Transactions on Electrical and Electronic Materials

  • 제11권2호
  • /
  • Pages.61-64
  • /
  • 2010
  • /
  • 1229-7607(pISSN)
  • /
  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지
DOI QR코드

DOI QR Code

The Quality Investigation of 6H-SiC Crystals Grown by a Conventional PVT Method with Various SiC Powders

  • Yeo, Im-Gyu (Electronic Ceramic Center (ECC), Department of Nano Technology, Dong Eui University) ;
  • Lee, Tae-Woo (Electronic Ceramic Center (ECC), Department of Nano Technology, Dong Eui University) ;
  • Lee, Won-Jae (Electronic Ceramic Center (ECC), Department of Nano Technology, Dong Eui University) ;
  • Shin, Byoung-Chul (Electronic Ceramic Center (ECC), Department of Nano Technology, Dong Eui University) ;
  • Choi, Jung-Woo (Crysband co., Ltd.) ;
  • Ku, Kap-Ryeol (Crysband co., Ltd.) ;
  • Kim, Young-Hee (Korea Institute of Ceramics Engineering and Technology)
  • 발행 : 2010.04.25
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

In this paper, we investigate the quality difference of SiC crystals grown by a conventional physical vapor transport method using various SiC powders. While the growth rate was revealed to be dependent upon the particle size of the SiC powder, the growth rate of SiC bulk crystals grown using SiC powder with a smaller particle size (20 nm) was definitely higher than those using lager particle sizes with $0.1-0.2\;{\mu}m$ and $1-10\;{\mu}m$, respectively. All grown 2 inch SiC single crystals were proven to be the polytype of 6H-SiC and the carrier concentration levels of about $10^{17}\;cm^3$ were determined from Hall measurements. It was revealed that the particle size and process method of SiC powder played an important role in obtaining a good quality, high growth rate, and to reduce growth temperature.

키워드

참고문헌

  1. Y. M. Tairov and V. F. Tsvetkov, J. Crystal Growth 52, 146 (1981) [DOI: 10.1016/0022-0248(81)90184-6].
  2. Y. M. Tairov and V.F. Tsvetkov, J. Crystal Growth 43, 209 (1978) [DOI: 10.1016/0022-0248(78)90169-0].
  3. Y. Kitou, W. Bahng, T. Kato, S. Nishizawa, and K. Arai, Mater. Sci. Forum 389-393, 83 (2002) [DOI: 10.4028/www.scientific.net/MSF.389-393.83].
  4. V. Ramachandran, M. F. Brady, A. R. Smith, and R. M. Feenstra, D. W. Greve, J. Electron. Mat. 27, 308 (1998) [DOI: 10.1007/s11664-998-0406-7].
  5. S. Ota, T. Furusho, H. Takagi, S. Oshima, and S. Nishino, Mater. Sci. Forum 457-460, 115 (2004) [DOI: 10.4028/www.scientific.net/MSF.457-460.115].