al/Saffil-20%, Al/Saffil-5%/Al2O3(particle type)-15% and Al/Saffil-5%/SiC(particle type)-15% hybird MMCs' wear behavior were characterized by the pin-on-disk test under various normal load The superior wear resistance was exhibited at Al/Saffil-5%/SiC(particle type)-15% MMCs. And this MMCs' predominant wear mechanism is subsurface cracking in the low load wear regime. Others(Al/Saffil-20%, Al/Saffil-5%/Al2O3(particle type)-15%) showed the similar wear resistance with each other at the same test condition. In the low load & room temperature condition, the wear resistance was improved due to the high hardness of the ceramic reinforcements. As the test load increased, the wear properties were governed by the wear properties of matrix.

• 한국재료학회지
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• 제25권5호
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• pp.258-263
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• 2015

To fabricate porous SiC-Si composites for heating element applications, both SiC powders and Si powders were mixed and sintered together. The properties of the sintered SiC-Si body were investigated as a function of SiC particle size and/or Si particle contents from 10 wt% to 40 wt%, respectively. Porous SiC-Si composites were fabricated by Si bonded reaction at a sintering temperature of $1650^{\circ}C$ for 80 min. The microstructure and phase analysis of SiC-Si composites that depend on Si particle contents were characterized using scanning electron microscope and X-ray diffraction. The electrical resistivity of SiC-Si composites was also evaluated using a 4-point probe resistivity method. The electrical resistivity of the sintered SiC-Si body sharply decreased as the amount of Si addition increased. We found that the electrical resistivity of porous SiC-Si composites is closely related to the amount of Si added and at least 20 wt% Si are needed in order to apply the SiCSi composites to the heating element.

• 한국결정성장학회지
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• 제27권1호
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• pp.57-63
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• 2017

High-purity ${\beta}-SiC$ powders for SiC single-crystal growth were synthesized by direct carbonization. The use of high-purity raw materials to improve the quality of a SiC single crystal is important. To grow SiC single crystals by the PVT method, both the particle size and the packing density of the SiC powder are crucial factors that determine the sublimation rate. In this study, we tried to produce high-purity ${\beta}-SiC$ powder with large particle sizes and containing low silicon by introducing a milling step during the direct carbonization process. Controlled heating improved the purity of the ${\beta}-SiC$ powders to more than 99 % and increased the particle size to as much as ${\sim}100{\mu}m$. The ${\beta}-SiC$ powders were characterized by SEM, XRD, PSA, and chemical analysis to assess their purity. Then, we conducted single-crystal growth experiments, and the grown 4H-SiC crystals showed high structural perfection with a FWHM of about 25-48 arcsec.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.61-64
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• 2010

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

• 한국세라믹학회지
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• 제32권11호
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• pp.1246-1254
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• 1995

A numerical model for fabrication and deposition of ultrafine SiO2 particles were proposed in the simplified horizontal MCVD apparatus using tube furnace reactor. The model equations such as energy and mass balance equations and the 0th, 1st and 2nd moment balance equations of aerosols were considered in the reactor. The phenomena of SiCl4 chemical reaction, SiO2 particle formation and coagulation, diffusion and thermophoresis of SiO2 particles were included in the aerosol dynamic equation. The profiles of gas temperature, SiCl4 concentration and SiO2 particle volume were calculated for standard conditions. The concentrations, sizes and deposition efficiencies of SiO2 particles were calculated, changing the process conditions such as tube furnace setting temperature, total gas flow rate and inlet SiCl4 concentration.